真空中的静电场
- 库仑定律:
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F=\frac{1}{4\pi\varepsilon_0}\frac{q_1q_2}{r^2}\pmb r^0
F=4πε01r2q1q2rrr0
其中 ε 0 = 8.85 × 1 0 − 12 C 2 ⋅ N − 1 ⋅ m − 2 \varepsilon_0=8.85\times10^{-12}C^2\cdot N^{-1}\cdot m^{-2} ε0=8.85×10−12C2⋅N−1⋅m−2 - 电场强度: E = F q 0 \pmb E=\frac{\pmb F}{q_0} EEE=q0FFF
- 点电荷的电场强度表达方式: E = q 4 π ε 0 r 2 r 0 \pmb E=\frac{q}{4\pi\varepsilon_0r^2}\pmb r^0 EEE=4πε0r2qrrr0
- 高斯定理: ∮ s E ⋅ d S = ∑ q i ε 0 \oint_s \pmb E\cdot d\pmb S=\frac{\sum q_i}{\varepsilon_0} ∮sEEE⋅dSSS=ε0∑qi
- 静电场环路定理: ∮ L E ⋅ d l = 0 \oint_L\pmb E\cdot d\pmb l=0 ∮LEEE⋅dlll=0
- 电势能: W a = ∫ a ∞ q 0 E ⋅ d l W_a=\int_a^\infty q_0\pmb E\cdot d\pmb l Wa=∫a∞q0EEE⋅dlll
- 电势: V a = W a q 0 = ∫ a ∞ E ⋅ d l V_a=\frac{W_a}{q_0}=\int_a^\infty \pmb E\cdot d\pmb l Va=q0Wa=∫a∞EEE⋅dlll
- 点电荷电势: V a = q 4 π ε 0 r V_a=\frac{q}{4\pi\varepsilon_0r} Va=4πε0rq
- 连续带电体电势: V a = 1 4 π ε 0 ∫ d q r V_a=\frac{1}{4\pi\varepsilon_0}\int\frac{dq}{r} Va=4πε01∫rdq
- 电势差: U a b = V a − V b = ∫ a b E ⋅ d l U_{ab}=V_a-V_b=\int_a^b\pmb E\cdot d\pmb l Uab=Va−Vb=∫abEEE⋅dlll
- 场强和电势的微分关系:
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E_x=-\frac{\partial V}{\partial x}...
Ex=−∂x∂V...
常用结论: - 均匀带电直导线: E = λ 2 π ε 0 x sin θ E=\frac{\lambda}{2\pi\varepsilon_0x}\sin\theta E=2πε0xλsinθ
- 均匀带电圆环中轴线上一点的场强: E = q x 4 π ε 0 ( x 2 + R 2 ) 3 / 2 E=\frac{qx}{4\pi\varepsilon_0(x^2+R^2)^{3/2}} E=4πε0(x2+R2)3/2qx
- 均匀带电圆盘轴线上一点: E = σ 2 ε 0 [ 1 − x ( R 2 + x 2 ) 1 / 2 ] E=\frac{\sigma}{2\varepsilon_0}[1-\frac{x}{(R^2+x^2)^{1/2}}] E=2ε0σ[1−(R2+x2)1/2x]
- 均匀带电球壳: E = 0 ( r < R ) E = q 4 π ε 0 r 2 ( r > R ) E=0\ (r<R)\\E=\frac{q}{4\pi\varepsilon_0 r^2}\ (r>R) E=0 (r<R)E=4πε0r2q (r>R)
- 均匀带点球体: E = q 4 π ε 0 R 3 r ( r < R ) E = q 4 π ε 0 r 2 ( r > R ) E=\frac{q}{4\pi\varepsilon_0R^3}\pmb r \ (r<R)\\[2ex]E=\frac{q}{4\pi\varepsilon_0r^2}\ (r>R) E=4πε0R3qrrr (r<R)E=4πε0r2q (r>R)
- 分别均匀带电 q 1 , q 2 q_1,q_2 q1,q2的两个半径为 R 1 R_1 R1和 R 2 R_2 R2的同心球面: E 1 = 0 ( r < R 1 ) E 2 = q 1 4 π ε 0 r 2 ( R 1 < r < R 2 ) E 3 = q 1 + q 2 4 π ε 0 r 2 ( r > R 2 ) E_1=0(r<R_1)\\[2ex] E_2=\frac{q_1}{4\pi\varepsilon_0r^2}\ (R_1<r<R_2)\\[2ex] E_3=\frac{q_1+q_2}{4\pi\varepsilon_0r^2}\ (r>R_2) E1=0(r<R1)E2=4πε0r2q1 (R1<r<R2)E3=4πε0r2q1+q2 (r>R2)
- 半径为R, 线密度为λ的无限长均匀带电圆柱体 E = λ 2 π ε 0 r ( r > R ) E = λ r 2 π ε 0 R 2 ( r < R ) E=\frac{\lambda}{2\pi\varepsilon_0r}\ (r>R)\\[2ex] E=\frac{\lambda r}{2\pi\varepsilon_0R^2}\ (r<R) E=2πε0rλ (r>R)E=2πε0R2λr (r<R)
静电场中的电介质
- 在导体板间充满电介质时, 两板间电势差为 U = U 0 ε r E = E 0 ε r U=\frac{U_0}{\varepsilon_r}\ \ \ \ \ E=\frac{E_0}{\varepsilon_r} U=εrU0 E=εrE0
- 紧靠导体表面处的电场强度: E = σ ε 0 E=\frac{\sigma}{\varepsilon_0} E=ε0σ
- 极化电荷密度: σ ′ = ( 1 − 1 ε r ) σ 0 \sigma'=(1-\frac{1}{\varepsilon_r})\sigma_0 σ′=(1−εr1)σ0
- 电位移矢量: D = ε 0 ε r E = ε E \pmb D=\varepsilon_0\varepsilon_r\pmb E=\varepsilon\pmb E DDD=ε0εrEEE=εEEE
- 高斯定理: ∮ S D ⋅ d S = ∑ i q 0 i \oint_S\pmb D\cdot d\pmb S=\sum_i q_{0i} ∮SDDD⋅dSSS=i∑q0i
- 电容器的电容: C = q V A − V B C=\frac{q}{V_A-V_B} C=VA−VBq
- 电场能量密度: w e = 1 2 ε E 2 = 1 2 D E w_e=\frac{1}{2}\varepsilon E^2=\frac{1}{2}DE we=21εE2=21DE
- 电场总能量: W e = ∫ v w e d V = ∫ v 1 2 ε E 2 d V W_e=\int_v w_e dV=\int_v\frac{1}{2}\varepsilon E^2dV We=∫vwedV=∫v21εE2dV
- 电容器能量: W e = q 2 2 C = 1 2 C U 2 W_e=\frac{q^2}{2C}=\frac{1}{2}CU^2 We=2Cq2=21CU2
稳恒电流的磁场
- 电流源矢量: I d l Id\pmb l Idlll
- 磁场强度: B = d F I d l sin θ B=\frac{dF}{Idl\sin\theta} B=IdlsinθdF
- 比奥-萨伐尔定律: d B = μ 0 4 π I d l sin θ r 2 dB=\frac{\mu_0}{4\pi}\frac{Idl\sin\theta}{r^2} dB=4πμ0r2Idlsinθ
- 有限长直导线磁场: B = μ 0 I 4 π a ( cos θ 1 − cos θ 2 ) B=\frac{\mu_0 I}{4\pi a}(\cos\theta_1-\cos\theta_2) B=4πaμ0I(cosθ1−cosθ2)
- 载流线圈轴线上磁感应强度: B = μ 0 2 R 2 I ( x 2 + R 2 ) 3 / 2 B=\frac{\mu_0}{2}\frac{R^2I}{(x^2+R^2)^{3/2}} B=2μ0(x2+R2)3/2R2I
- 安培环路定理: ∮ L B ⋅ d l = μ 0 ∑ L I i \oint_L \pmb B\cdot d\pmb l = \mu_0\sum_L I_i ∮LBBB⋅dlll=μ0L∑Ii
- 磁力的功: A = ∫ ϕ m 1 ϕ m 2 I d ϕ m = I Δ ϕ m A=\int_{\phi_{m1}}^{\phi_{m2}}Id\phi_{m}=I\Delta\phi_m A=∫ϕm1ϕm2Idϕm=IΔϕm
- 磁偶极子在外磁场中的势能: U = − m ⋅ B U=-\pmb m\cdot \pmb B U=−mmm⋅BBB
- 霍尔效应: U a b = K I B d = 1 n q I B d U_{ab}=K\frac{IB}{d}=\frac{1}{nq}\frac{IB}{d} Uab=KdIB=nq1dIB
- 磁通量: ϕ m = ∫ s B ⋅ d S \phi_m=\int_s\pmb B\cdot d\pmb S ϕm=∫sBBB⋅dSSS
- 高斯定理: ∮ S B ⋅ d S = 0 \oint_S\pmb B\cdot d\pmb S=0 ∮SBBB⋅dSSS=0
- d I = d q ⋅ v dI=dq\cdot v dI=dq⋅v
磁介质
- 磁场强度矢量: H = B μ = B μ 0 μ r H=\frac{B}{\mu}=\frac{B}{\mu_0\mu_r} H=μB=μ0μrB
- 有磁介质时的安培环路定理: ∮ L H ⋅ l = ∑ L I 传 \oint_L \pmb H\cdot \pmb l=\sum_L I_传 ∮LHHH⋅lll=L∑I传