Synopsys Sentaurus TCAD 学习记录一仿真trench mosfet Part 3

最新推荐文章于 2024-09-16 20:12:46 发布

学习困难症

最新推荐文章于 2024-09-16 20:12:46 发布

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分类专栏： Sentaurus TCAD 文章标签：学习

本文链接：https://blog.csdn.net/qq_42736894/article/details/141899329

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根据前面生成的结构看一下BV和VTH

## tool sdevice
## Idvd
#setdep @node|Devmesh@

## input and output files
File {
   grid = "n@node|Devmesh@_final_fps.tdr"
   current = "@plot@"
   output = "@log@"
   plot = "@tdrdat@"
}

## electrode condition
Electrode {
   { Name="drain" Voltage=0 }
   { Name="source1" Voltage=0 }
   { Name="gate" Voltage=0 }
}

## physics models
Physics {
   Mobility(
       DopingDependence
       Enormal
       HighFieldSaturation
   )
   Recombination(
       SRH(DopingDep)
       Auger
       *Avalanche(GradQuasiFermi)
   )
   EffectiveIntrinsicDensity(oldSlotboom)
}

## math
Math {
   Extrapolate
   Iterations=20
   Notdamped=50
   Digits=5
   Number_of_threads=2
   ExitOnFailure
}

## solve
Solve {
   Coupled { Poisson }
   Coupled (Iterations=50 LineSearchDamping=1e-4 ) { Poisson Electron }
   Coupled { Poisson Electron Hole }

   ## sweep vd to a large value
   Quasistationary(
       InitialStep=1e-5 MinStep=1e-9 MaxStep=0.1
       Increment=1.5 Decrement=2
       Goal{ Name="drain" Voltage=5}
   ) {Coupled { Poisson Electron Hole }}

   NewCurrentFile="Idvg_"
   Quasistationary(
       InitialStep=1e-4 MinStep=1e-8 MaxStep=0.1
       Increment=1.5 Decrement=2
       Goal{ Name="gate" Voltage=5}
   ) {Coupled { Poisson Electron Hole }}
}