记录模型都是什么 都用了什么
低场迁移率:
1 MUN and MUP parameters to set constant values for electron and hole mobilities and optionally specify temperature dependence.
2 using a look-up table model (CONMOB) to relate the low-field mobility at 300K to the impurity concentration.
3 the analytic low-field mobility models, ANALYTIC, ARORA, or MASETTI, to relate the low-field carrier mobility to impurity concentration and temperature.
4a carrier-carrier scattering model (CCSMOB, CONWELL, or BROOKS) that relates the low-field mobility to the carrier concentrations and temperature.
5 unified low-field mobility model (