DRAM Power down mode

 There are three power down modes for , including IDD2P (precharge power down),
IDD3P (active power down, slow exit), and IDD3P (active power down, fast exit). Precharge
power-down occurs when all banks are idle and is the lowest power state other
than self-refresh mode (IDD6). If power-down occurs when there is a row active in any
bank, the mode is referred to as active power-down. For active power down, fast or slow
exit is determined by the configuration of the mode register (MR12 = 0 for fast or MR12 =
1 for slow). The advantage of the slow exit is less device power consumption.
Entering power-down deactivates the input and output buffers, excluding CK, CK#, ODT,
and CKE. For maximum power savings, the DLL generally is frozen during precharge
power-down.
Exiting active power-down requires the device to be at the same voltage and frequency
as when it entered power-down. Exiting precharge power-down requires the device to
be at the same voltage as when it entered power-down; however, the clock frequency is
allowed to change as specified within Micron data sheets.
Maximum power-down duration is governed by the refresh requirements of the device.