HEMT例子4

energy balance models 和漂移扩散模型对比。能量依赖模型主要包括了速度过冲和非局部碰撞离化

This example demonstrates Id-Vds calculations in single quantum-well AlGaAs/GaAs HEMT using Energy Balance (EB) and Drift Diffusion (DD) Models. It includes

• Construction of a heterojunction structure using Atlas syntax
• Material parameter specification
• Physical model specification including the energy balance model
• Simulation of Id-Vds characteristic with Vgs=0.0V
• Repeat simulation using drift-diffusion models for comparison
• Display of combined results in TonyPlot

The example file consists of two Atlas runs. Both use the same device structure defined in a similar manner to the previous two examples. The first run uses energy balance models to simulate Id-Vds characteristics and the second does the same electrical simulation using the classical drift-diffusion model. The aim of the example is to compare the effects of the different carrier transport models.

 

Energy balance models provide a more accurate description of physical device effects, in particular the effects of velocity overshoot and non-local impact ionization. These are not handled by the classical drift-diffusion model. These two effects can be observed in sub-micron HEMT simulation. This example concentrates on the velocity overshoot effect in the GaAs-AlGaAs structure. Non-local impact ionization effects can be seen in breakdown simulations. Since velocity overshoot is not accounted for in the drift-diffusion model, the results from simulations with this model will underestimate the current. This discrepancy gets worse as the channel length decreases.

The sequence of simulation syntax is similar to the previous example. For energy balance simulation, additional input parameters need to be defined in particular carrier energy and mobility relaxation times. In these examples the electron relaxation times taurel.el and taumob.el are defined in the two separate material statements for the GaAs and AlGaAs materials, overriding the default values. In the same statements the low field electron mobilities are specified for GaAs and AlGaAs. The saturation velocity is also explicitly defined here for GaAs. The material statement for AlGaAs also contains the align parameter, which defines the portion of the energy band gap difference going to the conduction band (60% in this example) at the GaAs-AlGaAs heterojunction. If the align parameter is present in the material statement the energy ban