Tin whisker phenomenon in electronic packaging and its control strategy

Tin whiskers are slender, needle-shaped tin whiskers that form spontaneously on the surface of pure tin (Sn) or of a tin-containing alloy. These whiskers are usually only a few micrometers in diameter, but can be several millimeters long or even more than 10 millimeters long, which can cause serious reliability problems. The following is a comprehensive explanation of tin whisker growth mechanism, influencing factors and inhibition measures:

Tin whisker growth mechanism

1. Driving force: The driving force for the growth of tin

It was mainly derived from the Cu₆Sn₅ intermetallic compound formed by the reaction between Sn and Cu at room temperature. This reaction creates compressive stress within Sn.

2. Release of compressive stress: Due to the high homogenization temperature of Sn at room temperature, Sn atoms diffuse rapidly along grain boundaries. The compressive stress is released through atomic diffusion and rearrangement, which leads to the migration of Sn atomic layer perpendicular to the stress direction, spreading along the grain boundary to the root of the tin whisker, and promoting the growth of tin whisker.

3. Spontaneous process: As long as there are free Sn and Cu atoms, tin whisker growth will continue and is a spontaneous process.

FIG. 2 Flute whisker and whisker with sharp Angle completely

The main factors affecting the growth of tin fin

1. Grain orientation and size: columnar and single-crystal columnar crystals are more likely to lead to tin whisker growth, and fine grains are more likely to produce tin whisker.

2. Coating thickness: 2~3μm thick coating is the most likely to occur under high stress.

3. Material under the coating: When Ni is used as the backing material, the tin whisker growth tendency is small, and when Cu is used as the backing material, the tin whisker growth tendency is large.

4. Temperature and humidity: the growth of tin whiskers depends on temperature and humidity, and the growth of tin whiskers is less likely under low temperature and low humidity conditions.

5. Material purity: pure tin surface is most likely to make tin whiskers grow.

Measures to inhibit the growth of tin fin

1. Alloying: Adding alloying elements such as Bi or Ag in the plating tank can effectively prevent the growth of tin whiskers, but it is necessary to pay attention to the processability and cost of the alloy.

2. Diffusion barrier layer: Adding a diffusion barrier layer between Sn and Cu, such as electroplating a thin layer of Ni, can slow down the reaction between Sn and Cu, thereby inhibiting tin whisker growth.

3. Surface pretreatment: Pre-electroplating NiPdAu on the surface of Cu matrix or lead frame can also effectively inhibit tin whisker growth.

4. Optimize the process parameters: control the welding temperature as low as possible and the humidity as small as possible to reduce the possibility of tin growth.

FIG. 3 SEM photo of short whisker on pure Sn coating

Effect of surface oxides on the growth of tin fin

1. Necessary conditions: tin whisker growth occurs only in metals that produce a surface oxide film.

2. Oxide film thickness: Too thick surface oxide film will prevent tin whisker growth, while too thin is conducive to tin whisker growth.

3. Oxide film discontinuity: The discontinuity of oxide film provides a channel for tin whisker growth.

4. Tin whisker morphology: The existence of surface oxide film prevents the tin whisker from growing sideways and maintains a uniform cross section of the tin whisker.

In short, tin whisker growth is a complex process involving many factors. The effect of tin whisker on the reliability of electronic devices can be effectively reduced by understanding the mechanism of tin whisker growth and taking corresponding measures to inhibit it.