前言
文章绝大多数公式推来自Robert F.Pierret所著书籍《Semiconductor Device Fundamentals》,主要对pn结的静电特性、I-V特性和小信号导纳部分的基本公式进行了推导和梳理。
一、pn结静电特性
1.1 泊松方程
∇ ⋅ E → = ρ K S ε 0 \nabla \cdot \overrightarrow{E}=\frac{\rho}{K_S\varepsilon _0} ∇⋅E=KSε0ρ求解一维问题时,上述方程简化为:
d E → d x = ρ K S ε 0 \frac{d\overrightarrow{E}}{dx}=\frac{\rho}{K_S\varepsilon _0} dxdE=KSε0ρ假设杂质全电离时,电荷密度 (电荷/cm3)可表示为:
ρ = q ( p − n + N D − N A ) \rho =q\left( p-n+N_D-N_A \right) ρ=q(p−n+ND−NA)1.2 内建电势
E = − d V d x E=-\frac{dV}{dx} E=−dxdV在耗尽区积分得到:
− ∫ − x p x n E d x = V ( x n ) − V ( − x p ) = V b i -\int_{-x_p}^{x_n}{Edx=V\left( x_n \right) -V\left( -x_p \right) =V_{bi}} −∫−xpxnEdx=V(xn)−V(−xp)=Vbi由于热平衡条件下,扩散电流和漂移电流之和为零,得:
J N = q μ n n E + q D N d n d x = 0 J_N=q\mu _nnE+qD_N\frac{dn}{dx}=0 JN=qμnnE+qDNdxdn=0整理上式并利用Einstein关系式进一步得到:
E = − D N μ n d n / d x n = − k T q d n / d x n E=-\frac{D_N}{\mu _n}\frac{dn/dx}{n}=-\frac{kT}{q}\frac{dn/dx}{n} E=−μnDNndn/dx=−qkTndn/dx带入上述积分表达式可得:
− ∫ − x p x n E d x = − ∫ − x p x n ( − k T q d n / d x n ) d x = k T q ∫ n ( − x p ) n ( x n ) 1 n d n = k T q ln ( n ( x n ) n ( − x p ) ) -\int_{-x_p}^{x_n}{Edx=}-\int_{-x_p}^{x_n}{\left( -\frac{kT}{q}\frac{dn/dx}{n} \right) dx=}\frac{kT}{q}\int_{n\left( -x_p \right)}^{n\left( x_n \right)}{\frac{1}{n}dn=\frac{kT}{q}\ln \left( \frac{n\left( x_n \right)}{n\left( -x_p \right)} \right)} −∫−xpxnEdx=−∫−xpxn(−qkTndn/dx)dx=qkT∫n(−xp)n(xn)n1dn=qkTln(n(−xp)n(xn))对于非简并掺杂突变结的特定情况:
n ( x n ) = N D n ( − x p ) = n i 2 N A n\left( x_n \right) =N_D \\ n\left( -x_p \right) =\frac{n_{i}^{2}}{N_A} n(xn)=NDn(−xp)=NAni2带入上式可得到:
V b i = k T q ln ( N A N D n i 2 ) V_{bi}=\frac{kT}{q}\ln \left( \frac{N_AN_D}{n_{i}^{2}} \right) Vbi=qkTln(ni2NAND)根据能带图进一步分析可得到:
V b i = V ( x n ) − V ( − x p ) = 1 q [ E c ( − x p ) − E c ( x n ) ] = 1 q [ E i ( − x p ) − E i ( x n ) ] V_{bi}=V\left( x_n \right) -V\left( -x_p \right) =\frac{1}{q}\left[ E_c\left( -x_p \right) -E_c\left( x_n \right) \right] =\frac{1}{q}\left[ E_i\left( -x_p \right) -E_i\left( x_n \right) \right] Vbi=V(xn)−V(−xp)=q1[Ec(−xp)−Ec(xn)]=q1[Ei(−xp)−Ei(xn)]非简并突变结在热平衡条件下:
( E i − E F ) p − s i d e = k T ln ( N A / n i ) ( E F − E i ) n − s i d e = k T ln ( N D / n i ) \left( E_{\begin{array}{c} i\\ \end{array}}-E_F \right) _{p-side}=kT\ln \left( N_A/n_i \right) \\ \left( E_{\begin{array}{c} F\\ \end{array}}-E_i \right) _{n-side}=kT\ln \left( N_D/n_i \right) (Ei−EF)p−side=kTln(NA/ni)(EF−Ei)n−side=kTln(ND/ni)1.3 VA=0条件下的突变结静电关系
耗尽层近似:冶金结附近区域的载流子浓度不计;耗尽区以外的电荷密度为零。
电场边界条件: x = − x p , x = x n x=-x_p,x=x_n x=−xp,x=xn及其以外区域的电场强度为0; N A x p = N D x n N_Ax_p=N_Dx_n NAxp=NDxn
静电电势边界条件: V ( − x p ) = 0 , V ( x n ) = V b i V\left( -x_p \right) =0,V\left( x_n \right) =V_{bi} V(−xp)=0,V(xn)=Vbi
电荷密度 :
ρ = { − q N A − x p < x < 0 q N D 0 < x < x n 0 x < − x p , x > x n \rho =\begin{cases} -qN_A\,\, -x_p<x<0\\ qN_D\,\, 0<x<x_n\\ 0 x<-x_p,x>x_n\\ \end{cases} ρ=⎩
⎨
⎧−qNA−xp<x<0qND0<x<xn0x<−xp,x>xn泊松方程:
d E d x = { − q N A / K S ε 0 − x p < x < 0 q N D / K S ε 0 0 < x < x n 0 x < − x p , x > x n \frac{dE}{dx}=\begin{cases} -qN_A/K_S\varepsilon _0\,\, -x_p<x<0\\ qN_D/K_S\varepsilon _0\,\, 0<x<x_n\\ 0 x<-x_p,x>x_n\\ \end{cases} dxdE=⎩
⎨
⎧−qNA/KSε0−xp<x<0qND/KSε00<x<xn0x<−xp,x>xn电场强度E:
E ( x ) = ∫ 0 E ( x ) d E = ∫ − x p x − q N A K S ε 0 d x = − q N A K S ε 0 ( x + x p ) − x p < x < 0 E ( x ) = − ∫ E ( x ) 0 d E = − ∫ x x n q N D K S ε 0 d x = − q N D K S ε 0 ( x n − x ) 0 < x < x n E\left( x \right) =\int_0^{E\left( x \right)}{dE}=\int_{-x_p}^x{\frac{-qN_A}{K_S\varepsilon _0}dx=-\frac{qN_A}{K_S\varepsilon _0}\left( x+x_p \right)}\,\, -x_p<x<0 \\ E\left( x \right) =-\int_{E\left( x \right)}^0{dE}=-\int_x^{x_n}{\frac{qN_D}{K_S\varepsilon _0}dx=-\frac{qN_D}{K_S\varepsilon _0}\left( x_n-x \right)}\,\, 0<x<x_n E(x)=∫0E(x)dE=∫−xpxKSε0−qNAdx=−KSε0qNA(x+xp)−xp<x<0E(x)=−∫E(x)0dE=−∫xxnKSε0qNDdx=−KSε0qND(xn−x)0<x<xn静电电势V:
V ( x ) = ∫ 0 V ( x ) d V = ∫ − x p x q N A K S ε 0 ( x + x p ) d x = q N A 2 K S ε 0 ( x + x p ) 2 V ( x ) = V b i − ∫ V ( x ) V b i d V = V b i − ∫ x x n q N D K S ε 0 ( x n − x ) d x = V b i − q N D 2 K S ε 0 ( x n − x ) 2 V\left( x \right) =\int_0^{V\left( x \right)}{dV}=\int_{-x_p}^x{\frac{qN_A}{K_S\varepsilon _0}\left( x+x_p \right) dx=\frac{qN_A}{2K_S\varepsilon _0}\left( x+x_p \right) ^2}\,\, \\ V\left( x \right) =V_{bi}-\int_{V\left( x \right)}^{V_{bi}}{dV}=V_{bi}-\int_x^{x_n}{\frac{qN_D}{K_S\varepsilon _0}\left( x_n-x \right) dx=V_{bi}-\frac{qN_D}{2K_S\varepsilon _0}\left( x_n-x \right) ^2}\,\, V(x)=∫0V(x)dV=∫−xpxKSε0qNA(x+xp)dx=2KSε0qNA(x+xp