Synopsys Sentaurus TCAD系列教程之--Sprocess(SmallMOS_2D3D) 解析

SmallMOS_2D3D解析

#header

## STI depth
set sti_depth 0.15
## Half STI width
set sti_width @sti_width@
## Half gate length
set gate_len @<lg/2>@
## SD length (from center)
set sd_len [expr $gate_len+0.05]

#endheader

## X lines
line x location= 0.0			spacing= 0.001		tag= top
line x location= $sti_depth	spacing= 0.020	
line x location= 1.0			spacing= 0.100	tag= bot

## Y lines
line y location= 0			tag= left
line y location= 2*$sti_width	tag= right

## No Z lines (structure is 2D initially)

region Silicon xlo= top xhi= bot ylo= left yhi= right
init wafer.orient= 100 field= Boron concentration= 2e15

## Recommeded in all projects
AdvancedCalibration
math coord.ucs

## Recomended for 3D projects
pdbSet Mechanics EtchDepoRelax 0

## Mesh settings
refinebox min.normal.size= 0.005 normal.growth.ratio= 1.5
refinebox add min= "0 -$sti_width -1" max= "$sti_depth $sti_width 1" xrefine= {0.002 0.010 0.020} yrefine= $sti_width/3

## Body implant
implant Boron dose= 2e13 energy= 15 tilt= 7 rotation= 22

# Etch STI
mask name= STI left= -$sti_width right= $sti_width front= -10 back= 10
deposit Nitride type= isotropic thickness= 0.100

etch Nitride type= anisotropic thickness= 0.120 mask= STI
etch Silicon type= directional thickness= $sti_depth direction= { 1.0 0.05 0.05 }

deposit Oxide type= fill  coord= 0

strip Nitride

## etch oxide isotropoic thickness= 0.010
pdbSet Oxide_Silicon Boron Segregation 0.1

## Real gate oxidation (structure is still 2D)
deposit type= isotropic Oxide thickness= 0.002 selective.materials= {Silicon} temperature= 850

temp_ramp name= gox time= 20 temperature= 27 t.final= 600
temp_ramp name= gox time= 5 temperature= 600 t.final= 850
temp_ramp name= gox time= 2  temperature= 850 O2
temp_ramp name= gox time= 10 temperature= 850 t.final= 600
temp_ramp name= gox time= 20 temperature= 600 t.final= 27
diffuse temp.ramp= gox

#split @Spacer@

## Z lines.Structure becomes 3D
line z location= 0					tag= front
line z location= $sd_len+$sti_width 		tag= back


## Deposit poly
deposit PolySilicon type= fill coord= -0.050

## Gate etch
mask name= GATE left= -1 right= 1 front= -$gate_len back= $gate_len

etch PolySilicon type= anisotropic thickness= 0.100 mask= GATE
deposit Nitride type= isotropic  thickness= 0.012
etch Nitride anisotropic thickness= 0.018
etch Oxide type= anisotropic thickness= 0.0025
refinebox add min= "0 -$sti_width -$gate_len" max= "0.020 $sti_width $gate_len" xrefine= {0.001 0.003  0.005} zrefine= {0.001 0.005 0.001}

#split @SD@

implant Arsenic energy=5 dose=1e15 tilt=0 rotation=0

temp_ramp name= r1 time= 5 temperature= 27 t.final= 600
temp_ramp name= r1 time= 0.1<s> temperature= 600 t.final= 1000
temp_ramp name= r1 time= 5<s> temperature= 1000 
temp_ramp name= r1 time= 3<s> temperature= 1000  t.final= 600
temp_ramp name= r1 time= 5 temperature= 600  t.final= 27
diffuse temp.ramp= r1

#split @Contacts@

set minx -0.020
etch type= cmp coord= $minx
## transform cut up location= $minx
transform reflect back

## remeshing for device simulation
grid set.Delaunary.type= boxmethod
refinebox min= {0.0 -@sti_width@ @<-lg/2>@} max= {0.005 @sti_width@ @<lg/2>@}  xrefine= {0.001 0.001 0.002}
grid remesh

contact name= gate box PolySilicon xlo=$min-0.005 xhi=$minx+0.005 ylo=@<-sti_width>@ yhi=@sti_width@ zlo=@<-lg/2.1>@ zhi=@<lg/2.1>@
contact name= source box Silicon xlo=-0.005 xhi=0.005 ylo=@<-sti_width>@ yhi=@sti_width@ zlo=@<-lg/2-0.050>@ zhi=@<-lg/2-0.030>@
contact name= drain box Silicon xlo=-0.005 xhi=0.005 ylo=@<-sti_width>@ yhi=@sti_width@ zlo=@<lg/2+0.030>@ zhi=@<lg/2+0.050>@

contact name= substrate bottom

struct tdr= n@node@

mask left right font back

mask name= STI left= -$sti_width right= $sti_width front= -10 back= 10

• mask
  创建光罩，以供后续在蚀刻、沉积或光刻命令中使用
• left right front back
  指定一个矩形(rectangle)的角。矩形被添加到光罩当前列表中。如果一个光罩指定多个矩形，则必须已相同的名称使用多个光罩命令。默认单位是：um

deposit Oxide type= fill coord= 0

• coord : 指定type=fill的x坐标。默认单位:um
• type=fill: 执行填充指定的材料，直到参数指定的坐标为止

pdbSet Oxide_Silicon Boron Segregation 0.1

• Segregation: 这是除氧化物-硅、氧化物-SiC和氮氧化物-硅界面处的磷外，所有界面处掺杂剂的默认边界条件.分离边界条件也称为两相分离边界条件。界面处的总掺杂剂通量是平衡的。
• 如果必须包含掺杂剂的电荷态或必须设置掺杂-缺陷对的边界条件，使用以下命令：

   pdbSet <interface_material> <dopant> Surf.Recomb.Model <bulk_diffusion_model> <model>

• 对于任何掺杂剂扩散模型(dopant diffusion model)，如果表面重组模型(the surface recombination model)设置为默认，参数设置用以下命令:

    pdbSet <interface material > <dopant>  Transfer {<n>}
    pdbSet <interface material> <dopant>  Segregation {<n>}

etch type= cmp coord= $minx

etch: 移除部分或全部暴露的层
coord: type= cmp使用的x坐标，默认单位:um
type：指定要执行的蚀刻类型
type=cmp：执行CMP并与参数坐标一起使用