MOS器件物理0203
第二章
- 基本概念
- I/V特性
- 小信号模型
- 信号的表述方式
- 小信号概念的理解
- 跨导
- MOS理想小信号模型
- 二级效应
信号的表示方式
直流或者偏置量:大写的符号和大写的下标
- 直流电压、偏置电压、直流电流、偏置电流
- V G S , I D , V D S , V B . . . V_{GS},I_{D},V_{DS},V_B... VGS,ID,VDS,VB...
小信号:小写的符号和小写的下标
- 电压或者电流增量或变化量
- i d , V g s , V d s . . . i_d,V_{gs},V_{ds}... id,Vgs,Vds...
瞬时量:大写的符号和小写的下标
- − V g s = V G S + v g s -V_{gs}=V_{GS}+v_{gs} −Vgs=VGS+vgs
MOSFET小信号模型
放大器的直流分析
假设MOS工作于饱和区
I D = μ n C o x 2 W L ( V B − V T H ) 2 V O U T = V D D − I D R D \begin{aligned}& I_D=\frac{\mu_nC_{ox}}{2}\frac{W}{L}(V_B-V_{TH})^2\\&V_{OUT}=V_{DD}-I_DR_D\end{aligned} ID=2μnCoxLW(VB−VTH)2VOUT=VDD−IDRD
瞬态分析
I d = μ n C a x 2 W L ( V i n − V T H ) 2 = μ n C o x 2 W L [ ( V B − V T H ) + ν a sin ( ω t ) ] 2 = I D + [ μ n C o x W L ( V B − V T H ) ] ⋅ ν a sin ( ω t ) + μ n C o x 2 W L ⋅ [ ν a sin ( ω t ) ] 2 i d n o n l i n e r i t y \begin{aligned}I_d&=\frac{\mu_nC_{\mathrm{ax}}}{2}\frac{W}{L}(V_{_{in}}-V_{_{TH}})^2=\frac{\mu_nC_{_{ox}}}{2}\frac{W}{L}[(V_{_B}-V_{_{TH}})+\nu_{_a}\sin(\omega t)]^2\\&=I_D+[\mu_nC_{_{ox}}\frac{W}{L}(V_{_B}-V_{_{TH}})]\cdotp\nu_{_a}\sin(\omega t)+\frac{\mu_nC_{_{ox}}{2}\frac{W}{L}\cdotp[\nu_{_a}\sin(\omega t)]^2}\\&\qquad \qquad \qquad \qquad \qquad i_d \qquad \qquad \qquad \qquad \quad nonlinerity\end{aligned} Id=2μnCaxLW(Vin−VTH)2=2μnCoxLW[(VB−VTH)+νasin(ωt)]2=ID+[μnCoxLW(VB−VTH)]⋅νasin(ωt)+μnCox2LW⋅[νasin(ωt)]2idnonlinerity
当小信号幅值不够大时,非线性段可忽略,所以:
I d = I D + i d V o u t = V D D − I d R D = ( V D D − I D R D ) − i d R D = V O U T + ν o u t ν o u t = − i d R D = − [ μ n C o x W L ( V B − V T H ) ] ⋅ R D ⋅ ν a sin ( ω t ) 增益 \begin{aligned}I_d=I_D+i_d&\quad V_{out}=V_{DD}-I_dR_D=(V_{DD}-I_DR_D)-i_dR_D\\&\quad=V_{OUT}+\nu_{out}\\&\begin{aligned}\nu_{out}=-i_dR_D=-[\mu_nC_{ox}\frac{W}{L}(V_B-V_{TH})]\cdotp R_D\cdotp\nu_a\sin(\omega t)\end{aligned}\\ &\qquad\qquad\qquad\qquad\qquad\qquad \textcolor{red}{增益}\end{aligned} Id=ID+idVout=VDD−IdRD=(VDD−IDRD)−idRD=VOUT+νoutνout=−idRD=−[μnCoxLW(VB−VTH)]⋅RD⋅νasin(ωt)增益
ν i n = ν a sin ( ω t ) ν o u t = − i d R D = − [ μ n C o x W L ( V B − V T H ) ] ⋅ R D ⋅ ν a sin ( ω t ) 跨导 g m \begin{aligned}\nu_{in}&=\nu_a\sin(\omega t)\\\nu_{out}&=-i_dR_D=-[\mu_nC_{ox}\frac{W}{L}(V_B-V_{TH})]\cdotp R_D\cdot\nu_a\sin(\omega t)\\&\qquad\qquad\qquad\qquad\qquad \textcolor{red}{跨导g_m}\end{aligned} νinνout=νasin(ωt)=−idRD=−[μnCoxLW(VB−VTH)]⋅RD⋅νasin(ωt)跨导gm
g m = ∂ I D ∂ V G S ∣ V D S = c o n s t a n t V G S 对 I D 的控制能力 I D = μ n C o x 2 W L ( V G S − V T H ) 2 g m = μ n C o x W L ( V G S − V T H ) = 2 μ n C o x W L I D = 2 I D V G S − V T H \begin{aligned}g_m&=\frac{\partial I_D}{\partial V_{GS}}|V_{DS}=constant\qquad V_{GS}对I_{D}的控制能力\\I_D&=\frac{\mu_nC_{_{ox}}}{2}\frac{W}{L}(V_{_{GS}}-V_{_{TH}})^2\\g_m& =\mu_{n}C_{ox}\frac{W}{L}(V_{GS}-V_{TH}) \\ &=\sqrt{2\mu_{n}C_{ox}\frac{W}{L}I_{D}} \\ &=\frac{2I_{D}}{V_{GS}-V_{TH}}\end{aligned} gmIDgm=∂VGS∂ID∣VDS=constantVGS对ID的控制能力=2μnCoxLW(VGS−VTH)2=μnCoxLW(VGS−VTH)=2μnCoxLWID=VGS−VTH2ID
W / L , I D , V G S − V T H W/L,I_D,V_{GS}-V_{TH} W/L,ID,VGS−VTH三者中只有两个是独立的,任一个可由另外两个推导