Silvaco仿真实例学习GaN FET下模拟电流崩塌效应

对于silvaco软件的学习来说，silivaco软件存在众多的仿真实例，在我们学习的时候最优的方法就是根据软件给出的实例进行具体分析结合仿真手册逐一解决难题最终形成自己的仿真能力。从我个人的偏好来说仿真实例的分析还是先给出源代码再逐条进行分析，以求能够充分地理解掌握这个器件的仿真建模和I-V仿真分析。

一、输入源代码

go atlas simflags="-P 6" 

mesh width=1000

x.mesh location=-2.5  spacing=0.5
x.mesh location=-1.2  spacing=0.1
x.mesh location=-1    spacing=0.05
x.mesh location=-0.5  spacing=0.1
x.mesh location=0     spacing=0.02
x.mesh location=0.25  spacing=0.01
x.mesh location=1.5  spacing=0.2
x.mesh location=3     spacing=0.05
x.mesh location=3.2   spacing=0.1
x.mesh location=4.5   spacing=0.5

y.mesh location=-0.01  spacing=0.002
y.mesh location=0      spacing=0.005
y.mesh location=0.023  spacing=0.0002
y.mesh location=1.923  spacing=0.5

region number=1 material=oxide y.max=0.023
region number=2 material=GaN y.min=0.023 substrate 
region number=3 material=AlGaN x.min=-1 x.max=3 y.min=0 y.max=0.023 x.comp=0.28 

electrode name=source x.min=-2.5 x.max=-1.2 y.min=-0.01 y.max=0.023
electrode name=gate   x.min=0    x.max=0.25 y.min=-0.01 y.max=0
electrode name=drain  x.min=3.2  x.max=4.5  y.min=-0.01 y.max=0.023

doping  n.type gaussian conc=2.8e18 characteristic=0.01 lat.char=0.2 \ 
        peak=0.023 x.min=-2.5 x.max=-0.8
doping  n.type gaussian conc=2.8e18 characteristic=0.01 lat.char=0.2 \
        peak=0.023 x.min=2.8 x.max=4.5

doping  trap acceptor e.level=1.0 concentration=1e18 gaussian peak=1 \
        characteristic=0.455 degen.fac=1 sign=1e-15 sigp=1e-15

models srh print
model calc.strain polarization
mobility fmct.n gansat.n
contact name=gate workfunc=5.15

method climit=1e-4 ir.tol=1e-22