内存设计指南:01 Xilinx DDR4 design guide解析

最近有很多网友咨询FPGA DDR4为什么速率总是上不去的问题,发现他们的设计确实很随意,都没有遵守一些手册的基本要求,所以今天和大家一起重新读一读DDR4 design guide,看看哪些要求是一定不能忽略的。

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首次设计一款新的芯片或者内存方案时,可能会无从下手。对于内存设计,官方指导首推JEDEC规范,每一代内存推出时,在JEDEC官网均能找到对应的规范文档、各种内存形式的说明文档如DDR4-JESD79、DDR4 SDRAM UDIMM Design Specification以及内存条DEMO等。如果上述资源无法获得,可以查看对应芯片的设计手册,如CPU、FPGA芯片或者DDR颗粒的硬件设计手册、PCB design、datasheet等。

笔者谨以此文抛砖引玉,以Xilinx FPGA为例,对芯片内存部分设计要求进行解析,以指导内存设计。

Xilinx UG583:《UltraScale Architecture PCB Design》这份文档详细介绍了UltraScale平台PCB设计要求,包括电源、各类总线。此文档已分享至网盘,文末有下载链接。

其中第二章为内存相关的内容:    

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此章节介绍了DDR3/DDR4/RLDRAM3/QDRII+/QDR-IV等多种类型的内存设计。本文以目前最常用的DDR4为例展开。

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01 叠层  

对于有叠层设计经验的工程师而言,根据板厚、层数、板材等要求就可以设计出合适的叠层,如下图这种:

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如果不了解如何设计,可以

The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as sixteen-banks, 4 bank group with 4 banks for each bank group for x4/x8 and eight-banks, 2 bank group with 4 banks for each bankgroup for x16 DRAM. The DDR4 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. The 8n prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR4 SDRAM consists of a single 8n-bit wide, four clock data transfer at the internal DRAM core and eight corresponding n-bit wide, one-half clock cycle data transfers at the I/O pins. Read and write operation to the DDR4 SDRAM are burst oriented, start at a selected location, and continue for a burst length of eight or a ‘chopped’ burst of four in a programmed sequence. Operation begins with the registration of an ACTIVATE Command, which is then followed by a Read or Write command. The address bits registered coincident with the ACTIVATE Command are used to select the bank and row to be activated (BG0-BG1 in x4/8 and BG0 in x16 select the bankgroup; BA0-BA1 select the bank; A0-A17 select the row; refer to “DDR4 SDRAM Addressing” on datasheet). The address bits registered coincident with the Read or Write command are used to select the starting column location for the burst operation, determine if the auto precharge command is to be issued (via A10), and select BC4 or BL8 mode ‘on the fly’ (via A12) if enabled in the mode register. Prior to normal operation, the DDR4 SDRAM must be powered up and initialized in a predefined manner. The following sections provide detailed information covering device reset and initialization, register definition, command descriptions, and device operation.
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