sdevice

File{
Grid = “@tdr@”
Parameter = “@parameter@”
Plot = “@tdrdat@”
Current = “@plot@”
Output = “@log@”
}

Electrode{
{Name=“drain” Voltage= 0 Resist=1e11}
{Name=“source” Voltage= 0}
{Name=“gate” Voltage= 0 material= PolySi(N)}
}

Physics {
Fermi
Recombination (
SRH(DopingDep TempDep)
Auger
Avalanche(OkutoCrowell GradQuasiFermi)
)

	Aniso (
		eMobilityFactor (Total) = 0.83
		hMobilityFactor (Total) = 1.00
		Avalanche
 	      )
      
	Mobility ( 
		DopingDep 
		HighFieldSaturation
		Enormal(IALMob InterfaceCharge)
		IncompleteIonization
            )

	IncompleteIonization (
		Split (
			Doping = "NitrogenConcentration"
			Weights = (0.5 0.5)
		)
	)
		
	EffectiveIntrinsicDensity (
		*BandGapNarrowing(oldSlotboom NoFermi) 
		N