缩写 | 全称 | 描述 |
---|---|---|
AIC | Add-In-Card | |
M.2(NGFF) | Next Generation Form Factor | |
FW | Firmware(固件) | 调度各个硬件模块,完成数据从主机端到闪存端的写入和读取 |
SATA | Serial Advanced Technology Attachment(串口高级技术) | |
SAS | Serial Attached SCSI(串行连接SCSI) | |
PCIe | Peripheral Component Interconnect Express | |
QoS | Quality of Service | |
FIS | Frame Information Structure(帧信息结构) | |
FTL | Flash Translation Layer | |
I-RAM | 代码存储区 | |
D-RAM | 数据存储区 | |
SMP | 对称多处理 | |
AMP | 非对称多处理 | |
RAID | Redundant Arrays of Independent Disks(独立磁盘冗余阵列) | |
DMAC | Direct Memory Access Controller | |
AFA | 全闪存阵列 | |
BBU | Battery Backup Unit(备用电源) | |
CFS | Computing Flash System(计算闪存系统) | |
SLC | Single Level Cell | |
TLC | Single Level Cell | |
TLC | Triple Level Cell | |
BiCS | Bit Cost Scalable | BiCS利用了多晶硅栅极,BiCS的编程/擦除窗口比较窄,擦除方法是GIDL |
TCAT | Terabit Cell Array Transistor | TCAT利用了金属栅极,TCAT的编程/擦除窗口比较宽,擦除方法是群擦除方法 |
CT | Charge Trap(电阱) | |
CLE | Command Latch Enable | CLE有效时IOx发送命令 |
CE | Chip Enable | 选择当前数据传输的是哪个Target |
WE | Write Enable | |
ALE | Address Latch Enable | |
IOx | 数据总线 | |
tWP | WE_n低电平脉冲的宽度 | |
tWH | WE_n高电平保持时间 | |
tWC | tWP与tWH合起来一个周期的时间 | |
tDS | 数据建立时间 | |
tDH | 数据稳定时间 | |
DDR | Double Data Rate | |
DQS | Data Strobe | |
tCALS | CLE、W/R_n和ALE的建立时间 | |
tDQSS | 数据输入到第一个DQS跳变沿的时间 | |
LDPC | Low Density Parity Check Code | |
FTL | Flash Translation Layer(闪存转换层) | 完成逻辑地址空间到物理地址空间的映射 |
FW | FirmWare(固件) | |
GC | Garbage Collection(垃圾回收) | |
PE | Program/EraseCount | |
LBA | Logical Block Address(逻辑块地址) | |
L2P | Logical address To Physical address(逻辑地址到物理地址转换) | |
WA | Write Amplification(写放大) | |
OP | Over Provisioning(预留空间) | |
HMB | Host Memory Buffer(主机高速缓冲存储器) | |
HMS | Host Managed SSD | |
VPBM | Valid Page Bit Map | |
VPC | Valid Page Count | |
EC | Erase Count(擦除次数) | |
SWL | 静态磨损平衡 | |
DWL | 动态磨损平衡 | |
OTP | One Time Programming | |
UECC | Uncorrectable Error Correction Code | |
RD | Read Disturb | |
DR | Data Retention | |
SSD缩写对照表
最新推荐文章于 2024-01-17 21:21:49 发布