• Program flash memory for vector space and code store
• For FlexNVM devices: FlexNVM for data store and additional code store
• For FlexNVM devices: FlexRAM for high-endurance data store or traditional RAM
• For program flash only devices: Programming acceleration RAM to speed flash programming
FTFE模块包含一个存储器控制器可以执行指令来刷新flash存储器内容。擦除是1,编程是0.只能由1变为0.
在编程之前flash存储器的状态必须是擦除状态。
每个块或者sector的立即再擦除是在factory编程之前,来保证完获得整数据保持能力。
30.1.1.1 Program Flash Memory Features
sector 大小是4KB
Program flash protection scheme prevents accidental program or erase of stored data
对于包含FlexNVM memory的设备: Read access to one program flash block is possible while programming or erasing data in another program flash block, data flash block, or FlexRAM
30.1.1.2 FlexNVM memory features
When FlexNVM is partitioned for data flash memory:
sector大小是4KB
Automated, 内置 program and erase algorithms with verify
30.1.1.4 FlexRAM 特征
Memory that can be used as traditional RAM or as high-endurance EEPROM storage
• 最多16 Kbytes of FlexRAM 配置 for EEPROM or traditional RAM operations
支持 FlexRAM aligned writes of 1, 2, or 4 bytes at a time
30.1.3 Glossary
Endurance — 次数 that a flash memory location can be erased and reprogrammed.
FCCOB (Flash Common Command Object) — A group of flash registers that are used to pass command, address, data, and any associated parameters to the memory controller in the FTFE module.
IFR — 非易失信息寄存器 found in each flash block, separate from the main memory array.
NVM Normal Mode — An NVM mode that provides basic user access to FTFE resources.
NVM Special Mode — An NVM mode enabling external, off-chip access to the memory resources in the FTFE module.
Program flash sector