dram的刷新详解

现代DRAM系统中,内存控制器定期执行auto-refresh命令,确保每64毫秒(高温下32毫秒)刷新所有行。每次刷新操作占用tRFC时间,且在tREFI(7.8us或3.9us)内完成对8K行组的刷新。早期有RAS-only刷新方式,但现在主要使用分布式刷新,减少长时间不可用的情况。JEDEC标准规定,每个bank的行需在64毫秒内刷新一次。
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In typical modern DRAM systems, the memory controller periodically issues an auto-refresh (auto-refresh is sometimes called CAS-before-RAS refresh)command to the DRAM.The DRAM chip then chooses which rows to refresh using an internal counter, and refreshes a number of rows based on the device capacity. During normal temperature operation (below 85’C), the average time between auto-refresh commands(called tREFI ) is 7.8us . In the extended temperature range (between 85 _C and 95 _C), the temperature range in which dense server environments operate [10] and 3D-stacked DRAMs are expected tooperate [1], the time between

auto-refresh commands is halved to 3.9 us [15]. An auto-refresh operation occupies all banks on the ranksimultaneously (preventing the rank from servicing any requests) for a lengthof time tRFC, where tRFC depend

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