- 参考:用Cadence Virtuoso IC617仿真工艺库参数 https://blog.csdn.net/weixin_44115643/article/details/119062516
图中s和d接反了,导致计算错误,我根据电路图仿真重新计算一下,以下结果都是我按卡西欧计算器按出来的
PMOS计算过程
V S G = 0.8 V , V S D = 1 V , I D S = 6.4186 μ A V_{SG}= 0.8V, V_{SD} = 1V, I_{DS} = 6.4186 \mu A VSG=0.8V,VSD=1V,IDS=6.4186μA
V S G = 0.8 V , V S D = 1.5 V , I D S = 6.9392 μ A V_{SG}= 0.8V, V_{SD} = 1.5V, I_{DS} = 6.9392 \mu A VSG=0.8V,VSD=1.5V,IDS=6.9392μA
V S G = 1 V , V S D = 1 V , I D S = 15.273 μ A V_{SG}= 1V, V_{SD} = 1V, I_{DS} = 15.273 \mu A VSG=1V,VSD=1V,IDS=15.273μA
V S G = 1 V , V S D = 1.5 V , I D S = 16.258 μ A V_{SG}= 1V, V_{SD} = 1.5V, I_{DS} = 16.258 \mu A VSG=1V,VSD=1.5V,IDS=16.258μA
MOSFET电流方程
I D S = 1 2 μ p C o x W L ( V G S − ∣ V T p ∣ ) 2 ( 1 + λ p V D S ) I_{DS} = \frac{1}{2} \mu_p C_{ox} \frac{W}{L} \left( V_{GS} - |V_{Tp}| \right)^2 (1 + \lambda_p V_{DS}) IDS=21μpCoxLW(VGS−∣VTp∣)2(1+λpVDS)
K p = μ p C o x K_p = \mu_p C_{ox} K