在sentaurus的sdevice里什么意思

File {
    Output= "@log@"    
}

Plot{
  *- Carrier Densities:
  eDensity hDensity
  # EffectiveIntrinsicDensity IntrinsicDensity
  # eEquilibriumDensity hEquilibriumDensity
  *- Currents and current components:
  Current eCurrent hCurrent
  # ConductionCurrent/Vector DisplacementCurrent/Vector
  eMobility hMobility
  eVelocity hVelocity
  *- Fields, Potentials and Charge distributions
  ElectricField/Vector
  Potential
  eQuasiFermi hQuasiFermi
  SpaceCharge
  *- Driving forces
  eGradQuasiFermi/Vector hGradQuasiFermi/Vector
  eEparallel hEparallel
  eENormal hENormal
  # eEffectiveField hEffectiveField
  *- Temperatures
  LatticeTemperature
  eTemperature hTemperature
  *- Generation/Recombination
  SRHRecombination Band2BandGeneration AugerRecombination RadiativeRecombination
  AvalancheGeneration eAvalancheGeneration hAvalancheGeneration
  TotalRecombination
  eLifeTime hLifeTime
  SurfaceRecombination
  # CDL CDL1 CDL2 CDL3
  # eCDL1lifetime eCDL2lifetime hCDL1lifetime hCDL2lifetime
  # SurfaceMultRecombination
  *- Doping Profiles
  Doping
  DonorConcentration AcceptorConcentration
  # AntimonyConcentration ArsenicConcentration BoronConcentration
  # IndiumConcentration NitrogenConcentration PhosphorusConcentration
  # NDopantConcentration PDopantConcentration
  *- Incomplete ionization
  # AsPlus PhPlus SbPlus NitrogenPlus
  # BMinus InMinus
  # NDopantPlus PDopantMinus

  *- Band structure
  BandGap
  BandGapNarrowing
  ElectronAffinity
  ConductionBandEnergy ValenceBand
  eQuantumPotential hQuantumPotential
  *- Composition
  # xMoleFraction yMoleFraction
  *- Traps
  # eTrappedCharge hTrappedCharge
  # eGapStatesRecombination hGapStatesRecombination
  *- Optical Generation
  # ComplexRefractiveIndex AbsorbedPhotonDensity OpticalGeneration
  # OpticalAbsorptionHeat QuantumYield
  *- Generation due to Ion Strikes
  # AlphaCharge HeavyIonChargeDensity
  *- Gate Tunneling/Hot carrier injection
  # FowlerNordheim
  # HotElectronInjection HotHoleInjection
  *- Tunneling
  # BarrierTunneling eBarrierTunneling hBarrierTunneling
  # eDirectTunnelCurrent hDirectTunnelCurrent
  *- Ionization Integrals
  # MeanIonIntegral eIonIntegral hIonIntegral
  *- Heat flow
  # TotalHeat eJouleHeat hJouleHeat
  # PeltierHeat ThomsonHeat RecombinationHeat
  # ThermalConductivity
  *- Stress-Tensor
  # Stressxx Stressxy Stressxz Stressyy Stressyz Stresszz
  *- Ferro-electrical Polarization
  # Polarization/Vector
  *- Piezo
  # PiezoCharge ConversePiezoelectricField
  # ConversePiezoelectricFieldXX ConversePiezoelectricFieldXY ConversePiezoelectricFieldXZ
  # ConversePiezoelectricFieldYY ConversePiezoelectricFieldYZ ConversePiezoelectricFieldZZ

}File {
    Output= "@log@"    
}

Plot{
  *- Carrier Densities:
  eDensity hDensity
  # EffectiveIntrinsicDensity IntrinsicDensity
  # eEquilibriumDensity hEquilibriumDensity
  *- Currents and current components:
  Current eCurrent hCurrent
  # ConductionCurrent/Vector DisplacementCurrent/Vector
  eMobility hMobility
  eVelocity hVelocity
  *- Fields, Potentials and Charge distributions
  ElectricField/Vector
  Potential
  eQuasiFermi hQuasiFermi
  SpaceCharge
  *- Driving forces
  eGradQuasiFermi/Vector hGradQuasiFermi/Vector
  eEparallel hEparallel
  eENormal hENormal
  # eEffectiveField hEffectiveField
  *- Temperatures
  LatticeTemperature
  eTemperature hTemperature
  *- Generation/Recombination
  SRHRecombination Band2BandGeneration AugerRecombination RadiativeRecombination
  AvalancheGeneration eAvalancheGeneration hAvalancheGeneration
  TotalRecombination
  eLifeTime hLifeTime
  SurfaceRecombination
  # CDL CDL1 CDL2 CDL3
  # eCDL1lifetime eCDL2lifetime hCDL1lifetime hCDL2lifetime
  # SurfaceMultRecombination
  *- Doping Profiles
  Doping
  DonorConcentration AcceptorConcentration
  # AntimonyConcentration ArsenicConcentration BoronConcentration
  # IndiumConcentration NitrogenConcentration PhosphorusConcentration
  # NDopantConcentration PDopantConcentration
  *- Incomplete ionization
  # AsPlus PhPlus SbPlus NitrogenPlus
  # BMinus InMinus
  # NDopantPlus PDopantMinus

  *- Band structure
  BandGap
  BandGapNarrowing
  ElectronAffinity
  ConductionBandEnergy ValenceBand
  eQuantumPotential hQuantumPotential
  *- Composition
  # xMoleFraction yMoleFraction
  *- Traps
  # eTrappedCharge hTrappedCharge
  # eGapStatesRecombination hGapStatesRecombination
  *- Optical Generation
  # ComplexRefractiveIndex AbsorbedPhotonDensity OpticalGeneration
  # OpticalAbsorptionHeat QuantumYield
  *- Generation due to Ion Strikes
  # AlphaCharge HeavyIonChargeDensity
  *- Gate Tunneling/Hot carrier injection
  # FowlerNordheim
  # HotElectronInjection HotHoleInjection
  *- Tunneling
  # BarrierTunneling eBarrierTunneling hBarrierTunneling
  # eDirectTunnelCurrent hDirectTunnelCurrent
  *- Ionization Integrals
  # MeanIonIntegral eIonIntegral hIonIntegral
  *- Heat flow
  # TotalHeat eJouleHeat hJouleHeat
  # PeltierHeat ThomsonHeat RecombinationHeat
  # ThermalConductivity
  *- Stress-Tensor
  # Stressxx Stressxy Stressxz Stressyy Stressyz Stresszz
  *- Ferro-electrical Polarization
  # Polarization/Vector
  *- Piezo
  # PiezoCharge ConversePiezoelectricField
  # ConversePiezoelectricFieldXX ConversePiezoelectricFieldXY ConversePiezoelectricFieldXZ
  # ConversePiezoelectricFieldYY ConversePiezoelectricFieldYZ ConversePiezoelectricFieldZZ

}在senturus里什么意思

在 Synopsys Sentaurus TCAD 软件中，这段代码是用于设置模拟输出的配置文件。它定义了模拟过程中需要记录和输出的数据类型。下面是对这段代码的详细解释：

1. `File` 部分：
   - `Output= "@log@"`：这行指定了模拟日志文件的名称。`@log@` 是一个占位符，实际运行时会被替换为具体的文件名。

2. `Plot` 部分：
   - 这个部分列出了在模拟结束后需要输出的各种物理量。每个条目都以 `*-` 开头，后面跟着对该物理量的描述。
   - 有些条目被注释掉了（以 `#` 开头），这意味着它们不会被包含在输出中。
   - 以下是一些未被注释的输出项的解释：
     - `eDensity` 和 `hDensity`：分别代表电子和空穴的浓度。
     - `Current`、`eCurrent` 和 `hCurrent`：分别代表总电流、电子电流和空穴电流。
     - `ElectricField/Vector` 和 `Potential`：分别代表电场向量和电势。
     - `eQuasiFermi` 和 `hQuasiFermi`：分别代表电子和空穴的准费米能级。
     - `LatticeTemperature`、`eTemperature` 和 `hTemperature`：分别代表晶格温度、电子温度和空穴温度。
     - `SRHRecombination`、`Band2BandGeneration`、`AugerRecombination` 等：代表不同类型的复合和产生过程。
     - `Doping`、`DonorConcentration` 和 `AcceptorConcentration`：代表掺杂浓度，包括施主和受主浓度。
     - `BandGap`、`ElectronAffinity`、`ConductionBandEnergy` 和 `ValenceBand`：代表能带结构相关的物理量，如带隙、电子亲和力、导带能量和价带能量。
     - `Stressxx`、`Stressxy`、`Stressxz`、`Stressyy`、`Stressyz` 和 `Stresszz`：代表应力张量的不同分量。

这些输出项通常用于分析和验证半导体器件的性能，如电流-电压特性、载流子分布、电场和电势分布、温度分布、复合和产生过程等。通过这些数据，工程师可以更好地理解器件的工作原理，并进行必要的设计优化。

请注意，这段代码是用于设置模拟输出的，而不是直接用于模拟本身。实际的模拟过程需要在 Sentaurus TCAD 软件中进行，涉及到器件的几何结构、材料属性、物理模型等更详细的设置。