半桥波形：IR2104s以及LR7843

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已于 2025-02-05 19:09:14 修改

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于 2025-02-05 18:52:14 首次发布

本文链接：https://blog.csdn.net/zhuoqingjoking97298/article/details/145456348

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MOS管半桥电路

AD\Test\2025\February\TestIR2104S.PcbDoc

01 半桥电路

一、前言

近期需要制作一个小型直流电机的驱动，下面测试一个常用到的功率MOS半桥电路的基本参数。

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二、电路设计

测试电路非常简单， MOS 半桥驱动使用 IR2104， MOS管使用IRLR7843，这是极低导通内阻，耐压30V的MOS管。设计单面PCB，适合一分钟制板。一分钟之后得到了测试电路板，焊接清洗之后，进行测试。

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三、测试结果

给电路提供12V的工作电源。利用DG1062提供50kHz方波驱动信号。测量两个MOS管栅极信号。他们是互补反相的方波信号。上面是上桥臂MOS管栅极信号，下面是下桥臂MOS管栅极信号。展开波形，可以看到上下桥臂之间大约有500ns的死区时间。

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切换到下降沿，可以看到，上下桥臂之间仍然有500ns的死区延迟。在下桥臂栅极信号中，可以看到对应的弥勒平台效应。这是在两个MOS栅极增加10Ω电阻情况下，测量得到的结果。

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作为对比，将MOS管栅极串联的10欧姆电阻去掉，改成0欧姆，可以看到波形似乎没有变化。这有可能是因为现在电路并没有带有负载，以及栅极连接线路比较短。所以MOS管的栅极波形并没有出现振铃。

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四、工作电源

使用数字万用表测量半桥的输出，通过DH1766提供从5V 到15V不同的工作电源。查看一下，半桥输出电压与工作电压之间的关系。通过测量数据可以知道，只有当 IR2104s的工作电压超过 9.23V之后，半桥才有输出。输出电压大约为工作电压的一半，这是因为现在输出电压方波占空比为50%。由此，得到 IR2104s的工作电压必须超过 9.23V。

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▲ 图1.4.1 不同工作电源对应的半桥输出

▲ 图1.4.1 不同工作电源对应的半桥输出

#!/usr/local/bin/python
# -*- coding: gbk -*-
#============================================================
# TEST1.PY                     -- by Dr. ZhuoQing 2025-02-05
#
# Note:
#============================================================
from headm import *
from tsmodule.tsstm32       import *
from tsmodule.tsvisa        import *
vdim = linspace(5, 15, 100)
odim = []
for v in vdim:
    dh1766volt1(v)
    time.sleep(2)
    o = meterval()[0]
    odim.append(o)
    tspsave("volt", vdim=vdim, odim=odim)
    printff(v, o)
plt.plot(vdim, odim, lw=3)
plt.xlabel("Voltage(V)", color="steelblue", fontsize=16)
plt.ylabel("Output(V)", color="steelblue", fontsize=16)
plt.grid(True)
plt.tight_layout()
plt.show()
#------------------------------------------------------------
#        END OF FILE : TEST1.PY
#============================================================

vdim=[5.0000,5.1010,5.2020,5.3030,5.4040,5.5051,5.6061,5.7071,5.8081,5.9091,6.0101,6.1111,6.2121,6.3131,6.4141,6.5152,6.6162,6.7172,6.8182,6.9192,7.0202,7.1212,7.2222,7.3232,7.4242,7.5253,7.6263,7.7273,7.8283,7.9293,8.0303,8.1313,8.2323,8.3333,8.4343,8.5354,8.6364,8.7374,8.8384,8.9394,9.0404,9.1414,9.2424,9.3434,9.4444,9.5455,9.6465,9.7475,9.8485,9.9495,10.0505,10.1515,10.2525,10.3535,10.4545,10.5556,10.6566,10.7576,10.8586,10.9596,11.0606,11.1616,11.2626,11.3636,11.4646,11.5657,11.6667,11.7677,11.8687,11.9697,12.0707,12.1717,12.2727,12.3737,12.4747,12.5758,12.6768,12.7778,12.8788,12.9798,13.0808,13.1818,13.2828,13.3838,13.4848,13.5859,13.6869,13.7879,13.8889,13.9899,14.0909,14.1919,14.2929,14.3939,14.4949,14.5960,14.6970,14.7980,14.8990,15.0000]
odim=[-0.2847,0.0055,0.0087,0.0068,0.0070,0.0070,0.0072,0.0073,0.0073,0.0073,0.0074,0.0066,0.0075,0.0076,0.0067,0.0067,0.0068,0.0067,0.0077,0.0068,0.0078,0.0068,0.0068,0.0080,0.0068,0.0068,0.0069,0.0081,0.0082,0.0068,0.0082,0.0070,0.0070,0.0069,0.0084,0.0070,0.0070,0.0086,0.0071,0.0071,0.0071,0.0070,4.5797,4.6300,4.6807,4.7314,4.7821,4.8324,4.8831,4.9338,4.9844,5.0352,5.0855,5.1364,5.1869,5.2376,5.2882,5.3389,5.3889,5.4397,5.4903,5.5408,5.5916,5.6416,5.6923,5.7430,5.7934,5.8441,5.8945,5.9447,5.9953,6.0457,6.0965,6.1471,6.1971,6.2479,6.2983,6.3490,6.3995,6.4500,6.5002,6.5506,6.6013,6.6520,6.7024,6.7532,6.8033,6.8538,6.9045,6.9548,7.0056,7.0555,7.1062,7.1567,7.2073,7.2580,7.3086,7.3585,7.4092,7.4596]

五、最低频率

半桥驱动电路 IR2104s ，依靠自举电容，为上桥臂MOS管提供超过工作电压的驱动电压信号。当然，自举电容上的电压会在输出高电平的过程中逐步下降，下面测量一下，驱动信号频率非常低的情况下，自举驱动信号变化情况。现在自举电容容量为 0.1微法，可以看，上桥臂MOS管栅极电压下降过程，当超过50ms之后，上桥臂就截止了。下面波形是半桥输出信号变化情况。由于没有带负载，所以在超过50ms之后，半桥输出为高阻状态。这说明，半桥无法始终输出静态高电平，或者说，无法输出占空比为 100% PWM波形，占空比有一个上限。

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※ 总结 ※

本文测试了MOS管半桥电路的波形。使用IR2104s驱动MOS半桥，它的最小工作电压必须超过 9.23V。在自举电容为 0.1微法的情况下， PWM波形的高电平不能够超过 50ms。这个电路无法输出100% 占空比的PWM波形。它的上桥臂和下桥臂驱动信号具有 500纳秒的死区时间。基于这些测量，为今后的电路设计积累经验。
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