型号:SYKJ3N10
封装:SOT-23-3L
类型:N-MOS
耐压:100V
电流:2.5A
VGS:±20V
The SYKJ3N10.is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON .and efficiency formost of thesmall powerswitching and load switch applications.
The SYKJ3N10meet the RoHS and Green Product requirement with full function reliability approved.