dram的刷新详解

最新推荐文章于 2024-06-30 21:41:38 发布

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最新推荐文章于 2024-06-30 21:41:38 发布

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分类专栏： dram 文章标签： dram refresh 刷新详解

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现代DRAM系统中，内存控制器定期执行auto-refresh命令，确保每64毫秒（高温下32毫秒）刷新所有行。每次刷新操作占用tRFC时间，且在tREFI（7.8us或3.9us）内完成对8K行组的刷新。早期有RAS-only刷新方式，但现在主要使用分布式刷新，减少长时间不可用的情况。JEDEC标准规定，每个bank的行需在64毫秒内刷新一次。

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In typical modern DRAM systems, the memory controller periodically issues an auto-refresh (auto-refresh is sometimes called CAS-before-RAS refresh)command to the DRAM.The DRAM chip then chooses which rows to refresh using an internal counter, and refreshes a number of rows based on the device capacity. During normal temperature operation (below 85’C), the average time between auto-refresh commands(called tREFI ) is 7.8us . In the extended temperature range (between 85 _C and 95 _C), the temperature range in which dense server environments operate [10] and 3D-stacked DRAMs are expected tooperate [1], the time between

auto-refresh commands is halved to 3.9 us [15]. An auto-refresh operation occupies all banks on the ranksimultaneously (preventing the rank from servicing any requests) for a lengthof time tRFC, where tRFC depend