还是对之前的n型igbt进行仿真,不过这次仿真的现象是温度对于igbt 的开启电阻的影响,这次是比较成功的一次仿真。我们代码如下:
go atlas simflag="-p 16"
mesh width=1
x.mesh loc=0 spac=0.02
x.mesh loc=0.3 spac=0.01
x.mesh loc=0.9 spac=0.01
x.mesh loc=1.3 spac=0.01
x.mesh loc=1.5 spac=0.01
x.mesh loc=1.6 spac=0.01
x.mesh loc=2.8 spac=0.01
x.mesh loc=2.9 spac=0.01
x.mesh loc=3.1 spac=0.01
x.mesh loc=3.5 spac=0.01
x.mesh loc=4.1 spac=0.02
x.mesh loc=4.4 spac=0.02
y.mesh loc=-0.01 spac=0.1
y.mesh loc=-0.005 spac=0.1
y.mesh loc=0 spac=0.001
y.mesh loc=0.025 spac=0.01
y.mesh loc=0.05 spac=0.01
y.mesh loc=18 spac=4
y.mesh loc=18.03 spac=0.01
y.mesh loc=18.53 spac=0.01
y.mesh loc=18.54 spac=0.01
region number=1 x.min=0 x.max=4.4 y.min=0 y.max=18.53 material=sic-4H
region number=2