IRLR3802场效应管P TO P兼容物料DB004NG,20V90A 3.5mΩ TO-252封装
型号:DB004NG
电压电流:20V90A
内阻:3.5mΩ
封装:TO-252封装
应用:太阳能灯、数码产品锂电池保护
Description:
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.
Features:
1) VDS=20V,ID=90A,RDS(ON)<3.5mΩ@VGS=4.5V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.