Synopsys Sentaurus TCAD 学习记录一仿真trench mosfet Part 2

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已于 2024-08-19 15:09:02 修改

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分类专栏： Sentaurus TCAD 文章标签：学习

于 2024-08-19 15:06:45 首次发布

本文链接：https://blog.csdn.net/qq_42736894/article/details/141325857

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Remesh 前面生成的结构，为后续的Device Simulation

#setdep @node|NMOSsprocess@

## remesh for device simulation
## import file
init tdr= n@node|NMOSsprocess@_NMOS

## line and refine clear
refinebox clear
line clear

## snmesh setting
grid Adaptive set.Delaunay.type= boxmethod \
set.min.normal.size= 0.01 \
set.normal.growth.ratio.2d= 1.5

pdbSet Grid AdaptiveField Refine.Abs.Error 1e37
pdbSet Grid AdaptiveField Refine.Rel.Error 1e10
pdbSet Grid AdaptiveField Refine.Target.Length 100

## global refinement
refinebox name= Global Adaptive \
refine.fields= {NetActive} def.max.asinhdiff= 0.3 \
refine.min.edge= {0.02 0.02} refine.max.edge= {1 0.1} \
all add

## trench region refinement
refinebox offsetting min.normal.size= 0.01 \
normal.growth.ratio= 1.5 \
interface.mat.pairs= {Silicon Oxide Oxide PolySilicon} \
offsetting.maxlevel= 3

## ct region refinement
refinebox name= ref_ct min.normal.size= 0.005 \
normal.growth.ratio= 1.5 \
interface.mat.pairs= {Silicon Aluminum} \
min= {-3.6 0.35} max= {-3.1 0.45}

grid remesh

## electrode definition
contact name= gate1 point x= -3.4 y= 0.1 !replace
contact name= gate2 point x= -3.4 y= 0.7 !replace
contact name= source1 point x= -3.5 y= 0.4
contact name= drain bottom Silicon
contact merge= {gate1 gate2} name= gate

## save tdr for device simulation
struct tdr= n@node@_final !gas