Interview of Qualcomm

1. Describe the ID equation of MOSFET at different region; (注意：深三极管区、亚阈值导电性）
2. How the cascode works and its pro/con;（优点：输出阻抗高具有屏蔽特性、在相同的电压摆幅约束下增益增加更多且噪声小相较于单管；缺点：牺牲了电压裕度）
3. What is the equivalent small signal model of MOS/BJT
4. Describe the differential pair functionality and CMRR （对环境噪声具有更强的抗干扰能力、增大了可得到的最大电压摆幅、偏置电路更简单、更高的线性度）（1、尾电流源有限的输出阻抗导致对称差动对产生一些共模增益影响对称电路的输出共模电平变化、1、电路的不对称性会引起差动输出的改变导致输入共模电压变化在输出端产生差模分量，当共模扰动的频率增加时与尾电流源并联的总电容会使尾电流产生很大的变化，因此即使尾电流源的输出阻抗很大，共模到差模的转换在高频时也会变得很严重）
5. Draw the system architecture of the cellphone front end module
6. How to choose BW/TSV/FC for the circuit design
7. What is the difference between CMOS and GaAs PA?How to address those difference?
8. What is ET?How it works?What the PA should change comparing with NonET architecture?
9. Why RX noise is important?
10. Why TX leakage is important?
11. How t