这是Silvaco victory process第一个初始化语句
INIT
This statement is used to initialize a simulation run. A simulation run can either be initialized by
loading a previously saved simulation structure or by setting up the simulation domain and creating
a planar initial structure. The INIT statement only initiates a new simulation run. To load a
previously saved simulation structure use the LOAD statement.
Syntax
INIT MATERIAL=<Name> DEPTH=<Value> GASHEIGHT=<Value> [SURFACE.Z=<Value>]
( ( [ FROM=<Value or ListOfValues> TO=<Value or ListOfValues> ]
[ LAYOUT=<Name> AT=<Value or ListOfValues> ] ) ||
( LAYOUT=<Name> [ CELL=<Name> ] [ MAPFILE=<Name> ] [ RULEFILE=<Name> ]
[PADDING=<Value>] [PADDING.XM=<Value>] [PADDING.XP=<Value>]
[PADDING.YM=<Value>] [PADDING.YP=<Value>]
[SHIFT.X=<Value>] [SHIFT.Y=<Value>]
( QUARTER.XMYM || QUARTER.XMYP || QUARTER.XPYM ||
QUARTER.XPYP ||
HALF.XM || HALF.XP || HALF.YM || HALF.YP )
( [ MOVELABEL.NAME=<Name> MOVELABEL.POS=<Type> ] )
[DONOTCUTLAYOUT] )
[ RESOLUTION=<Value or ListOfValues> ] [ MESHDEPTH=<Number> ||
REFINEMENTRATIO = <ListOfValues> ]
[ DOPMESHFACTOR=<Value> ]
[ SUB.TYPE=<Name> ] [ SUB.ORI=<Name> ] [ SUB.ROT=<Value> ]
[ SUB.MISCUT.PHI=<Value> ] [SUB.MISCUT.THETA=<Value> ]
( [ DOPANTS=<Name or ListOfNames> && DOPINGVALUES=<Value or ListOfValues> ] ||
[ DOPANTS=<Name> && RESISTIVITY=<Value> ] ||
[ <BASICDOPANT> && RESISTIVITY=<Value> ] ||
[ C.<BASICDOPANT>=<Value> ] )
[ FLOW.DIM=<Name> ] [FLIP] [ FLIPTHICKNESS=<Value> ] [SEPARATE.LAYERS] )
( [ X.COMP=<Value> ] [ Y.COMP=<Value> ] [ Z.COMP=<Value> ] )
[GR.SIZE]
[ COMP.DOPING ]
Parameter Type Default Units Supported only in
<BASICDOPANT> None
AT Character um
CELL Character The first cell
in the GDSII file
DEPTH Real um process mode
C.<BASICDOPANT> Real 1/cm3
COMP.DOPING Logical ON/TRUE
DONOTCUTLAYOUT Logical OFF/FALSE
DOPANTS List of Characters
DOPINGVALUES List_of_Real 1/cm3
DOPMESHFACTOR Real 1 process mode
FLIP Logical OFF/FALSE
FLIPTHICKNESS Real um
FLOW.DIM Character automatic process mode
FROM List_of_Real um
GASHEIGHT Real um
GR.SIZE Real 0 um
HALF.XM Logical OFF/FALSE
HALF.XP Logical OFF/FALSE
HALF.YM Logical OFF/FALSE
HALF.YP Logical OFF/FALSE
LAYOUT Character None
MAPFILE Character
MATERIAL Character
MESHDEPTH Integer 2 process mode
MOVELABEL.NAME Character cell mode
MOVELABEL.POS Character cell mode
PADDING Real 0 um
PADDING.XM Real 0 um
PADDING.XP Real 0 um
PADDING.YM Real 0 um
PADDING.YP Real 0 um
QUARTER.XMYM Logical OFF/FALSE
QUARTER.XMYP Logical OFF/FALSE
QUARTER.XPYM Logical OFF/FALSE
QUARTER.XPYP Logical OFF/FALSE
REFINEMENTRATIO List of Integers 4 process mode
RESISTIVITY Real Ohm
RESOLUTION List_of_Real um process mode
RULEFILE Character
SEPARATE.LAYERS Logical OFF/FALSE
SHIFT.X Real 0.0 um
SHIFT.Y Real 0.0 um
SUB.MISCUT.THETA Real depends on material
SUB.MISCUT.PHI Real depends on material
SUB.ORI Character "100"
SUB.ROT Real 0 degree
SUB.TYPE Character "diamond"
SURFACE.Z Real 0.0 um process mode
TO List_of_Real um
X.COMP Real
Y.COMP Real
Z.COMP Real
Description
Parameter Description
<BASICDOPANT> One of the following :
Aluminium, Antimony, Arsenic, Boron, Hydrogen, Indium, Nitrogen, Phosphorus
AT Selects a 2D cross-section within the mask (see LAYOUT parameter) or a 1D point
within the mask for simulation.
You can perform a 2D simulation in a 2D cross-section of a mask by specifying the
FROM, TO and AT parameters in the following manner:
FROM=<x_min> TO=<x_max> AT=<y_position_in_the_mask> FLOW.DIM=2D_XZ
or
FROM=<y_min> TO=<y_max> AT=<x_position_in_the_mask> FLOW.DIM=2D_YZ
The value passed to the AT parameter is the x- or y-coordinate of the plane within the
mask where the 2D simulation will be performed. You must use FROM and TO parameters
to indicate 2D simulation. If 2D simulation is chosen, then by default the value of
FLOW.DIM parameter is 2D_XZ and AT refers to y-coordinate within the mask. In order to
simulate the 'vertical' cut through the mask you should explicitly set FLOW.DIM=2D_YZ
You can perform a 1D simulation at a 1D cut-point of a mask by only specifying the
AT parameter in the following manner:
AT="<xpos>, <ypos>"
<xpos> and <ypos> are the x and y-coordinate of the point within the mask where the
1D simulation will be performed. If you define a 1D simulation by AT in this manner,
the FROM and TO parameters must not be used. Otherwise, it will cause an error.
You must use the AT parameter together with the LAYOUT parameter.
C.<BASICDOPANT> You can start the simulation with a doped wafer. The parameter C.<BASICDOPANT>
specifies the concentration of a dopant inside the wafer. You can specify multiple
C.<BASICDOPANT> parameters. <BASICDOPANT> is one of the following :
Aluminium, Antimony, Arsenic, Boron, Hydrogen, Indium, Nitrogen, Phosphorus
CELL A GDSII mask file usually contains several cells. Victory Process can only load one
of those cells. The CELL parameter is used to select the cell that will be loaded
into the internal mask set of Victory Process. If you do not specify the CELL
parameter, the first cell from the GDSII file will be loaded. The CELL parameter
will only have an effect if a GDSII file is loaded. If a mask file in .lay format is
loaded, the CELL parameter will be ignored.
COMP.DOPING By setting COMP.DOPING=OFF no impurities which are related to the composition will be added.
Important : You have to keep in mind that doping diffusion will
not work properly when this parameter is used. This means you should not use this
parameter in combination with DIFFUSE and EPITAXY statements.
DEPTH Determines the depth of the substrate material. The bottom of the simulation domain
is filled up to the thickness specified by the DEPTH parameter with substrate
material while the rest of the domain is filled with "Gas". The total extension of
the simulation domain is DEPTH + GASHEIGHT.
DONOTCUTLAYOUT By default loaded mask layout is cut to fit the simulation domain size. When this flag is
set to TRUE the mask layout remains uncut. It may be useful when you want to start the
simulation with only half or quarter of the symmetrical structure and to switch to the full
structure using mirroring later in the deck (e.g. at the export stage). Without this flag
informatin about electrodes outside the initial simulation domain will be lost.
DOPANTS You can start the simulation with a doped wafer. The parameter DOPANTS
specifies the names of the dopants inside the wafer. The parameter DOPANTS always
has to be specified together with the parameter DOPINGVALUES. You can pass several
names to the parameter DOPANTS, whereby the names must be separated by "\t", " ", or
",". The order of the names in the DOPANTS string must correspond to the order of
the values in the DOPINGVALUES string.
DOPINGVALUES You can start the simulation with a doped wafer. The parameter DOPINGVALUES
specifies the concentration of the dopant (specified by means of the parameter
DOPANTS) inside the wafer. The parameter DOPINGVALUES always has to be specified
together with the parameter DOPANTS. You can pass several names to the parameter
DOPINGVALUES, whereby the names must be separated by "\t", " ", or ",". The order of
the names in the DOPINGVALUES string must correspond to the order of the values in
the DOPANTS string.
DOPMESHFACTOR Victory Process uses different meshes to represent the geometry and to store
volumetric data (like doping or stress). By default, the resolution of the mesh,
which is used to represent the volumetric data, is the same as the base mesh
resolution of the mesh to represent the geometry (see parameter RESOLUTION). The
parameter DOPMESHFACTOR is used to obtain a different resolution for the volumetric
mesh. If the parameter DOPMESHFACTOR is specified, the element size of the
volumetric mesh resolution is multiplied by the factor supplied as an argument to
the parameter DOPMESHFACTOR. A value less than 1 reduces the number of mesh points
in the volumetric mesh, while a value larger than 1 increases the number of mesh
points in the volumetric mesh. The number of mesh elements in each direction is
multiplied by this factor to total number of mesh elements and is multiplied by
DOPMESHFACTOR^3. For example, a DOPMESHFACTOR of 2 means that the mesh is twice as
fine in x, y, and z direction and that the total number of mesh elements is 8 times
the number of mesh elements in the base mesh, which represents the geometry.
FLIP If used, the initial structure will be prepared for the flipping operation
at certain stage of the simulation. In this case, the structure will consist of
the initial material layer MATERIAL with thickness DEPTH, gas layer of thickness
GASHEIGHT, and another gas layer of the same thickness below the material layer.
This second gas layer is named 'gasbackside' and will provide enough computational
space for simulations to continue after flipping. If FLIP is not present, the
structure will consist of material and top gas layer only. Any calls of the FLIP
statement will produce an error.
FLIPTHICKNESS When FLIP is specified, a gas layer below the material layer will have a thickness
GASHEIGHT; in some simulations, we need to have thicker gas layer below material,
and it is specified by this parameter. If FLIPTHICKNESS <= GASHEIGHT, this
parameter and its effects are ignored.
FLOW.DIM Determines the operational dimension mode of Victory Process to the start the
simulation with. The following operational modes are supported:
1D
2D_XZ
2D_YZ
3D
If you do not specify an operational dimension mode Victory Process will
automatically start with a 1D simulation and will switch over to 2D and 3D whenever
necessary according to etching or deposition conditions.
FROM Specifies the extent of a 3D or 2D simulation domain.
When you intend to perform a 2D simulation, you must specify the simulation domain
via the FROM and TO parameters, whereby you pass a single value to the parameters
FROM and the TO.
.) FROM determines the x-coordinate of the left side of the simulation domain.
.) TO determines the x-coordinate of the right side of the simulation domain.
If you choose to perform a simulation in 2D_YZ mode (see the FLOW.DIM parameter),
FROM and TO specify the y-limits of the simulation domain. If you also use a mask in
the simulation, then also use the AT parameter to specify where (x- or y-position,
depending on value of FLOW.DIM parameter) the
simulation domain is located within the mask.
For a 3D simulation, FROM and TO are supplied with pairs of values, defining the
simulation domain's minimum x and y coordinates (FROM parameter) and domain's
maximum x and y coordinates (TO parameter).
When you specify neither the FROM and TO parameters nor the LAYOUT parameter you
initialize a 1D simulation.
GASHEIGHT Describes the height of the gas above the substrate material. You will find the
surface of the substrate material at position 0 and substrate material in positive
direction (as in Athena) and "gas" material in negative direction (as in
Athena). When the simulation domain is automatically set with a mask file (see
LAYOUT parameter), set the height of the gas region within the simulation domain
above the wafer with the GASHEIGHT parameter.
GR.SIZE Specifies grain size in deposited polysilicon layer. This parameter is used only when GRAINBASED
model is specified in the METHOD statement.
HALF.XM Declares that only one half of the mask layout will be used as the simulation
HALF.XP domain.
HALF.YM HALF.XM: negative x-domain half
HALF.YP HALF.XP: positive x-domain half
HALF.YM: negative y-domain half
HALF.YP: positive y-domain half
When applying one of those parameters, you have to be aware that all mask layers
contained with the mask file selected via the LAYOUT parameter should also satisfy
this symmetry. If you consider a half of the structure, the padding is not
applied to the "cut off" sides.
LAYOUT The name of the mask file that will be loaded. You can load mask files in .lay
format and GDSII format. Mask files in .lay format can be created by MaskViews or by
Victory Process. If the mask file is not located in the directory where Victory
Process or DeckBuild was started, you must specify the relative of absolute path (in
Unix format) to the mask file.
If you do not specify the parameters FROM and TO, the size of the simulation domain
is set according to the enclosing bounding box of the mask layers contained in the
mask file. You can adjust the simulation domain with the following parameters:
PADDING, PADDING.XM, PADDING.XM, PADDING.YM, PADDING.YP, QUARTER.XMYM,
QUARTER.XMYP, QUARTER.XPYM, QUARTER.XPYP, HALF.XM, HALF.XP, HALF.YM
and HALF.YP.
MAPFILE Specifies the name of the layer-map file that is used to translate numeric mask
names of the GDSII file into names that are easier to understand. The translated
names are assigned to the masks in the internal mask set of Victory Process. The
format of the layer-map file specified as an argument of the MAPFILE parameter is
identical to the file used by CAD vendors to write GDSII files. Each row of the
layer-map file contains the following:
layer name
layer purpose
GDSII layer number
GDSII audiotape
If you load a mask file in GDSII format and do not specify the MAPFILE parameter,
the names of the masks in the mask set will be defined according to the following
rule:
L#<layer_number>.<audiotape>
or
L#<layer_number>
if the <audiotape> is zero.
For example, layer 15 audiotape 2 will match the mask with the name "L#15.2" in the
internal mask set of Victory Process, or layer 15 audiotape 0 will match the mask
with the name "L#15" in the internal mask set of Victory Process.
MATERIAL When the structure is initialized by the INIT statement, it consists of only one
material. The name of this material is specified by means of the parameter
MATERIAL. In terms of process technology, this can be considered as the wafer
material. Only single material structures can be created by the INIT
statement. When you intend to simulate technology based on SOI or Si-SiGe wafers,
you have to create the material stack within Victory Process, or you just simulate
the top wafer material where the active devices are located.
MESHDEPTH Determines how many levels of refinement can be used by the automatic and the manual
mesh refinement procedures. The parameter MESHDEPTH together with the mesh
resolution (RESOLUTION) specify the maximum achievable resolution of the mesh. The
maximum achievable resolution is the resolution multiplied by 4(n-1) with n being
the value assigned to MESHDEPTH. You must bear in mind that this is only the
resolution to resolve geometrical corners. Material layers with a thickness down to
1/100 of this achievable resolution can be treated successfully by Victory
Process. For instance, if
RESOLUTION="0.01, 0.01, 0.01" MESHDEPTH=2,
the geometrical resolution around corners will be 2.5 nm and planar layer with a
thickness down to 0.25 A can be handled properly. The parameter DEPTH is mutually
exclusive with the parameter REFINEMENTRATIO.
MOVELABEL.NAME Together with the parameter MOVELABEL.POS this parameter instructs Victory Process
to move a label or an electrode of the mask from outside the simulation domain into the
simulation domain. This obviously only makes sense if the simulation domain is set
explicitly by means of the FROM and TO parameters and is smaller than the domain of the
mask. The parameter MOVELABEL.NAME selects the electrode which shall be moved.
Note : You can use multiple
MOVELABEL.NAME=<Name> and MOVELABEL.POS=<Type>
parameter pairs within one INIT statement
MOVELABEL.POS Together with the parameter MOVELABEL.NAME this parameter instructs Victory Process
to move a label or an electrode of the mask from outside the simulation domain into the
simulation domain. This obviously only makes sense if the simulation domain is set
explicitly by means of the FROM and TO parameters and is smaller than the domain of the
mask. The parameter MOVELABEL.POS determines the new position of the electrode.
MOVELABEL.POS can take one of the following arguments
LEDGE, REDGE, and LREDGES (or RLEDGES) moves the label or electrode
to the left, right or left and right edges.
TEDGE, BEDGE, and TBEDGES (or BTEDGES) moves the label or electrode
to the top, bottom, or top and bottom edges.
INBOX moves the label or electrode inside the box.
Note : You can use multiple
MOVELABEL.NAME=<Name> and MOVELABEL.POS=<Type>
parameter pairs within one INIT statement
PADDING Determines the padding of the simulation domain around the mask, which is loaded via
the LAYOUT parameter. To pad the simulation domain in all four directions, you can
use the PADDING parameter. It determines the padding in um.
PADDING.XM Determines the padding of the simulation domain around the mask, which is loaded via
PADDING.XP the PADDING.XM parameter. To pad the simulation domain individually in the various
PADDING.YM axis directions, you can use the parameters:
PADDING.YP PADDING.XM : pad negative x-domain side
PADDING.XP : pad positive x-domain side
PADDING.YM : pad negative Y-domain side
PADDING.YP : pad positive Y-domain side
They determines the padding in um. You can use parameters PADDING and PADDING.<Side>
together in a single statement, in which case the "global padding" (parameter
PADDING) will be overridden by the "side-specific" padding value.
QUARTER.XMYM Declares that only one quarter of the mask layout will be used as the simulation
QUARTER.XMYP domain :
QUARTER.XPYP QUARTER.XMYM : 1. quadrant
QUARTER.XPYM QUARTER.XMYP : 2. quadrant
QUARTER.XPYP : 3. quadrant
QUARTER.XPYM : 4. quadrant
When applying one of those parameters, you have to be aware that all mask layers
contained within the mask file selected should also satisfy this symmetry. If you
consider a quarter of the structure, the padding is not applied to the "cut off"
sides.
REFINEMENTRATIO The list of positive integers divided by symbols ' ', ',', or '\t'. Each number
represents refinement ratio between adjacent refinement levels. Total number or
refinement levels in this case is equal to number of elements in the list plus
one. The REFINEMENTRATIO parameter together with the mesh resolution (RESOLUTION)
specify the maximum achievable resolution of the mesh. The maximum achievable
resolution is the resolution divided by (ratio[0] * ratio[1] * ...), where ratio[i]
is the i-th element of REFINEMENTRATIO list. This is only the resolution to resolve
geometrical corners in process mode. Material layers with a thickness down to 1/100
of this achievable resolution can be treated successfully by Victory Process. For
instance, if
RESOLUTION="0.01, 0.01, 0.01" REFINEMENTRATIO="4, 4",
the geometrical resolution around corners will be 2.5 nm and planar layer with a
thickness down to 0.25 A can be handled properly. The parameter REFINEMENTRATIO is
mutually exclusive with the parameter MESHDEPTH.
RESISTIVITY You can start the simulation with a doped wafer. You can specify this initial doping
by means of the resistivity. Victory Process converts this resistivity into a doping
concentration using information from the material database (see section
<bulk><resistivity>). You must specify the parameter RESISTIVITY together with one
parameter <BASICDOPANT> or with the parameter DOPANTS.
Note : The parameter DOPANTS my only contain a single dopant with used together with
the parameter RESISTIVITY.
RESOLUTION Determines the resolution of the base geometry mesh in all three coordinate
directions. You can refine this mesh further by manual mesh refinement (see
REFINEGEOMESH statement) or by automatic refinement (see parameter MESHDEPTH). The
base mesh should not be too anisotropic (less than 2) to ensure proper accuracy of
the level-set algorithms applied to move the material interfaces. Typically, the
base mesh should contain not less than 30 mesh lines in each direction to sufficient
resolution. Conversely, it should not exceed 200 mesh lines to keep the memory
requirements within reasonable limits.
RULEFILE Specifies the name of the rule file that is used to manipulate the mask layers. For
example it can be used to define new masks using boolean operations with existing mask
layers.
SEPARATE.LAYERS Activates the mode that layers should be separated, even when they consist of the same
material
SHIFT.X Shift all layers of loaded mask layout along X axis by the value specified by this parameter.
SHIFT.Y Shift all layers of loaded mask layout along Y axis by the value specified by this parameter.
SUB.MISCUT.THETA The parameters SUB.MISCUT.PHI and SUB_MISCUT.THETA to INIT control the miscut
of the substrate. The default values for the miscut depend on the material :
Default miscut :
sic-4h : phi=90° theta=8°
sic-6h : phi=90° theta=4°
gan : phi=0° theta=0.5°
all other materials : phi=0° theta=0°
SUB.MISCUT.PHI The parameters SUB.MISCUT.PHI and SUB_MISCUT.THETA to INIT control the miscut
of the substrate. The default values for the miscut depend on the material :
Default miscut :
sic-4h : phi=90° theta=8°
sic-6h : phi=90° theta=4°
gan : phi=0° theta=0.5°
all other materials : phi=0° theta=0°
SUB.ORI Determines the crystal orientation of the wafer. You can choose from one of the
three crystal orientations for a diamond type crystal :
"100"
"110"
"111"
And one of the four crystal orientations for a hexagonal type crystal :
"0001"
"000-1"
"11-20"
"1-100"
Default orientation :
diamond substrate : <100>
hexagonal substrate : <0001>
SUB.ROT Determines the crystal orientation of the x-axis of the simulation domain and hence
the alignment of the mask with the substrate.
For diamond type crystal :
SUB.ROT=0 means that the x-axis of the simulation domain is aligned with the <100>
orientation of the silicon crystal. SUB.ROT=45 means that the x-axis of the simulation
domain is aligned with the <110> orientation of the silicon crystal.
For hexagonal type crystal :
Orientation "0001" :
This is SiC Si face
Rotation 0 deg means that :
the x axis of the simulation domain is orthogonal to an m-plane - <1-100>
the y axis of the simulation domain is orthogonal to an a-plane - <11_20>
Rotation 30 deg means that :
the x axis of the simulation domain is orthogonal to an a-plane - <11_20>
the y axis of the simulation domain is orthogonal to an m-plane - <1-100>
Orientation "000-1" :
This is SiC C face
Rotation 0 deg means that :
the x axis of the simulation domain is orthogonal to an m-plane - <1-100>
the y axis of the simulation domain is orthogonal to an a-plane - <11_20>
Rotation 30 deg means that :
the x axis of the simulation domain is orthogonal to an a-plane - <11_20>
the y axis of the simulation domain is orthogonal to an m-plane - <1-100>
Orientation "11-20" :
This is SiC a face
Rotation 0 deg means that :
the x axis of the simulation domain is orthogonal to an m-plane - <1-100>
the y axis of the simulation domain is orthogonal to an Si-plane - <0001>
Orientation "1-100" :
This is SiC m face
Rotation 0 deg means that :
the x axis of the simulation domain is orthogonal to an C-plane - <000-1>
the y axis of the simulation domain is orthogonal to an a-plane - <11_20>
SUB.TYPE Determines the lattice type of the crystal. You can choose from one of the two crystal types :
"diamond"
"hexagonal"
Victory Process takes the default value from the material database section :
<material><bulk><crystaltype>
The first crystaline material which appears within the simulation flow determines the
the crystal type.
SURFACE.Z Z coordinate of the initial substrate surface.
TO Defines one end of the simulation domain (see parameter FROM).
X.COMP For the deposition of a composite material, you can set the material composition with
Y.COMP the X.COMP, Y.COMP and Z.COMP parameter. The correspondence between elements, forming the material
Z.COMP and these parameters is set in the material database.
Examples
Initialize a new wafer for a 1D simulation
INIT MATERIAL="silicon" \
DEPTH=0.2 GASHEIGHT=0.8 \
RESOLUTION=0.01 MESHDEPTH=2
Initialize a new wafer for a 2D simulation in XZ plane.
INIT MATERIAL="silicon" \
FROM=0.1 TO=1.4 DEPTH=0.2 GASHEIGHT=0.8 \
RESOLUTION=0.01 MESHDEPTH=2
Initialize a new wafer for a 2D simulation in YZ plane making the 'vertical'
cut through the mask layout at position specified by AT parameter.
INIT LAYOUT="masks.lay" MATERIAL="silicon" \
RESOLUTION=0.01 FROM=0.2 TO=0.8" AT=0.55 FLOW.DIM=2D_YZ
Initialize a new wafer for 3D simulation with an automatically set simulation domain
INIT LAYOUT="masks.lay" MATERIAL="silicon" \
RESOLUTION="0.01, 0.01, 0.01" DEPTH=2
GASHEIGHT=0.8 MESHDEPTH=1 \
PADDING=0.05 PADDING.XP=0.1 HALF.XP
Specify multiple dopants:
INIT FROM="0, 0" TO="0.9, 0.7" \
RESOLUTION="0.1, 0.1, 0.1" MESHDEPTH=2 DOPMESHFACTOR=1.5 \
MATERIAL=silicon DEPTH=0.3 GASHEIGHT=0.8 \
DOPANTS="boron, arsenic" DOPINGVALUES="1e15, 1e12"
Specify single dopant:
INIT FROM="0, 0" TO="0.9, 0.7" \
RESOLUTION="0.1, 0.1, 0.1" MESHDEPTH=2 DOPMESHFACTOR=1.5 \
MATERIAL=silicon DEPTH=0.3 GASHEIGHT=0.8 \
DOPANTS=boron DOPINGVALUES=1e15
Initialize a new wafer for simulation (mask alignment = <110>)
INIT FROM="0, 0" TO="0.9, 0.7" \
RESOLUTION="0.1, 0.1, 0.1" MESHDEPTH=2 \
MATERIAL=silicon DEPTH=0.3 GASHEIGHT=0.8 \
ORIENTATION=100 SUB.ROT=45
Initialize a new wafer for double side 3D simulation
INIT LAYOUT="masks.lay" MATERIAL="silicon" \
FROM="0.1, 0.2" TO="1.2, 1.8" DEPTH=2 GASHEIGHT=0.8 \
RESOLUTION=0.01 MESHDEPTH=3 \
FLIP
Initialize an SiC wafer for 3D simulation :
INIT MATERIAL=sic-4h DEPTH=1.0 GASHEIGHT=0.5 SUB.TYPE="HEXAGONAL" SUB.ROT=0. \
FROM="-1,-1" TO="1, 1" \
RESOLUTION=0.05
Initialize a wafer with resistivity :
INIT MATERIAL="silicon" BORON RESISTIVITY=150 \
FROM=0 TO=0.7 DEPTH=1 GASHEIGHT=1.0 \
RESOLUTION=0.01
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