时间轴_内存

年份
1837	Charles Babbage first proposed the Analytical Engine, which was the first computer to use punch cards as memory and a way to program the computer.	查尔斯·巴贝奇（Charles Babbage）首先提出了分析引擎（Analytical Engine），这是第一台使用穿孔卡片作为内存和编程方式的计算机。
1932	Gustav Tauschek developed drum memory in 1932.	古斯塔夫·陶斯克于1932年发明了鼓记忆。
1942	John Atanasoff successfully tested the ABC (Atanasoff-Berry Computer) which was the first computer to use regenerative capacitor drum memory.	John Atanasoff成功测试了ABC（Atanasoft Berry Computer），这是第一台使用再生电容鼓存储器的计算机。
1946	Freddie Williams applied for a patent on his CRT (cathode-ray tube) storing device on December 11, 1946. The device later became known as the Williams tube or, more appropriately, the Williams-Kilburn tube. The tube stored only stored 128 40-bit words and was the first practical form of random-access memory.	1946年12月11日，弗雷迪·威廉姆斯（Freddie Williams）为他的阴极射线管（CRT）存储设备申请了专利。该设备后来被称为威廉姆斯管，更恰当地说，是威廉姆斯-基尔本管。该管只存储128个40位字，是第一种实用的随机存取存储器。
1946	Jan Rajchman began his work on developing the Selectron tube that was capable of storing 256 bits. Because of the popularity of magnetic core memory at the time, the Selectron tube was never put into mass production.	Jan Rajchman开始开发能够存储256位的Selectron管。由于当时磁芯存储器的普及，Selectron管从未大规模生产。
1947	Freddie Williams memory system known as the Williams-Kilburn tube was in working order in 1947.	弗雷迪·威廉姆斯（Freddie Williams）被称为威廉姆斯-基尔本（Williams Kilburn）管的存储系统在1947年处于正常工作状态。
1947	Frederick Viehe filed several of the first patents relating to magnetic-core memory. Others who helped with the development of magnetic-core memory and magnetic drum memory include An Wang, Ken Olsen and Jay Forrester.	弗雷德里克·维埃赫（Frederick Viehe）申请了几项与磁芯存储器相关的首批专利。其他帮助开发磁芯存储器和磁鼓存储器的人包括An Wang、Ken Olsen和Jay Forrester。
1049	Jay Forrester and other researchers came up with the idea of using magnetic-core memory in the Whirlwind computer in 1949.	Jay Forrester和其他研究人员于1949年提出了在旋风计算机中使用磁芯存储器的想法。
1950	The United States government received the UNIVAC 1101 or ERA 1101. This computer was considered to be the first computer that was capable of storing and running a program from memory.	美国政府收到了UNIVAC 1101或ERA 1101。这台计算机被认为是第一台能够从内存中存储和运行程序的计算机。
1951	Jay Forrester applied for a patent for magnetic-core memory, an early type of random access memory (RAM) on May 11, 1951.	1951年5月11日，Jay Forrester申请了磁芯存储器专利，这是一种早期的随机存取存储器（RAM）。
1952	In his master's thesis, Dudley Allen Buck described Ferroelectric RAM (FeRAM) that was not developed until the 1980s and early 1990s.	达德利·阿伦·巴克（Dudley Allen Buck）在其硕士论文中描述了直到20世纪80年代和90年代初才开发的铁电RAM（FeRAM）。
1953	In July 1953 a core memory expansion was added to the ENIAC.	1953年7月，ENIAC增加了核心内存扩展。
1955	Konrad Zuse completed the Z22, the seventh computer model and the first computer that used magnetic storage memory.	Konrad Zuse完成了Z22，这是第七款电脑，也是第一款使用磁存储内存的电脑。
1955	MIT introduced the Whirlwind machine on March 8, 1955, a revolutionary computer that was the first digital computer with magnetic core RAM.	麻省理工学院于1955年3月8日推出旋风机，这是一台革命性的计算机，是第一台具有磁芯RAM的数字计算机。
1955	An Wang was issued U.S. patent #2,708,722 on May 17, 1955, for the invention of the magnetic "Pulse Transfer Controlling Device," which made magnetic core memory a reality.	王于1955年5月17日获得美国专利#2708722，用于发明磁性“脉冲传输控制装置”，使磁芯存储器成为现实。
1955	Bell Labs introduced its first transistor computer. Transistors are faster, smaller, and create less heat than traditional vacuum tubs, making these computers more reliable and efficient.	贝尔实验室推出了第一台晶体管计算机。晶体管比传统的真空管更快、更小、产生的热量更少，使这些计算机更加可靠和高效。
1964	John Schmidt designed a 64-bit MOS p-channel Static RAM while at Fairchild in 1964.	1964年，约翰·施密特（John Schmidt）在飞兆半导体公司（Fairchild）设计了64位MOS p通道静态RAM。
1964	Kenneth Olsen was issued U.S. patent #3,161,861 on December 15, 1964, for magnetic core memory.	Kenneth Olsen于1964年12月15日获得磁芯存储器的美国专利#3161861。
1968	On June 4, 1968, Dr. Robert Dennard at the IBM T.J. Watson Research center was granted U.S. patent #3,387,286 describing a one-transistor DRAM cell. DRAM will later replace magnetic core memory in computers.	1968年6月4日，IBM T.J.Watson研究中心的Robert Dennard博士获得了描述单管DRAM单元的美国专利#3387286。DRAM稍后将取代计算机中的磁芯存储器。
1969	Charles Sie published a dissertation at Iowa State University where he described and demonstrated Phase-change memory (PRAM). Although PRAM has still never been commercially practical, it was still being developed at companies like Samsung.	Charles Sie在爱荷华州立大学发表了一篇论文，描述并演示了相变记忆（PRAM）。尽管PRAM从未在商业上实用，但它仍在三星等公司开发中。
1969	Intel released its first product, the 3101 Schottky TTL bipolar 64-bit static random-access memory (SRAM). In the same year, Intel released the 3301 Schottky bipolar 1024-bit read-only memory (ROM).	英特尔发布了其首款产品3101肖特基TTL双极64位静态随机存取存储器（SRAM）。同年，英特尔发布了3301肖特基双极1024位只读存储器（ROM）。
1970	Intel released its first commercially available DRAM, the Intel 1103, in October 1970. It was capable of storing 1024 bits or 1 kb of memory.	英特尔于1970年10月发布了第一款商用DRAM，即英特尔1103。它能够存储1024位或1kb内存。
1971	While at Intel, Dov Frohman invented and patented (#3,660,819) the EPROM in 1971.	在英特尔工作期间，Dov Frohman于1971年发明并申请了EPROM专利（#3660819）。
1974	While at Intel, Federico Faggin was granted patent #3,821,715 on June 28, 1974, that describes a memory system for a multichip digital computer.	在英特尔工作期间，Federico Faggin于1974年6月28日获得专利#3821715，该专利描述了一种用于多芯片数字计算机的存储系统。
1978	George Perlegos with Intel developed the Intel 2816, the first EEPROM in 1978.	1978年，George Perlegos与Intel合作开发了Intel 2816，这是第一个EEPROM。
1983	Wang Laboratories created the single in-line memory module (SIMM) in 1983.	Wang Laboratories于1983年创建了单列直插内存模块（SIMM）。
1984	Fujio Masuoka invented flash memory in 1984.	藤冈正冈于1984年发明了闪存。
1993	Samsung introduced the KM48SL2000 synchronous DRAM (SDRAM) and quickly became an industry standard in 1993.	三星推出了KM48SL2000同步DRAM（SDRAM），并于1993年迅速成为行业标准。
1996	DDR SDRAM began being sold in 1996.	DDR SDRAM于1996年开始销售。
1999	RDRAM became available for computers in 1999.	RDRAM于1999年开始用于计算机。
2003	DDR2 SDRAM began being sold in 2003.	DDR2 SDRAM于2003年开始销售。
2003	XDR DRAM began being sold in 2003.	XDR DRAM于2003年开始销售。
2007	DDR3 SDRAM began being sold in June 2007.	DDR3 SDRAM于2007年6月开始销售。
2014	DDR4 SDRAM began being sold in September 2014.	DDR4 SDRAM于2014年9月开始销售。