STM32F1x和STM32F4x的Flash读写
1.理论：STM32f103的flash读写是基于 “页” STM32f407的flash读写是基于 “扇区”
flash读写原理转自:https://blog.csdn.net/lushoumin/article/details/87694389?ops_request_misc=%257B%2522request%255Fid%2522%253A%2522162297841016780261913587%2522%252C%2522scm%2522%253A%252220140713.130102334…%2522%257D&request_id=162297841016780261913587&biz_id=0&utm_medium=distribute.pc_search_result.none-task-blog-2allbaidu_landing_v2~default-2-87694389.first_rank_v2_pc_rank_v29&utm_term=STM32+flahs&spm=1018.2226.3001.4187
2代码:
##stm32f103flash 基于页
/*---------------------------------------flash.h---------------------------------------------*/
#ifndef __FLASH_H__
#define __FLASH_H__
#define STM32_FLASH_SIZE 512 //根据MCU所选FLASH容量大小(单位为K)
#define STM32_FLASH_BASE 0x08000000 //FLASH的起始地址
#define FLASH_SAVE_ADDR 0X0800C004 //存放起始地址，可自己改
#endif
/*---------------------------------------flash.c---------------------------------------------*/
#if STM32_FLASH_SIZE < 256
#define STM_SECTOR_SIZE 1024 //根据flash容量小于256K的每页大小是1k 1k = 1024B
#else
#define STM_SECTOR_SIZE 2048 //根据flash容量大于256K的每页大小是2k 2k = 2048B
#endif
u16 STMFLASH_BUF[STM_SECTOR_SIZE/2];//最多是2K字节
//读取指定地址的半字(16位数据)
//faddr:读地址(此地址必须为2的倍数!!)
//返回值:对应数据.
u16 STMFLASH_ReadHalfWord(u32 faddr)
{
return *(vu16*)faddr;
}
//从指定地址开始读出指定长度的数据
//ReadAddr:起始地址
//pBuffer:数据指针
//NumToWrite:半字(16位)数
void STMFLASH_Read(u32 ReadAddr,u16 *pBuffer,u16 NumToRead)
{
u16 i;
for(i=0;i<NumToRead;i++)
{
pBuffer[i]=STMFLASH_ReadHalfWord(ReadAddr);//读取2个字节.
ReadAddr+=2;//偏移2个字节.
}
}
//WriteAddr:起始地址
//pBuffer:数据指针
//NumToWrite:半字(16位)数
void STMFLASH_Write_NoCheck(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite)
{
u16 i;
for(i=0;i<NumToWrite;i++)
{
FLASH_ProgramHalfWord(WriteAddr,pBuffer[i]);
WriteAddr+=2;//地址增加2.
}
}
//从指定地址开始写入指定长度的数据
//WriteAddr:起始地址(此地址必须为2的倍数!!)
//pBuffer:数据指针
//NumToWrite:半字(16位)数(就是要写入的16位数据的个数.)
void STMFLASH_Write(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite)
{
u32 secpos; //第几页
u16 secoff; //页内偏移地址(16位字计算)
u16 secremain; //页内剩余地址(16位字计算)
u16 i;
u32 offaddr; //相对flash基地址0X08000000偏移了地址量
if( WriteAddr<STM32_FLASH_BASE || (WriteAddr>=(STM32_FLASH_BASE+1024*STM32_FLASH_SIZE)) )return;//非法地址
FLASH_Unlock(); //解锁
offaddr=WriteAddr-STM32_FLASH_BASE; //相对于flash基地址偏移了多少地址
secpos=offaddr / STM_SECTOR_SIZE; //求出所在的页如0，1，2，3..页
secoff=(offaddr % STM_SECTOR_SIZE)/2; //在该页内偏移地址 即是在第几个u16 数据上(2 是读取和写入的字节是u16)
secremain=STM_SECTOR_SIZE/2-secoff; //在该页内剩余的空间大小
if(NumToWrite<=secremain)secremain=NumToWrite;//写入的数据没超过当前页内剩余的空间
while(1)
{
STMFLASH_Read(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//读出整页
for(i=0;i<secremain;i++)//判断是否需要擦除
{
if(STMFLASH_BUF[secoff+i]!=0XFFFF)break;
}
if(i<secremain)//需要擦除
{
FLASH_ErasePage(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE);//擦除这个页
for(i=0;i<secremain;i++)//赋值
{
STMFLASH_BUF[i+secoff]=pBuffer[i];
}
STMFLASH_Write_NoCheck(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//写入整页
}
else//不需要擦除
{
STMFLASH_Write_NoCheck(WriteAddr,pBuffer,secremain);//直接写入页剩余区间.
}
if(NumToWrite==secremain)//没有跨页存入
{
break;//写入结束了，跳出循环
}
else//有跨页写入,增加新页
{
secpos++; //页地址增1
secoff=0; //页内偏移地址为0
pBuffer+=secremain; //指针偏移
WriteAddr+=secremain; //写地址偏移
NumToWrite-=secremain; //剩余要写入的字节(16位)数递减
if(NumToWrite>(STM_SECTOR_SIZE/2))
secremain=STM_SECTOR_SIZE/2;//新页还是写不完
else
secremain=NumToWrite;//新页可以写完了
}
}
FLASH_Lock();//上锁
}
/*---------------------------------------main.c---------------------------------------------*/
u16 flash1_rx_buff[100];//读取flash内容存放到该数组
u16 flash1_rx_len=10;
u16 flash1_tx_buff[100];//将该数组写入flash
u16 flash1_tx_len=10;
u8 flash2_rx_buff[100];//读取flash内容存放到该数组
u8 flash2_rx_len=10;
u8 flash2_tx_buff[100];//将该数组写入flash
u8 flash2_tx_len=10;
int main()
{
STMFLASH_Write(FLASH_SAVE_ADDR,flash1_tx_buff,flash1_tx_len);
STMFLASH_Read(FLASH_SAVE_ADDR, flash1_rx_buff,flash1_rx_len);
//如若要定义u8数组可
//STMFLASH_Write(FLASH_SAVE_ADDR,(u16*)flash2_tx_buff,len);//len= flash2_tx_len/2 + (flash2_tx_len%2)? 1 : 0
//STMFLASH_Read(FLASH_SAVE_ADDR, (u16*)flash2_rx_buff,len);//len= flash2_rx_len/2 + (flash2_rx_len%2)? 1 : 0
}
##stm32f407flash 基于扇区
/*---------------------------------------flash.h---------------------------------------------*/
#define STM32_FLASH_BASE 0x08000000 //FLASH的起始地址
#define FLASH_SAVE_ADDR 0X0800C004 //存放起始地址，可自己改
//FLASH 扇区的起始地址
#define ADDR_FLASH_SECTOR_0 ((u32)0x08000000) //扇区0起始地址, 16 Kbytes
#define ADDR_FLASH_SECTOR_1 ((u32)0x08004000) //扇区1起始地址, 16 Kbytes
#define ADDR_FLASH_SECTOR_2 ((u32)0x08008000) //扇区2起始地址, 16 Kbytes
#define ADDR_FLASH_SECTOR_3 ((u32)0x0800C000) //扇区3起始地址, 16 Kbytes
#define ADDR_FLASH_SECTOR_4 ((u32)0x08010000) //扇区4起始地址, 64 Kbytes
#define ADDR_FLASH_SECTOR_5 ((u32)0x08020000) //扇区5起始地址, 128 Kbytes
#define ADDR_FLASH_SECTOR_6 ((u32)0x08040000) //扇区6起始地址, 128 Kbytes
#define ADDR_FLASH_SECTOR_7 ((u32)0x08060000) //扇区7起始地址, 128 Kbytes
#define ADDR_FLASH_SECTOR_8 ((u32)0x08080000) //扇区8起始地址, 128 Kbytes
#define ADDR_FLASH_SECTOR_9 ((u32)0x080A0000) //扇区9起始地址, 128 Kbytes
#define ADDR_FLASH_SECTOR_10 ((u32)0x080C0000) //扇区10起始地址,128 Kbytes
#define ADDR_FLASH_SECTOR_11 ((u32)0x080E0000) //扇区11起始地址,128 Kbytes
/*---------------------------------------flash.c---------------------------------------------*/
//读取指定地址的半字(16位数据)
//faddr:读地址
//返回值:对应数据.
u32 STMFLASH_ReadWord(u32 faddr)
{
return *(vu32*)faddr;
}
//获取某个地址所在的flash扇区
//addr:flash地址
//返回值:0~11,即addr所在的扇区
uint16_t STMFLASH_GetFlashSector(u32 addr)
{
if(addr<ADDR_FLASH_SECTOR_1)return FLASH_Sector_0;
else if(addr<ADDR_FLASH_SECTOR_2)return FLASH_Sector_1;
else if(addr<ADDR_FLASH_SECTOR_3)return FLASH_Sector_2;
else if(addr<ADDR_FLASH_SECTOR_4)return FLASH_Sector_3;
else if(addr<ADDR_FLASH_SECTOR_5)return FLASH_Sector_4;
else if(addr<ADDR_FLASH_SECTOR_6)return FLASH_Sector_5;
else if(addr<ADDR_FLASH_SECTOR_7)return FLASH_Sector_6;
else if(addr<ADDR_FLASH_SECTOR_8)return FLASH_Sector_7;
else if(addr<ADDR_FLASH_SECTOR_9)return FLASH_Sector_8;
else if(addr<ADDR_FLASH_SECTOR_10)return FLASH_Sector_9;
else if(addr<ADDR_FLASH_SECTOR_11)return FLASH_Sector_10;
return FLASH_Sector_11;
}
//从指定地址开始写入指定长度的数据
//WriteAddr:起始地址(此地址必须为4的倍数!!)
//pBuffer:数据指针
//NumToWrite:字(32位)数(就是要写入的32位数据的个数.)
void STMFLASH_Write(u32 WriteAddr,u32 *pBuffer,u32 NumToWrite)
{
FLASH_Status status = FLASH_COMPLETE;
u32 addrx=0;
u32 endaddr=0;
if(WriteAddr<STM32_FLASH_BASE||WriteAddr%4)return; //非法地址
FLASH_Unlock(); //解锁
FLASH_DataCacheCmd(DISABLE);//FLASH擦除期间,必须禁止数据缓存
addrx=WriteAddr; //写入的起始地址
endaddr=WriteAddr+NumToWrite*4; //写入的结束地址
if(addrx<0X1FFF0000) //只有主存储区,才需要执行擦除操作!!
{
while(addrx<endaddr) //扫清一切障碍.(对非FFFFFFFF的地方,先擦除)
{
if(STMFLASH_ReadWord(addrx)!=0XFFFFFFFF)//有非0XFFFFFFFF的地方,要擦除这个扇区
{
status=FLASH_EraseSector(STMFLASH_GetFlashSector(addrx),VoltageRange_3);//VCC=2.7~3.6V之间!!
if(status!=FLASH_COMPLETE)break; //发生错误了
}else addrx+=4;
}
}
if(status==FLASH_COMPLETE)
{
while(WriteAddr<endaddr)//写数据
{
if(FLASH_ProgramWord(WriteAddr,*pBuffer)!=FLASH_COMPLETE)//写入数据
{
break; //写入异常
}
WriteAddr+=4;
pBuffer++;
}
}
FLASH_DataCacheCmd(ENABLE); //FLASH擦除结束,开启数据缓存
FLASH_Lock();//上锁
}
//从指定地址开始读出指定长度的数据
//ReadAddr:起始地址
//pBuffer:数据指针
//NumToRead:字(4位)数
void STMFLASH_Read(u32 ReadAddr,u32 *pBuffer,u32 NumToRead)
{
u32 i;
for(i=0;i<NumToRead;i++)
{
pBuffer[i]=STMFLASH_ReadWord(ReadAddr);//读取4个字节.
ReadAddr+=4;//偏移4个字节.
}
}
/*---------------------------------------main.c---------------------------------------------*/
u32 flash1_rx_buff[100];//读取flash内容存放到该数组
u32 flash1_rx_len=10;
u32 flash1_tx_buff[100];//将该数组写入flash
u32 flash1_tx_len=10;
u8 flash2_rx_buff[100];//读取flash内容存放到该数组
u8 flash2_rx_len=10;
u8 flash2_tx_buff[100];//将该数组写入flash
u8 flash2_tx_len=10;
int main()
{
STMFLASH_Write(FLASH_SAVE_ADDR,flash1_tx_buff,flash1_tx_len);
STMFLASH_Read(FLASH_SAVE_ADDR, flash1_rx_buff,flash1_rx_len);
//如若要定义u8数组可
//STMFLASH_Write(FLASH_SAVE_ADDR,(u32*)flash2_tx_buff,len);//len= flash2_tx_len/4 + (flash2_tx_len%4)? 1 : 0
//STMFLASH_Read(FLASH_SAVE_ADDR, (u32*)flash2_rx_buff,len);//len= flash2_rx_len/4 + (flash2_rx_len%4)? 1 : 0
}
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