文章目录
- Ch 21 Charge(电荷)
- Ch 22 Electric Fields(电场)
- Ch 23 GAUSS'LAW(高斯定律)
- Ch 24 ELECTRIC POTENTIAL(电势)
- Ch 25 CAPACITANCE(电容)
- CH26 CURRENT AND RESISTANCE(电流和电阻)
- Ch 27 (电路)
- Ch28 MAFNETIC FIELDS(磁场)
- ch 29 MAGNETIC FIELDS DUE TO CURRENTS(电流的磁场)
- Ch30 Induction and inductance(电感和感应)
- Ch32 MAXWELL'S EQUATIONS (麦克斯韦方程)
- Ch 33 Electromagenetic waves(电磁波)
- Ch 37 Relativity (相对论)
- Ch 38 Photons and Matter Wave(光子和物质波)
- Ch 39 再论物质波(More about matter waves)
Ch 21 Charge(电荷)
库伦定律(Coulomb’s Law)
F
=
1
4
π
ε
0
q
1
q
2
r
2
F = \frac{1}{4\pi \varepsilon_0}\frac{q_1q_2}{r^2}
F=4πε01r2q1q2
重要参数:
- k = 9.0 × 1 0 9 N . m 2 / C 2 \times10^9N.m^2/C^2 ×109N.m2/C2
- ε 0 = 8.85 × 1 0 − 12 C 2 / N ⋅ m 2 \varepsilon_0 = 8.85\times 10^{-12}C^2/N\cdot m^2 ε0=8.85×10−12C2/N⋅m2
电荷是量子化的, e = 1.602 × 1 0 − 19 C e = 1.602\times 10^{-19}C e=1.602×10−19C
Ch 22 Electric Fields(电场)
电场的定义式:
E
⃗
=
F
⃗
q
0
\vec{E} = \frac{\vec{F}}{q_0}
E=q0F
点电荷形成的电场
E
=
1
4
π
ε
0
q
r
2
E = \frac{1}{4\pi \varepsilon_0}\frac{q}{r^2}
E=4πε01r2q
微元法
d
q
=
λ
d
s
∴
E
=
1
4
π
ε
0
λ
d
s
r
2
dq = \lambda ds\\ \therefore E =\frac{1}{4\pi \varepsilon_0}\frac{\lambda ds}{r^2}
dq=λds∴E=4πε01r2λds
电偶极子形成的电场
这里做了近似,要求z远大于d
E
=
1
2
π
ε
0
p
z
3
E = \frac{1}{2\pi\varepsilon_0}\frac{p}{z^3}
E=2πε01z3p
正电荷环形成的电场
圆环半径为R, 点距离圆环圆心的高度是z
E
=
q
z
4
π
ε
0
(
z
2
+
R
2
)
3
2
E = \frac{qz}{4\pi\varepsilon_0(z^2+R^2)^{\frac{3}{2}}}
E=4πε0(z2+R2)23qz
如果z >> R,那么上式可以简化为
E
=
q
z
4
π
ε
0
z
3
E = \frac{qz}{4\pi\varepsilon_0z^3}
E=4πε0z3qz
带电圆盘引起的电场
其中
σ
\sigma
σ是单位面积的电荷量(即面电荷密度)
E
=
σ
2
ε
0
(
1
−
z
z
2
+
R
2
)
E = \frac{\sigma}{2\varepsilon_0}(1-\frac{z}{\sqrt{z^2+R^2}})
E=2ε0σ(1−z2+R2z)
当R->
∞
∞
∞时,
E
=
σ
2
ε
\displaystyle E = \frac{\sigma}{2\varepsilon}
E=2εσ
偶极子在电场中的特性
对偶极子的力矩
τ
⃗
=
p
⃗
×
E
⃗
\vec{\tau} = \vec{p}\times \vec{E}
τ=p×E
势能
U
=
−
p
⃗
⋅
E
⃗
U = -\vec{p}\cdot\vec{E}
U=−p⋅E
重要名词
- electric dipole 电偶极子
- dipole axis 电偶极子轴
- electric dipole moment 电偶极距 p = q d p = qd p=qd , 其中d是两个电偶极子的距离
- charge density 电荷密度
Ch 23 GAUSS’LAW(高斯定律)
Flux
ϕ
=
∮
E
⃗
⋅
d
A
⃗
\phi = \oint \vec{E}\cdot d\vec{A}
ϕ=∮E⋅dA
Guass’s Law
ε
0
∮
E
⃗
⋅
d
A
⃗
=
q
e
n
c
\varepsilon_0 \oint \vec{E}\cdot d\vec{A} = q_{enc}
ε0∮E⋅dA=qenc
带电独立导体的特性
过量的电荷放置在孤立导体上,那么电荷将全部移到导体的表面,导体体内不会有过量的电荷存在,也就是导体处于静电平衡状态中。(金属内部电场为0)
柱面对称(Cylindrical Symmetry)
根据高斯定律,我们可以得到
ε
0
E
(
2
π
r
h
)
=
λ
h
\varepsilon_0 E(2\pi rh) = \lambda h
ε0E(2πrh)=λh
所以我们得到
E
=
λ
2
π
ε
0
r
E = \frac{\lambda}{2\pi\varepsilon_0r}
E=2πε0rλ
一个大的平面上
E
=
σ
ε
0
E = \frac{\sigma}{\varepsilon_0}
E=ε0σ
绝缘薄片(Nonconducting Sheet)
ε
0
(
E
A
+
E
A
)
=
σ
A
\varepsilon_0(EA+EA) = \sigma A
ε0(EA+EA)=σA
两块导体平板
这种题目画图示意即可
E
=
2
σ
1
ε
0
=
σ
ε
0
E=\frac{2\sigma_1}{\varepsilon_0}=\frac{\sigma}{\varepsilon_0}
E=ε02σ1=ε0σ
球面对称(Spherical Symmetry)
和高中所学一致
Ch 24 ELECTRIC POTENTIAL(电势)
由电偶极子引起的电势(Potential due to an Electric Dipole)
但满足r>>d,有
r
(
+
)
−
r
(
−
)
≈
d
c
o
s
θ
r
(
+
)
−
r
(
−
)
=
r
2
r_{(+)}-r_{(-)} \approx dcos\theta \\r_{(+)}-r_{(-)} = r^2
r(+)−r(−)≈dcosθr(+)−r(−)=r2
所以我们得到
V
=
q
4
π
ε
o
d
c
o
s
θ
r
2
∴
V
=
1
4
π
ε
o
p
c
o
s
θ
r
2
V = \frac{q}{4\pi\varepsilon_o}\frac{dcos\theta}{r^2}\\\therefore V = \frac{1}{4\pi\varepsilon_o}\frac{pcos\theta}{r^2}
V=4πεoqr2dcosθ∴V=4πεo1r2pcosθ
p的方向是从负电荷指向正电荷的
由连续电荷分布引起的电势(Potential Due to a Continuous Charge Distribution)
V
=
1
4
π
ε
0
∫
d
q
r
V = \frac{1}{4\pi\varepsilon_0}\int\frac{dq}{r}
V=4πε01∫rdq
电荷线
length L,uniform linear density λ \lambda λ,p距离电荷线的距离是d
KaTeX parse error: Expected 'EOF', got '&' at position 4: V &̲= \frac{1}{4\pi…
带电圆盘
微元法,其中p距离圆盘的高度为r
d
q
=
σ
(
2
π
R
′
)
(
d
R
′
)
∴
d
V
=
1
4
π
ε
0
σ
(
2
π
R
′
)
(
d
R
′
)
z
2
+
R
′
2
dq = \sigma (2\pi R')(dR')\\\therefore dV = \frac{1}{4\pi\varepsilon_0}\frac{\sigma (2\pi R')(dR')}{\sqrt{z^2+R'^2}}
dq=σ(2πR′)(dR′)∴dV=4πε01z2+R′2σ(2πR′)(dR′)
计算电场
E
=
−
Δ
V
Δ
s
E = -\frac{\Delta V}{\Delta s}
E=−ΔsΔV
即沿着x,y,z方向求导
电势能
静止点电荷系统的电势能,等于把各点电荷从无穷远处移入组成该系统时外力所做的功
孤立带电导体的电势
壳内所有点的电势具有和表面电势相同的值
Ch 25 CAPACITANCE(电容)
计算电场(Electric Field)
因为 E ⃗ \vec{E} E和 A ⃗ \vec{A} A总是平行,根据高斯定律
q
=
ε
0
E
A
q = \varepsilon_0EA
q=ε0EA
计算电势差(Potential difference)
V
=
∫
−
+
E
d
s
V = \int_-^+Eds
V=∫−+Eds
平行板电容器(A Parallel-Plate Capacitor)
电势差为
V
=
E
d
e
V = Ede
V=Ede
根据高斯定律,我们得到
C
=
ε
0
A
d
C= \frac{\varepsilon_0A}{d}
C=dε0A
圆柱形电容器(A Cyclindritor)
根据高斯定律
q
=
ε
0
E
(
2
π
r
L
)
∴
V
=
∫
−
+
E
d
s
=
q
2
π
ε
0
L
l
n
(
b
a
)
∴
C
=
q
/
V
=
2
π
ε
0
L
l
n
(
b
/
a
)
q = \varepsilon_0 E(2\pi rL)\\\therefore V= \int_-^+Eds = \frac{q}{2\pi \varepsilon_0 L}ln(\frac{b}{a})\\\therefore C = q/V = 2\pi\varepsilon_0 \frac{L}{ln(b/a)}
q=ε0E(2πrL)∴V=∫−+Eds=2πε0Lqln(ab)∴C=q/V=2πε0ln(b/a)L
球形电容器
方法是圆柱形电容器是一样的,只是高斯公式的A改变而引起的其他数值的变化而已。
q
=
ε
0
E
(
4
π
r
2
)
q = \varepsilon_0E(4\pi r^2)
q=ε0E(4πr2)
最后的表达式为:
C
=
4
π
ε
0
a
b
b
−
a
C = 4\pi \varepsilon_0 \frac{ab}{b-a}
C=4πε0b−aab
孤立的球体
我们假定另一个极板是在无穷远处,即为b-> ∞ \infin ∞,那么我们可以把球形电容器的公式化为:
C
=
4
π
ε
0
R
C = 4\pi \varepsilon_0 R
C=4πε0R
电容器储存的能量
U
=
q
2
2
C
=
1
2
C
V
2
U = \frac{q^2}{2C} = \frac{1}{2}C V^2
U=2Cq2=21CV2
能量密度(Energy Density)
指的是单位体积的电势能
u
=
U
A
d
=
1
2
ε
0
E
2
u = \frac{U}{Ad} = \frac{1}{2}\varepsilon_0E^2
u=AdU=21ε0E2
有介电质(Dielectric)的电容器
k表示绝缘材料的介电常量,公式中将 ε 0 \varepsilon_0 ε0改为 k ε 0 k\varepsilon_0 kε0即可。介电质的作用是削弱电场
介电质和高斯定律(Dielectrics and Gauss’s Law)
由高斯定律得
注意这里的q是自由电荷
E
=
q
−
q
′
ε
0
A
a
n
d
E
=
E
0
k
=
q
k
ε
0
A
∴
q
−
q
′
=
q
k
E = \frac{q-q'}{\varepsilon_0A}\ and\ E = \frac{E_0}{k} = \frac{q}{k\varepsilon_0A}\\ \therefore q-q' = \frac{q}{k}
E=ε0Aq−q′ and E=kE0=kε0Aq∴q−q′=kq
CH26 CURRENT AND RESISTANCE(电流和电阻)
电流的单位 1A 或者 1C/s
电流密度(Current Density)
J
=
i
A
J = \frac{i}{A}
J=Ai
漂移速率(Drift Speed)
n表示单位体积的电荷量, ne是载流子电荷密度,
J
⃗
=
(
n
e
)
v
d
⃗
\vec{J} = (ne)\vec{v_d}
J=(ne)vd
电阻率(Resistivity)的定义式
ρ
=
E
J
\rho = \frac{E}{J}
ρ=JE
电阻定律
R
=
ρ
L
A
R = \rho \frac{L}{A}
R=ρAL
电阻率的温度系数
ρ
−
ρ
0
=
ρ
0
α
(
T
−
T
0
)
\rho - \rho_0 = \rho_0 \alpha(T-T_0)
ρ−ρ0=ρ0α(T−T0)
微观欧姆定律(Microscopic View of Ohn’s Law)
τ
\tau
τ表示两次连续碰撞的平均时间
ρ
=
m
e
2
n
τ
\rho = \frac{m}{e^2n\tau}
ρ=e2nτm
Ch 27 (电路)
(略)
Ch28 MAFNETIC FIELDS(磁场)
The Definition of
B
⃗
\vec{B}
B
F
B
⃗
=
q
v
B
s
i
n
ϕ
\vec{F_B} = qvBsin\phi
FB=qvBsinϕ
单位
1
T
=
1
N
A
⋅
m
1T = 1\frac{N}{A\cdot m}
1T=1A⋅mN
作用在电流回路上的力矩(Torque on a Current Loop)
τ
=
(
N
i
A
)
B
s
i
n
θ
\tau = (NiA)Bsin\theta
τ=(NiA)Bsinθ
磁偶极矩(The Magnetic Dipole Moment)
我们取磁偶极矩的方向为线圈平面法向量的方向,
μ
=
N
i
A
\mu = NiA
μ=NiA
所以我们可以力矩改写为
τ
⃗
=
μ
⃗
×
B
⃗
\vec\tau = \vec\mu\times\vec B
τ=μ×B
我们发现力矩都等于对应的偶极矩乘以场矢量
类别与电场的电势能 U ( θ ) = − p ⃗ ⋅ E ⃗ U(\theta) = -\vec p \cdot \vec E U(θ)=−p⋅E,磁势能为
U
(
θ
)
=
−
u
⃗
⋅
B
⃗
U(\theta) = -\vec u\cdot \vec{B}
U(θ)=−u⋅B
ch 29 MAGNETIC FIELDS DUE TO CURRENTS(电流的磁场)
Law of Biot and Savart(毕奥-萨伐尔定律)
d
B
⃗
=
μ
0
4
π
i
d
s
⃗
×
r
⃗
r
3
d\vec B = \frac{\mu_0}{4\pi}\frac{id\vec s\times\vec r}{r^3}
dB=4πμ0r3ids×r
重要常量
μ
=
1.26
×
1
0
−
6
T
⋅
m
/
A
\mu = 1.26\times10^{-6}T \cdot m/A
μ=1.26×10−6T⋅m/A
长直导线产生的磁场
B
=
μ
0
i
2
π
R
B = \frac{\mu_0 i }{2\pi R}
B=2πRμ0i
半无限长的导线自然是一半
圆弧型导线电流的磁场
B
=
μ
0
i
ϕ
4
π
R
B = \frac{\mu_0 i \phi}{4\pi R}
B=4πRμ0iϕ
两平行电流的之间的力
F
b
a
=
μ
0
L
i
a
i
b
2
π
d
F_{ba} = \frac{\mu_0Li_ai_b}{2\pi d}
Fba=2πdμ0Liaib
同向电流相互吸引,反向电流相互排斥
安培定律
∮
B
⃗
⋅
d
s
⃗
=
μ
0
i
e
n
c
\oint \vec B \cdot d\vec s = \mu_0 i_{enc}
∮B⋅ds=μ0ienc
只需要考虑回路内的电流即可
长直导线外部的磁场
B
(
2
π
r
)
=
μ
0
i
B(2\pi r) = \mu_0 i
B(2πr)=μ0i
长直导线内部的磁场
B
(
2
π
r
)
=
μ
0
i
r
2
R
2
B(2\pi r) = \mu_0i\frac{r^2}{R^2}
B(2πr)=μ0iR2r2
螺线管的磁场(Solenoids and Toroids)
线圈内部的磁场相当强并且在线圈的横截面上是均匀的,外部很弱(接近于0)
n表示螺线管单位长度的匝数,则
i
e
n
c
=
i
(
n
h
)
∴
B
h
=
μ
0
i
n
h
i
e
.
B
=
μ
0
i
n
i_{enc} = i(nh)\\ \therefore Bh = \mu_0 inh\quad ie.\ B =\mu_0 in
ienc=i(nh)∴Bh=μ0inhie. B=μ0in
螺绕环的磁场
B
(
2
π
r
)
=
μ
0
i
N
B(2\pi r) = \mu_0iN
B(2πr)=μ0iN
作为磁偶极子的载流线圈(Current-Carrying Coil as a Magnetic Dipole)
B
⃗
(
z
)
=
μ
0
2
π
μ
⃗
z
3
\vec{B}(z) = \frac{\mu_0}{2\pi}\frac{\vec\mu}{z^3}
B(z)=2πμ0z3μ
Ch30 Induction and inductance(电感和感应)
法拉第电磁感应定律(Faraday‘s Law of Induction)
magnetic flux(磁通量)
ϕ
B
=
∫
B
⃗
⋅
d
A
⃗
\phi_B = \int \vec B\cdot d\vec A
ϕB=∫B⋅dA
单位$Wb =T\cdot m^2 $
电动势(induced emf)
ε
=
−
N
d
ϕ
B
d
t
\varepsilon = -N\frac{d\phi_B}{dt}
ε=−NdtdϕB
楞次定律(Lenz’s Law)
感生电场(Induced Electric Fields)
变化的磁场产生电场
感生电动势是
E
⃗
⋅
d
s
⃗
\vec E\cdot d\vec s
E⋅ds沿着闭合路径的总和
ε
=
∮
E
⃗
⋅
d
s
⃗
\varepsilon = \oint \vec E\cdot d\vec s
ε=∮E⋅ds
结合法拉第定律,我们得到
∮
E
⃗
⋅
d
s
⃗
=
−
d
ϕ
B
d
t
\oint \vec E\cdot d\vec s = - \frac{d\phi_B}{dt}
∮E⋅ds=−dtdϕB
感生电场的电场线形成闭合回路。
电势只对静止电荷产生的电场有意义,对由感应产生的电场无意义
电感器和电感(Inductors and Inductance)
电感的定义式为
L
=
N
ϕ
B
i
L = \frac{N\phi_B}{i}
L=iNϕB
N
ϕ
B
N\phi_B
NϕB称为磁链(magnetic flux linkage)
单位为 H = T ⋅ m 2 / A H = T\cdot m^2/A H=T⋅m2/A
螺线管的电感
L
=
N
ϕ
B
i
=
n
l
(
μ
0
i
n
)
A
i
=
μ
0
n
2
A
L = \frac{N\phi_B}{i}= \frac{nl(\mu_0 i n)A}{i} = \mu_0n^2A
L=iNϕB=inl(μ0in)A=μ0n2A
自感(Self-induction)
ε
0
=
−
L
d
i
d
t
\varepsilon_0 = - L \frac{di}{dt}
ε0=−Ldtdi
电感储存的磁能
U
B
=
1
2
L
i
2
U_B = \frac{1}{2}Li^2
UB=21Li2
磁场的能量密度
u
B
=
U
B
A
l
=
L
i
2
2
A
l
=
1
2
μ
0
n
2
i
2
=
B
2
2
μ
0
u_B = \frac{U_B}{Al} = \frac{Li^2}{2Al} = \frac{1}{2} \mu_0n^2i^2 = \frac{B^2}{2\mu_0}
uB=AlUB=2AlLi2=21μ0n2i2=2μ0B2
互感
M
21
=
N
2
ϕ
21
i
1
∴
ε
1
=
−
M
d
i
1
d
t
M_{21} = \frac{N_2\phi_{21}}{i_1}\\\therefore \varepsilon_1 = -M\frac{di_1}{dt}
M21=i1N2ϕ21∴ε1=−Mdtdi1
Ch32 MAXWELL’S EQUATIONS (麦克斯韦方程)
感应磁场(induced magnetic fields)
∮
B
⃗
⋅
d
s
⃗
=
μ
0
ε
0
d
ϕ
E
d
t
\oint \vec B\cdot d\vec s = \mu_0 \varepsilon_0 \frac{d\phi_E}{dt}
∮B⋅ds=μ0ε0dtdϕE
感生磁场和感生电场方向相反。
总磁场由一个电流和一个变化的电场共同产生
∮
B
⃗
⋅
d
s
⃗
=
μ
0
ε
0
d
ϕ
E
d
t
+
μ
0
i
e
n
c
\oint \vec B \cdot d\vec s = \mu_0\varepsilon_0 \frac{d\phi_E}{dt}+\mu_0i_{enc}
∮B⋅ds=μ0ε0dtdϕE+μ0ienc
位移电流(Displayment Current)
i
d
=
ε
0
d
ϕ
E
d
t
i_d = \varepsilon_0\frac{d\phi_E}{dt}
id=ε0dtdϕE
那安培-麦克斯韦方程可以改写为:
∮
B
⃗
⋅
d
s
⃗
=
μ
0
i
d
,
e
n
c
+
μ
0
i
e
n
c
\oint \vec B\cdot d\vec s = \mu_0i_{d,enc}+\mu_0i_{enc}
∮B⋅ds=μ0id,enc+μ0ienc
极板充电的实际电流与虚拟电流相等
麦格斯为方程组
Name | Equation | |
---|---|---|
Guass’s Law for electricity | ∮ E ⃗ ⋅ d A ⃗ = q e n c ε 0 \oint \vec E\cdot d\vec A =\displaystyle \frac{q_{enc}}{\varepsilon_0} ∮E⋅dA=ε0qenc | 联系静电通量与包围的净电荷 |
Guass’s Law for magnetism | ∮ B ⃗ ⋅ d A ⃗ = 0 \oint \vec B\cdot d\vec A = 0 ∮B⋅dA=0 | 联系净磁通量与包围的磁电荷 |
Faraday’s law | ∮ E ⃗ ⋅ d s ⃗ = − d ϕ B d t \oint \vec E\cdot d\vec s =\displaystyle - \frac{d\phi_B}{dt} ∮E⋅ds=−dtdϕB | 联系感应磁场和变化的磁通量 |
Ampere-Maxwell law | ∮ B ⃗ ⋅ d s ⃗ = μ 0 ε 0 d ϕ E d t + μ 0 i e n c \oint \vec B \cdot d\vec s =\displaystyle \mu_0\varepsilon_0 \frac{d\phi_E}{dt}+\mu_0i_{enc} ∮B⋅ds=μ0ε0dtdϕE+μ0ienc | 联系感应磁场和变化电通量和电流 |
Ch 33 Electromagenetic waves(电磁波)
电磁场的振幅
E
=
E
m
s
i
n
(
k
x
−
ω
t
)
B
=
B
m
s
i
n
(
k
x
−
ω
t
)
E = E_msin(kx - \omega t)\\ B = B_msin(kx-\omega t)
E=Emsin(kx−ωt)B=Bmsin(kx−ωt)
波速为光速
c
=
1
μ
0
ε
0
c = \frac{1}{\sqrt{\mu_0\varepsilon_0}}
c=μ0ε01
波速与电场和磁场的振幅关系是:
E
m
B
m
=
c
\frac{E_m}{B_m} = c
BmEm=c
坡印亭矢量(Poynting Vector)
该量给出了波在该点的传播方向及能量运输的方向
S
⃗
=
1
μ
0
E
⃗
×
B
⃗
\vec S = \frac{1}{\mu_0}\vec E \times \vec B
S=μ01E×B
另一种表示方法为
S
=
(
功
率
面
积
)
i
n
s
t
S = (\frac{功率}{面积})_{inst}
S=(面积功率)inst
在电磁波中
S
=
1
μ
0
E
B
∴
S
=
1
c
μ
0
E
2
S = \frac{1}{\mu_0}EB\\ \therefore S = \frac{1}{c\mu_0}E^2
S=μ01EB∴S=cμ01E2
波的平均强度 I ,也就是
S
a
v
g
S_{avg}
Savg,
I
=
=
1
c
μ
0
[
E
m
2
s
i
n
2
(
k
x
−
ω
t
)
]
a
v
g
I = = \frac{1}{c\mu_0}[E_m^2sin^2(kx-\omega t)]_{avg}
I==cμ01[Em2sin2(kx−ωt)]avg
电场的root-mean-square, $ E_{rms} =\displaystyle \frac{E_m}{\sqrt 2}$, 所以我们可以把式子写为
I
=
1
c
μ
0
E
r
m
s
2
I= \frac{1}{c\mu_0}E_{rms}^2
I=cμ01Erms2
强度随距离的变化
其中
P
s
P_s
Ps表示源的功率
I
=
P
s
4
π
r
2
I = \frac{P_s}{4\pi r^2}
I=4πr2Ps
偏振(Polarization)
减半定则(one-half rule)
I
=
1
2
I
0
I = \frac{1}{2} I_0
I=21I0
偏振光经过偏振片之后,
θ
\theta
θ是
E
⃗
\vec E
E 和薄片的偏振方向的夹角,透过的平行分量是
E
y
=
E
c
o
s
θ
E_y = Ecos\theta
Ey=Ecosθ
波长强度正比于电场E,所以经过偏振之后我们有,cosine-square rule(余弦平方原则)
I
=
I
0
c
o
s
2
θ
I = I_0cos^2\theta
I=I0cos2θ
反射和折射(Reflection and Refraction)
反射定律——入射角等于出射角
θ
1
′
=
θ
1
\theta_1' = \theta_1
θ1′=θ1
折射定律(n1,n2表示不同介质下的折射率)
n
2
s
i
n
θ
2
=
n
1
s
i
n
θ
2
n_2sin\theta_2 = n_1sin\theta_2
n2sinθ2=n1sinθ2
反射引起的偏振(Polarization by Reflection)
Brewster’s Law(布儒斯特定律)
当光以一个特别的角度(Brewster angle
θ
B
\theta_B
θB),反射光没有垂直分量,反射角
θ
B
\theta_B
θB, 入射角
θ
r
\theta_r
θr, 满足
θ
B
+
θ
r
=
90
°
\theta_B + \theta_r = 90°
θB+θr=90°
Ch 37 Relativity (相对论)
同时性的相对性(The Relativity of Simultaneity)
同时性不是一个绝对的而是一个相对的概念,决定于观察者的运动
时间的相对性
time dilation(时间膨胀)
Δ
t
=
Δ
t
0
1
−
(
v
/
c
)
2
\Delta t = \frac{\Delta t_0}{\sqrt {1-(v/c)^2}}
Δt=1−(v/c)2Δt0
speed parameter(速率参量)
β
=
v
c
(
<
1
)
\beta = \frac{v}{c}(<1)
β=cv(<1)
洛伦兹因子(Lorentz factor)
γ
=
1
1
−
β
2
=
1
1
−
(
v
c
)
2
\gamma = \frac{1}{\sqrt{1-\beta^2}} =\displaystyle \frac{1}{\sqrt{1-(\frac{v}{c})^2}}
γ=1−β21=1−(cv)21
所以我们得到
Δ
t
=
γ
Δ
t
0
\Delta t = \gamma \Delta t_0
Δt=γΔt0
长度的相对性(The relativity of length)
长度缩短公式
L
=
L
0
γ
L = \frac{L_0}{\gamma}
L=γL0
洛伦兹变换(The Lorentz Transformation)
洛伦兹变化方程
x
′
=
γ
(
x
−
v
t
)
t
′
=
γ
(
t
−
v
x
/
c
2
)
x' = \gamma (x-vt)\\t' = \gamma (t-vx/c^2)
x′=γ(x−vt)t′=γ(t−vx/c2)
光的多普勒效应(Doppler Effect)
对于低速多普勒效应,我们有
f
=
f
0
(
1
−
β
+
1
2
β
2
)
f = f_0 (1-\beta + \frac{1}{2}\beta^2)
f=f0(1−β+21β2)
天文多普勒效应(Astronomical Doppler Effect)
当
β
\beta
β足够小,上面式子中的
β
2
\beta^2
β2可以把它忽略掉,
f
=
f
0
(
1
±
β
)
f
=
c
λ
v
=
Δ
λ
c
λ
f = f_0(1±\beta)\\f=\frac{c}{\lambda}\\v = \frac{\Delta \lambda c}{\lambda}
f=f0(1±β)f=λcv=λΔλc
对于动量来说,
p
⃗
=
γ
m
v
⃗
\vec p = \gamma m \vec v
p=γmv
对能量来说,
质量能
E
0
=
m
c
2
E_0 = mc^2
E0=mc2
物体总能量
E
=
m
c
2
+
K
=
γ
m
c
2
E = mc^2+K = \gamma mc^2
E=mc2+K=γmc2
孤立系统中物体总能量是不会发生变化的
物体动能
E
k
=
m
c
2
(
γ
−
1
)
E_k = mc^2(\gamma - 1)
Ek=mc2(γ−1)
Ch 38 Photons and Matter Wave(光子和物质波)
光子能量
E
=
h
f
E = hf
E=hf
光电效应(The Photoelectric Effect)
遏止电压(Stopping potential)
K
m
a
x
=
e
V
s
t
o
p
K_{max} = eV_{stop}
Kmax=eVstop
光电效应方程(The Photoelectric effect)
h
f
=
ϕ
+
K
m
a
x
V
s
t
o
p
=
(
h
e
)
f
−
ϕ
e
hf = \phi + K_{max}\\ V_{stop} = (\frac{h}{e})f - \frac{\phi}{e}
hf=ϕ+KmaxVstop=(eh)f−eϕ
光子的动量
p
=
h
λ
p = \frac{h}{\lambda}
p=λh
康普顿实验(Compton’s experiment)
两个波峰之间的
Δ
λ
\Delta \lambda
Δλ满足
Δ
λ
=
h
m
c
(
1
−
c
o
s
ϕ
)
\Delta \lambda = \frac{h}{mc} (1-cos\phi)
Δλ=mch(1−cosϕ)
物质波
λ
=
h
p
\lambda = \frac{h}{p}
λ=ph
薛定谔方程(Schrodinger’s Equation)
ψ
(
x
,
y
,
z
,
t
)
=
ψ
(
x
,
y
,
z
)
e
−
i
ω
t
\psi(x,y,z,t) = \psi(x,y,z)e^{-i\omega t}
ψ(x,y,z,t)=ψ(x,y,z)e−iωt
∣
Ψ
2
∣
|\Psi^2|
∣Ψ2∣ 是概率密度(probability density)
薛定谔方程一维运动
d
2
ψ
d
2
x
+
8
π
2
m
h
2
[
E
−
U
(
x
)
]
ψ
=
0
\frac{d^2 \psi}{d^2 x} + \frac{8\pi ^2 m }{h^2}[E-U(x)]\psi = 0
d2xd2ψ+h28π2m[E−U(x)]ψ=0
海参堡不确定原理(Heisenberg’s Uncentainty Principle)
其中
ℏ
=
h
2
π
\hslash = \displaystyle\frac{h}{2\pi}
ℏ=2πh
Δ
x
⋅
Δ
p
x
≥
ℏ
Δ
y
⋅
Δ
p
y
≥
ℏ
Δ
z
⋅
Δ
p
z
≥
ℏ
\Delta x \cdot \Delta p_x \ge \hslash\\ \Delta y \cdot \Delta p_y \ge \hslash\\ \Delta z \cdot \Delta p_z \ge \hslash
Δx⋅Δpx≥ℏΔy⋅Δpy≥ℏΔz⋅Δpz≥ℏ
势垒隧穿 (barrier tunneling)
透射系数(transmission coefficient)
T
=
e
−
2
k
L
,
k
=
8
π
2
m
(
U
0
−
E
)
h
2
T = e^{-2kL},k = \sqrt{\frac{8\pi^2 m (U_0-E)}{h^2}}
T=e−2kL,k=h28π2m(U0−E)
Ch 39 再论物质波(More about matter waves)
能级的能量
E
n
=
(
h
2
8
m
L
2
)
n
2
E_n = (\frac{h^2}{8mL^2})n^2
En=(8mL2h2)n2
检测的概率(Probability of Detection)
p
(
x
)
=
ψ
2
(
x
)
d
x
p(x) = \psi^2(x)dx
p(x)=ψ2(x)dx
在
0
≤
x
≤
L
0\le x \le L
0≤x≤L 区间里,我们有
ψ
2
(
x
)
=
A
2
s
i
n
2
(
n
π
L
x
)
,
n
=
1
,
2
,
3
,
4
,
…
…
\psi ^2(x) = A^2 sin^2(\frac{n\pi}{L} x),n=1,2,3,4,……
ψ2(x)=A2sin2(Lnπx),n=1,2,3,4,……
根据归一性(积分为1),我们得到
A
=
2
/
L
A = \sqrt {2/L}
A=2/L
二维和三维的电子陷阱(Two and Three-Dimensional Electron Traps)
E
n
x
.
n
y
=
h
2
8
m
(
n
x
2
L
x
2
+
n
y
2
L
y
2
)
E_{nx.ny} = \frac{h^2}{8m}(\frac{n_x^2}{L_x^2}+\frac{n_y^2}{L_y^2})
Enx.ny=8mh2(Lx2nx2+Ly2ny2)
氢原子的势能
U
=
−
1
4
π
ε
0
e
2
r
U = - \frac{1}{4\pi \varepsilon_0}\frac{e^2}{r}
U=−4πε01re2
氢原子各量子态能量由下式子给出:
E
n
=
−
13.6
e
V
n
2
,
f
o
r
n
=
1
,
2
,
3
,
4.
…
…
E_n = - \frac{13.6eV}{n^2},for\ n = 1,2,3,4.……
En=−n213.6eV,for n=1,2,3,4.……