NAND 科普文章

Field                                           Description

Package(Device)                       封装好的芯片, 多层组成闪存颗粒, 每个Package 2 channels; 2/4/8 die

Channel                                     channel 表示有几组ALE、CLE、IO[7:0]、DQS、RE、WE、WP信号线。

                                                   每channel 4CE(1024G) / 2CE(512G) / 1CE(256G)

Target(chip/CE)                       对应一个CE, 独立片选, 单独寻址

Die(Lun)                                    晶圆切割最小单元, 有1个或多个Plane，主流的4个plane，个别厂家能做到6个plane。

Plane                                        有独立Page/Cache寄存器,496 Blocks

Block                                        擦除最小单元,目前一个Block可以有许多 pages (每个厂家数据可能不同，比如2304 pages)。

Page                                          Program,Read最小单元, 现在主流3D TLC NAND一个page 16KB+2KB。           

                                                 1个page共用一根word line。

 一刀 文献摘录-NAND 系列文章  一刀 - 知乎 (zhihu.com)

文献摘录-NAND Structure1 ~ 7

文献摘录-NAND-Characterization-1 - 知乎 (zhihu.com)

文献摘录-NAND ECC

Controller Technologies for Managing 3D NAND Flash Memories  FMS2017_ForumE22_Haratsch (flashmemorysummit.com)

 

 

 

 

 NAND Flash Media Management Algorithms  

NAND Flash Media Management Algorithms (flashmemorysummit.com)

 

 

 Improving NAND Endurance by Dynamic Program and Erase Scaling

(rev1) Improving NAND Endurance by Dynamic Program and Erase Scaling.dvi (usenix.org)

文献摘录-NAND Algorithm-2 - 知乎 (zhihu.com)

Enabling 3D QLC NAND flash

Title of Presentation (flashmemorysummit.com)