Synopsys Sentaurus TCAD 学习记录一 仿真trench mosfet Part 1

用Sprocess 仿真NMOS工艺流程

## NMOS

math coord.ucs

pdbSet grid Adaptive 1
pdbSet Oxide Grid perp.add.dist 2e-7
pdbSet Silicon Grid Remove.Dist 3e-8
pdbSet Grid NativeLayerThickness 1.5e-7

## x line verticle direction
line x location= 0.0 spacing= 0.5 tag= top
line x location= 5.0 spacing= 1.0 
line x location= 10.0 spacing= 1.0 tag= bottom

## y line horizontal direction
line y location= 0.0 spacing= 0.1 tag= left
line y location= 0.4 spacing= 0.1 tag= right

## substrate definition and initialzation
region Silicon xlo= top xhi= bottom ylo= left yhi= right substrate
init Silicon field= Phosphorus concentration= 5.85e19<cm-3> wafer.orient= 100

struct tdr= n@node@_NMOS1

AdvancedCalibration

## mesh strategy
mgoals accuracy= 1e-4
grid set.normal.growth.ratio.2d= 1.5 set.min.normal.size= 5<nm>
grid remesh

## deposit epi
deposit Silicon type= isotropic thickness= 3.56 \
species= Phosphorus concentration= 5.05e16

struct tdr= n@node@_NMOS2

## pad oxidation
diffuse temperature= 900<C> time= 8<min> H2O

select z= 1
layers

## hardmask dep
deposit oxide thickness= 220<nm> isotropic

struct tdr= n@node@_NMOS3

## refine before trench etch

refinebox name= trench_gox  min= {-3.6 -1} max= {-2.5 0.15} \
xrefine= {0.01} yrefine= {0.01} Silicon add

## trench etch
mask name= m_trench left= -1 right= 0.085 negative 
etch oxide anisotropic mask= m_trench etchstop= Silicon
etch Silicon type= trapezoidal thickness= 0.975 angle= 89

struct tdr= n@node@_NMOS4

## round corner
etch Silicon isotropic time= 1 rate= 0.03 

strip oxide

struct tdr= n@node@_NMOS5

## sac oxide
diffuse temperature= 1050<C> time= 1.5<min> H2O

struct tdr= n@node@_NMOS6

strip oxide

## gate oxidation
diffuse temperature= 950<C> time= 1.8<min> H2O

struct tdr= n@node@_NMOS7

## poly gate deposition
deposit PolySilicon type= isotropic thickness= 0.9 \
temperature= 580 species= Phosphorus concentration= 1.0e20

struct tdr= n@node@_NMOS8

## poly etch
etch PolySilicon type= isotropic thickness= 0.92

## poly ann
temp_ramp name= ramp_poly time= 35<min> temperature= 700<C> ramprate= 10<C/min> O2
temp_ramp name= ramp_poly time= 60<min> temperature= 1050<C> 
temp_ramp name= ramp_poly time= 35<min> temperature= 1050<C> t.final= 700<C>
diffuse temp.ramp= ramp_poly

struct tdr= n@node@_NMOS9

refinebox clear
refinebox name= Global Adaptive Silicon \
refine.min.edge= {0.01 0.01} refine.max.edge= {1.0 1.0} \
abs.error= {Boron= 1e15 Arsenic= 5e16 Phosphorus= 5e15} \
rel.error= {Boron= 0.3 Arsenic= 0.3  Phosphorus= 0.3} \
max.dose.error= {Boron= 1e10 Arsenic= 1e10  Phosphorus= 1e10}
grid remesh

## pwell imp
implant Boron dose= 7.3e12 energy= 140 tilt= 0 rotation= 22
implant Boron dose= 7.3e12 energy= 30 tilt= 0 rotation= 22

## pwell ann
temp_ramp name= ramp_pwell time= 30<min> temperature= 1000<C> 
diffuse temp.ramp= ramp_pwell

struct tdr= n@node@_NMOS10

## nwell imp
implant Arsenic dose= 5e15 energy= 60 tilt= 0 rotation= 22

## nwell ann 
temp_ramp name= ramp_nwell time= 30<min> temperature= 950<C> 
diffuse temp.ramp= ramp_nwell

struct tdr= n@node@_NMOS11

## ct loop
deposit oxide type= fill coord= -4.2
diffuse temperature= 950<C> time= 30<min> 
mask name= m_ct segments= {0.375 0.4} negative
etch oxide anisotropic mask= m_ct etchstop= Silicon
etch Silicon type= trapezoidal thickness= 0.35 angle= 89
implant BF2 energy= 25 dose= 5e14 tilt= 0 rotation= 22
diffuse temperature= 800<C> time= 30<s> 

struct tdr= n@node@_NMOS12

## metal loop
deposit Aluminum isotropic thickness= 4<um>

struct tdr= n@node@_NMOS13

etch Aluminum cmp coord= -4.2

struct tdr= n@node@_NMOS14

transform reflect right

struct tdr= n@node@_NMOS

## end sprocess

最后生成的结构图