sentaurus学习 GaN Hemt 仿真案例

由于影响本征器件工作特性的主要外部因素之一是源、漏极串联电阻𝑅𝑠和𝑅𝑑，在此核心模型验证中通过缩短𝐿sg和𝐿gd的长度，使得串联电阻的影响可忽略。同时用于 TCAD 仿真的器件沟道长度应尽可能的大，这样沟道长度调制效应对漏极电流的影响将可忽略。

 为便于仿真在器件底部成核层采用二氧化硅材料代替 AlN材料。缓冲层上面生成一层较薄的沟道层，通常采用不掺杂沟道层以便进一步提升二维电子气的迁移率，在核心模型的仿真验证工作中，将采用与缓冲层一样的低掺杂浓度。

GaN HEMT 本征器件仿真参数表

 

TCAD 仿真验证的 GaN HEMT 器件结构示意图，

 定义模块参数

(sde:clear)
;-------------------------------------------------------------------------------------
; Use DF-ISE coordinate system for structure generation
(sde:set-process-up-direction "+z")

;---------------------------------------------------------------------------
; Some control parameters
;---------------------------------------------------------------------------
(define tSiN_passivation 0.05)
(define tGaN_cap 	0.003)
(define NGaN_cap	1E18)
(define tAlGaN_spacer	0.002)
(define tAlGaN		0.02)
(define NAlGaN		@NAlGaN@)
(define xAlGaN		0.25)
(define tGaN_channel	1)
(define NGaN_channel	1E15)
(define tSiC		0.01)
(define tSD		    0.9 ) 

(define Lsg		0.01)
(define Lgd		0.01)
(define Lg		1)
(define Ls		0.1)
(define Ld		0.1)

;---------------------------------------------------------------------------
; Derived parameters
;---------------------------------------------------------------------------
; Vertical coordinates
(define Ytop 0.0)
(define Y0_SiN_passivation Ytop)
(define Y0_GaN_cap (+ Y0_SiN_passivation tSiN_passivation))
(define Y0_AlGaN_barrier (+ Y0_GaN_cap tGaN_cap))
(define Y0_GaN_channel (+ Y0_AlGaN_barrier tAlGaN))
(define Y0_AlGaN_spacer (- Y0_GaN_channel tAlGaN_spacer))
(define Y0_SiC_substrate (+ Y0_GaN_channel tGaN_channel))
(define Ybot (+ Y0_SiC_substrate tSiC))

; Horizontal coordinates
(define Xmax (+ Ls Lsg Lg Lgd Ld))
(define Xmin 0)
(define Xsrc Ls)
(define Xgt.l (+ Xsrc Lsg))
(define Xgt.r (+ Xgt.l Lg))
(define Xdrn (+ Xgt.r Lgd))

创建结构

;---------------------------------------------------------------------------
; Build epi structure
;---------------------------------------------------------------------------
; Passivation
(sdegeo:create-rectangle 
  (position 0 Y0_SiN_passivation 0) (position Xmax Y0_GaN_cap 0) 
  "Nitride" "SiN_passivation" 
)
(sdedr:define-refinement-size "Ref.SiN_passivation" 99 0.0125 66 0.01 )
(sdedr:define-refinement-region "Ref.SiN_passivation" "Ref.SiN_passivation" "SiN_passivation")

; GaN cap
(sdegeo:create-rectangle 
  (position 0 Y0_GaN_cap 0) (position Xmax Y0_AlGaN_barrier 0) 
  "GaN" "GaN_cap" 
)
(sdedr:define-constant-profile "ndop_GaN_cap_const" "ArsenicActiveConcentration" NGaN_cap)
(sdedr:define-constant-profile-region "ndop_GaN_cap_const" "ndop_GaN_cap_const" "GaN_cap")

; AlGaN barrier
(sdegeo:create-rectangle 
  (position 0 Y0_AlGaN_barrier 0) (position Xmax Y0_AlGaN_spacer 0) 
  "AlGaN" "AlGaN_barrier" 
)
(sdedr:define-constant-profile "ndop_AlGaN_barrier_const" "ArsenicActiveConcentration" NAlGaN)
(sdedr:define-constant-profile-region "ndop_AlGaN_barrier_const" "ndop_AlGaN_barrier_const" "AlGaN_barrier")
(sdedr:define-constant-profile "xmole_AlGaN_barrier_const" "xMoleFraction" xAlGaN)
(sdedr:define-constant-profile-region "xmole_AlGaN_barrier_const" "xmole_AlGaN_ba