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PD - 94638A

HEXFET Power MOSFET

Applications

l

High Frequency Synchronous Buck

Converters for Computer Processor Power

l

High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

Benefits

l

Very Low RDS(on) at 4.5V V

GS

l

Ultra-Low Gate Impedance

l

Fully Characterized Avalanche Voltage

and Current

IRLR7843

IRLU7843

®

Qg

34nC

V

DSS

30V

R

DS(on)

max

3.3m

:

D-Pak

IRLR7843

I-Pak

IRLU7843

Absolute Maximum Ratings

Parameter

V

DS

V

GS

I

D

@ T

C

= 25°C

I

D

@ T

C

= 100°C

I

DM

P

D

@T

C

= 25°C

P

D

@T

C

= 100°C

T

J

T

STG

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

GS

@ 10V

Continuous Drain Current, V

GS

@ 10V

Pulsed Drain Current

Max.

30

± 20

161

620

140

71

0.95

-55 to + 175

300 (1.6mm from case)

Units

V

g

Maximum Power Dissipation

g

Maximum Power Dissipation

f

113

f

A

W

W/°C

°C

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter

R

θJC

R

θJA

R

θJA

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

Typ.

Max.

1.05

50

110

Units

°C/W

gÃ

–––

–––

–––

Notes

through

are on page 11

www.irf.com

1

12/30/03

IRLR/U7843

Static @ T

J

= 25°C (unless otherwise specified)

Parameter

BV

DSS

∆ΒV

DSS

/∆T

J

R

DS(on)

V

GS(th)

∆V

GS(th)

/∆T

J

I

DSS

I

GSS

gfs

Q

g

Q

gs1

Q

gs2

Q

gd

Q

godr

Q

sw

Q

oss

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q

gs2

+ Q

gd

)

Output Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min. Typ. Max. Units

30

–––

–––

–––

1.5

–––

–––

–––

–––

–––

37

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

19

2.6

3.2

–––

-5.4

–––

–––

–––

–––

–––

34

9.1

2.5

12

10

15

21

25

42

34

19

4380

940

430

–––

–––

3.3

4.0

2.3

–––

1.0

150

100

-100

–––

50

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

pF

nC

nC

V

Conditions

V

GS

= 0V, I

D

= 250µA

mV/°C Reference to 25°C, I

D

= 1mA

mΩ V

GS

= 10V, I

D

= 15A

V

V

GS

= 4.5V, I

D

V

DS

= V

GS

, I

D

= 250µA

e

= 12A

e

mV/°C

µA V

DS

= 24V, V

GS

= 0V

nA

S

V

DS

= 24V, V

GS

= 0V, T

J

= 125°C

V

GS

= 20V

V

GS

= -20V

V

DS

= 15V, I

D

= 12A

V

DS

= 15V

V

GS

= 4.5V

I

D

= 12A

See Fig. 16

V

DS

= 15V, V

GS

= 0V

V

DD

= 15V, V

GS

= 4.5V

e

ns

I

D

= 12A

Clamped Inductive Load

V

GS

= 0V

V

DS

= 15V

ƒ = 1.0MHz

Avalanche Characteristics

E

AS

I

AR

E

AR

Parameter

Single Pulse Avalanche Energy

Avalanche Current

Ã

d

Repetitive Avalanche Energy

–––

–––

–––

–––

–––

–––

–––

–––

39

36

Typ.

–––

–––

–––

Max.

1440

12

14

Units

mJ

A

mJ

Diode Characteristics

Parameter

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

Min. Typ. Max. Units

161

f

620

1.0

59

54

V

ns

nC

A

Conditions

MOSFET symbol

showing the

integral reverse

p-n junction diode.

T

J

= 25°C, I

S

= 12A, V

GS

= 0V

T

J

= 25°C, I

F

= 12A, V

DD

= 15V

di/dt = 100A/µs

Ã

e

e

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

2

www.irf.com

IRLR/U7843

1000

VGS

TOP

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM 2.5V

1000

ID, Drain-to-Source Current (A)

100

ID, Drain-to-Source Current (A)

100

VGS

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM 2.5V

TOP

10

2.5V

10

1

2.5V

20µs PULSE WIDTH

Tj = 25°C

0.1

0.1

1

10

100

20µs PULSE WIDTH

Tj = 175°C

1

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

Fig 1.

Typical Output Characteristics

Fig 2.

Typical Output Characteristics

1000

2.0

RDS(on) , Drain-to-Source On Resistance

ID, Drain-to-Source Current

(Α

)

ID = 30A

VGS = 10V

100

10

T J = 25°C

(Normalized)

T J = 175°C

1.5

1.0

1

2.0

3.0

VDS = 15V

20µs PULSE WIDTH

4.0

5.0

0.5

-60 -40 -20 0

20 40 60 80 100 120 140 160 180

VGS , Gate-to-Source Voltage (V)

T J , Junction Temperature (°C)

Fig 3.

Typical Transfer Characteristics

Fig 4.

Normalized On-Resistance

vs. Temperature

www.irf.com

3

IRLR/U7843

100000

12

VGS, Gate-to-Source Voltage (V)

VGS = 0V,

f = 1 MHZ

Ciss = C gs + Cgd, C ds

Crss = C gd

Coss = Cds + Cgd

SHORTED

ID= 12A

10

8

6

4

2

0

VDS= 24V

VDS= 15V

C, Capacitance (pF)

10000

Ciss

1000

Coss

Crss

100

1

10

100

0

20

40

60

80

VDS, Drain-to-Source Voltage (V)

Q G Total Gate Charge (nC)

Fig 5.

Typical Capacitance vs.

Drain-to-Source Voltage

Fig 6.

Typical Gate Charge vs.

Gate-to-Source Voltage

1000.0

10000

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100.0

T J = 175°C

10.0

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

1000

100

100µsec

10

Tc = 25°C

Tj = 175°C

Single Pulse

1

0.1

1.0

10.0

1msec

10msec

100.0

1000.0

1.0

T J = 25°C

VGS = 0V

0.1

0.0

0.5

1.0

1.5

VSD, Source-toDrain Voltage (V)

VDS , Drain-toSource Voltage (V)

Fig 7.

Typical Source-Drain Diode

Forward Voltage

Fig 8.

Maximum Safe Operating Area

4

www.irf.com

IRLR/U7843

160

LIMITED BY PACKAGE

2.5

VGS(th) Gate threshold Voltage (V)

ID , Drain Current (A)

120

2.0

ID = 250µA

1.5

80

1.0

40

0.5

0

25

50

75

100

125

150

175

T C , Case Temperature (°C)

0.0

-75 -50 -25

0

25

50

75

100 125 150 175

T J , Temperature ( °C )

Fig 9.

Maximum Drain Current vs.

Case Temperature

Fig 10.

Threshold Voltage vs. Temperature

10

Thermal Response ( Z thJC )

1

D = 0.50

0.20

0.10

0.05

0.02

0.01

τ

J

τ

J

τ

1

τ

1

R

1

R

1

τ

2

R

2

R

2

τ

C

τ

2

τ

0.1

Ri (°C/W)

0.5084

0.5423

τi

(sec)

0.000392

0.011108

0.01

Ci=

τi/Ri

Ci i/Ri

SINGLE PULSE

( THERMAL RESPONSE )

0.001

1E-006

1E-005

0.0001

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11.

Maximum Effective Transient Thermal Impedance, Junction-to-Case

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5