Synopsys Sentaurus TCAD系列教程之--Diode(sde) 解析

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已于 2023-03-01 14:50:55 修改 · 3.3k 阅读

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#TCAD #Sde

于 2023-02-23 09:57:46 首次发布

##Diode(sde)解析

(define Wsi @SiWidth@）      ;Width of Silicon Region
(define Hsi 1.0)   		   	;Height of Silicon Region
(define Wpo 0.5)             ; Width of Poly Region
(define Hpo  0.5)             ; Height of Poly Region
(define SiPoOver (* 0.5 Hpo)) ;Overlap of both regions
(define Nd 1e20)               ;  Poly doping level
(define Na 1e18)               ; Silicon doping level
(define NumberOfPointsXsi  8)  ; Number of grid points in Silicon
(define NumberOfPointsYsi   8)
(define NumberOfPointsXpo  8)   ;Number of grid points in Silicon
(define NumberOfPointsYpo 8)

(sdegeo:create-rectangle (position (* -0.5 Wsi) 0.0 0.0) (position ( * 0.5 Wsi) Hsi 0.0 ) "Silicon" "R.Silicon")
(sdegeo:set-default-boolean "ABA")

(define Ypo1 SiPoOver)
(define Ypo2 ( - Ypo1 Hpo))

(sdegeo:create-rectangle (position ( * -0.5 Wpo) Ypo1 0.0 ) (position ( * 0.5 Wpo)  Ypo2 0.0) "PolySi" "R.Poly" )

(sdegeo:set-contact (find-edge-id(position 0.0 Ypo2 0.0)) "Top" )
(sdegeo:set-contact