关于Carbide编译出现perl脚本错误的解决方法

也是在另外一个博客中看到的,不过现在在网上竟然搜不到了,还好我记录了下来:

 

如果用Carbide编译任意工程,都出现类似如下的错误:
===Build Command = /c abld build WINSCW UDEB -v===
C:/WINDOWS/system32/cmd.exe /c abld build WINSCW UDEB -v
  make -r  -f "/Symbian/9.1/S60_3rd_MR/EPOC32/BUILD/Symbian/Carbide/workspace/TestListBox/group/EXPORT.make" EXPORT
Nothing to do
  make -r  -f "/Symbian/9.1/S60_3rd_MR/EPOC32/BUILD/Symbian/Carbide/workspace/TestListBox/group/WINSCW.make" MAKEFILE
Bareword found where operator expected at C:/Symbian/9.1/S60_3rd_MR/epoc32/tools/perllib/params.pm line 461, near "New CParamItem"
    (Do you need to predeclare New?)
Bareword found where operator expected at C:/Symbian/9.1/S60_3rd_MR/epoc32/tools/perllib/params.pm line 466, near "New CParamItem"
    (Do you need to predeclare New?)
syntax error at C:/Symbian/9.1/S60_3rd_MR/epoc32/tools/perllib/params.pm line 461, near "New CParamItem"
syntax error at C:/Symbian/9.1/S60_3rd_MR/epoc32/tools/perllib/params.pm line 466, near "New CParamItem"
Compilation failed in require at C:/Symbian/9.1/S60_3rd_MR/epoc32/tools/perllib/args.pm line 19.
BEGIN failed--compilation aborted at C:/Symbian/9.1/S60_3rd_MR/epoc32/tools/perllib/args.pm line 19.
Compilation failed in require at C:/Symbian/9.1/S60_3rd_MR/epoc32/tools/cshlpcmp.pl line 58.
BEGIN failed--compilation aborted at C:/Symbian/9.1/S60_3rd_MR/epoc32/tools/cshlpcmp.pl line 58.
make[1]: *** [MAKMAKE] Error 255
make: *** [MAKEFILEBUILD_HELP] Error 2

解决方法有两种:

1 安装Activeperl 5.6.1,高版本的Perl编译可能出现上面问题。

2 编辑文件
/devices/S60_3rd_FP2_SDK/epoc32/tools/perllib/params.pm
和文件
/devices/S60_3rd_FP2_SDK/epoc32/tools/perllib/args.pm
在它们开头的use语句后分别加入:
#加入到params.pm中
sub CParamItem::New;
sub CParamsEntry::New;

#加入到args.pm中
sub CArgsSpec::New;

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WIDE bandgap devices, such as silicon carbide (SiC) metal–oxide–semiconductor field-effect transis- tors (MOSFETs) present superior performance compared to their silicon counterparts [1]. Their lower ON-state resistance and faster switching capability attract lots of interest in high-power- density applications [2]. Faster switching speed enables lower switching loss and higher switching frequency, which is benefi- cial to high-efficiency and high power density. However, severe electromagnetic interference (EMI) and transient overvoltage issues caused by fast switching speed jeopardize the power quality and reliability of converters [3], [4]. Therefore, there is a tradeoff between efficiency and reliability in the choice of switching speed. An optimized design should ensure theoperation within both safe-operation-area and EMI limits, and switching loss should be as small as possible. A prediction method of switching performance is important and helpful for designer to evaluate and optimize converter design. The most concerned switching characteristics are switching loss, dv/dt, di/dt, and turn-ON/OFF overvoltage generally. These characteristics are crucial for the design of heatsink, filter, and gate driver. Related discussions have been presented in many existing research articles as following.请将这一段进行以下要求,Move analysis 语步(内容成分)分析; Language devices和实现该功能的语言手段(某些关键专有名词提供汉语翻译)
06-13

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