Second order Effects – Non ideal IV characteristics of MOSFET

Contents
Short Channel Effects
Channel Length Modulation
Model for channel length modulation
Early Voltage
Mobility Degradation (Surface Scattering)
Velocity Saturation
Body Effect (Back Gate Effect)
Physical Process
Mathematical Formulae
Drain Induced Barrier Lowering(DIBL)
Leakage Current Effects
Subthreshold Conduction
Gate Tunneling
Reverse Bias Diode Current (Junction Leakage)
MOS Capacitor
Modes of operation
Capacitance-Voltage(CV) characteristics
Parasitic Components
Parasitic Capacitance in MOSFET
Parasitic Resistance in MOSFET
Conclusion

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