sentaurus学习 GaN Hemt 仿真案例

最新推荐文章于 2024-06-20 17:10:44 发布

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最新推荐文章于 2024-06-20 17:10:44 发布

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由于影响本征器件工作特性的主要外部因素之一是源、漏极串联电阻𝑅𝑠和𝑅𝑑，在此核心模型验证中通过缩短𝐿sg和𝐿gd的长度，使得串联电阻的影响可忽略。同时用于 TCAD 仿真的器件沟道长度应尽可能的大，这样沟道长度调制效应对漏极电流的影响将可忽略。

为便于仿真在器件底部成核层采用二氧化硅材料代替 AlN材料。缓冲层上面生成一层较薄的沟道层，通常采用不掺杂沟道层以便进一步提升二维电子气的迁移率，在核心模型的仿真验证工作中，将采用与缓冲层一样的低掺杂浓度。

定义模块参数

(sde:clear)
;-------------------------------------------------------------------------------------
; Use DF-ISE coordinate system for structure generation
(sde:set-process-up-direction "+z")

;---------------------------------------------------------------------------
; Some control parameters
;---------------------------------------------------------------------------
(define tSiN_passivation 0.05)
(define tGaN_cap 	0.003)
(define NGaN_cap	1E18)
(define tAlGaN_spacer	0.002)
(define tAlGaN		0.02)
(define NAlGaN		@NAlGaN@)
(define xAlGaN		0.25)
(define tGaN_channel	1)
(define NGaN_channel	1E15)
(define tSiC		0.01)
(define tSD		    0.9 ) 

(define Lsg		0.01)
(define Lgd		0.01)
(define Lg		1)
(define Ls		0.1)
(define Ld		0.1)

;---------------------------------------------------------------------------
; Derived parameters
;---------------------------------------------------------------------------
; Vertical coordinates
(define Ytop 0.0)
(define Y0_SiN_passivation Ytop)
(define Y0_GaN_cap (+ Y0_SiN_passivation tSiN_passivation))
(define Y0_AlGaN_barrier (+ Y0_GaN_cap tGaN_cap))
(define Y0_GaN_channel (+ Y0_AlGaN_barrier tAlGaN))
(define Y0_AlGaN_spacer (- Y0_GaN_channel tAlGaN_spacer))
(define Y0_SiC_substrate (+ Y0_GaN_channel tGaN_channel))
(define Ybot (+ Y0_SiC_substrate tSiC))

; Horizontal coordinates
(define Xmax (+ Ls Lsg Lg Lgd Ld))
(define Xmin 0)
(define Xsrc Ls)
(define Xgt.l (+ Xsrc Lsg))
(define Xgt.r (+ Xgt.l Lg))
(define Xdrn (+ Xgt.r Lgd))

创建结构

;---------------------------------------------------------------------------
; Build epi structure
;---------------------------------------------------------------------------
; Passivation
(sdegeo:create-rectangle 
  (position 0 Y0_SiN_passivation 0) (position Xmax Y0_GaN_cap 0) 
  "Nitride" "SiN_passivation" 
)
(sdedr:define-refinement-size "Ref.SiN_passivation" 99 0.0125 66 0.01 )
(sdedr:define-refinement-region "Ref.SiN_passivation" "Ref.SiN_passivation" "SiN_passivation")

; GaN cap
(sdegeo:create-rectangle 
  (position 0 Y0_GaN_cap 0) (position Xmax Y0_AlGaN_barrier 0) 
  "GaN" "GaN_cap" 
)
(sdedr:define-constant-profile "ndop_GaN_cap_const" "ArsenicActiveConcentration" NGaN_cap)
(sdedr:define-constant-profile-region "ndop_GaN_cap_const" "ndop_GaN_cap_const" "GaN_cap")

; AlGaN barrier
(sdegeo:create-rectangle 
  (position 0 Y0_AlGaN_barrier 0) (position Xmax Y0_AlGaN_spacer 0) 
  "AlGaN" "AlGaN_barrier" 
)
(sdedr:define-constant-profile "ndop_AlGaN_barrier_const" "ArsenicActiveConcentration" NAlGaN)
(sdedr:define-constant-profile-region "ndop_AlGaN_barrier_const" "ndop_AlGaN_barrier_const" "AlGaN_barrier")
(sdedr:define-constant-profile "xmole_AlGaN_barrier_const" "xMoleFraction" xAlGaN)
(sdedr:define-constant-profile-region "xmole_AlGaN_barrier_const" "xmole_AlGaN_barrier_const" "AlGaN_barrier")
(sdedr:define-refinement-size "Ref.AlGaN_barrier" 99 0.002 66 0.001 )
(sdedr:define-refinement-region "Ref.AlGaN_barrier" "Ref.AlGaN_barrier" "AlGaN_barrier" )

; AlGaN spacer
(sdegeo:create-rectangle 
  (position 0 Y0_AlGaN_spacer 0) (position Xmax Y0_GaN_channel 0) 
  "AlGaN" "AlGaN_spacer" 
)
(sdedr:define-constant-profile "ndop_AlGaN_spacer_const" "ArsenicActiveConcentration" 1e15)
(sdedr:define-constant-profile-region "ndop_AlGaN_spacer_const" "ndop_AlGaN_spacer_const" "AlGaN_spacer")
(sdedr:define-constant-profile "xmole_AlGaN_spacer_const" "xMoleFraction" xAlGaN)
(sdedr:define-constant-profile-region "xmole_AlGaN_spacer_const" "xmole_AlGaN_spacer_const" "AlGaN_spacer")

; GaN channel
(sdegeo:create-rectangle 
  (position 0 Y0_GaN_channel 0) (position Xmax (+ Y0_GaN_channel 0.005) 0) 
  "GaN" "GaN_channel" 
)
(sdedr:define-constant-profile "ndop_GaN_channel_const" "ArsenicActiveConcentration" 1e15)
(sdedr:define-constant-profile-region "ndop_GaN_channel_const" "ndop_GaN_channel_const" "GaN_channel")

; GaN buffer
(sdegeo:create-rectangle 
  (position 0 (+ Y0_GaN_channel 0.005) 0) (position Xmax Y0_SiC_substrate 0) 
  "GaN" "GaN_buffer" 
)
(sdedr:define-constant-profile "ndop_GaN_buffer_const" "ArsenicActiveConcentration" 1e15)
(sdedr:define-constant-profile-region "ndop_GaN_buffer_const" "ndop_GaN_buffer_const" "GaN_buffer")
(sdedr:define-refinement-size "Ref.GaN_buffer" 99 0.2 66 0.1 )
(sdedr:define-refinement-region "Ref.GaN_buffer" "Ref.GaN_buffer" "GaN_buffer" )

; AlN emulated as Oxide
(sdegeo:create-rectangle 
  (position 0 Y0_SiC_substrate 0) (position Xmax Ybot 0) 
  "Oxide" "SiC_substrate" 
)

定义电极

;---------------------------------------------------------------------------
; "Build" device
;---------------------------------------------------------------------------
(define Ycontact (+ Y0_GaN_cap 0.04))

(define src.metal (sdegeo:create-rectangle 
  (position 0 Ytop 0) (position Xsrc Ycontact 0)
  "Metal" "tmp.source" 
))

(define drn.metal (sdegeo:create-rectangle 
  (position Xdrn Ytop 0) (position Xmax Ycontact 0)
  "Metal" "tmp.drain" 
))

(define gt.metal (sdegeo:create-rectangle 
  (position Xgt.l Ytop 0) (position Xgt.r Y0_GaN_cap 0)
  "Metal" "tmp.gate" 
))

; Define electrodes
(sdegeo:define-contact-set "drain")
(sdegeo:set-current-contact-set "drain")
(sdegeo:set-contact-boundary-edges drn.metal)
(sdegeo:delete-region drn.metal)
 
(sdegeo:define-contact-set "source")
(sdegeo:set-current-contact-set "source")
(sdegeo:set-contact-boundary-edges src.metal)
(sdegeo:delete-region src.metal)
 
(sdegeo:define-contact-set "gate")
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-edges gt.metal)
(sdegeo:delete-region gt.metal)

网格划分

;---------------------------------------------------------------------------
; Meshing
;---------------------------------------------------------------------------
; Global
(sdedr:define-refeval-window "Pl.global" "Rectangle"  
		(position 0 Ytop 0) (position Xmax Ybot 0))
(sdedr:define-refinement-size "Ref.global" (/ Xmax 16) (/ Ybot 16) 0.002 0.002)
(sdedr:define-refinement-placement "Ref.global" "Ref.global" "Pl.global")
(sdedr:define-refinement-function "Ref.global" "DopingConcentration" "MaxTransDiff" 1)
(sdedr:define-refinement-function "Ref.global" "MaxLenInt" "GaN" "Nitride" 0.0005 1.8)
(sdedr:define-refinement-function "Ref.global" "MaxLenInt" "GaN" "AlGaN" 0.0004 1.8 "DoubleSide")
(sdedr:define-refinement-function "Ref.global" "MaxLenInt" "GaN" "Oxide" 0.01 2)

; Channel
(sdedr:define-refeval-window "Pl.channel" "Rectangle"  
		(position Xgt.l Ytop 0) (position Xgt.r (+ Y0_GaN_channel 0.1) 0))
(sdedr:define-refinement-size "Ref.channel" (/ Lg 8) 99 0.004 66)
(sdedr:define-refinement-placement "Ref.channel" "Ref.channel" "Pl.channel")
(sdedr:define-refinement-function "Ref.channel" "MaxLenInt" "GaN" "" 0.0005 1.8)

; Electron spreading
(sdedr:define-refeval-window "Pl.eDensity" "Rectangle"  
  (position (- Xgt.r 0.4) Y0_GaN_cap 0) (position (+ Xgt.r 0.6) (+ Y0_GaN_channel 0.5) 0))
(sdedr:define-refinement-size "Ref.eDensity" 0.05 0.05 0.01 0.01)
(sdedr:define-refinement-placement "Ref.eDensity" "Ref.eDensity" "Pl.eDensity")

; Ungated drain
(sdedr:define-refeval-window "Pl.ungated.d" "Rectangle"  
  (position Xgt.r Y0_GaN_cap 0) (position Xdrn (+ Y0_GaN_channel 0.4) 0))
(sdedr:define-refinement-size "Ref.ungated.d" (/ Lgd 16) 99 (/ Lgd 32) 66)
(sdedr:define-refinement-placement "Ref.ungated.d" "Ref.ungated.d" "Pl.ungated.d")

; Ungated source
(sdedr:define-refeval-window "Pl.ungated.s" "Rectangle"  
  (position Xsrc Y0_GaN_cap 0) (position Xgt.l (+ Y0_GaN_channel 0.2) 0))
(sdedr:define-refinement-size "Ref.ungated.s" (/ Lsg 4) 99 (/ Lsg 8) 66)
(sdedr:define-refinement-placement "Ref.ungated.s" "Ref.ungated.s" "Pl.ungated.s")

; Drain contact edge
(sdedr:define-refeval-window "Pl.drain_c" "Rectangle"  
		(position (- Xdrn 0.1) Ytop 0) (position (+ Xdrn 0.06) Y0_GaN_channel 0))
(sdedr:define-refinement-size "Ref.drain_c" 0.01 99 0.002 66)
(sdedr:define-refinement-placement "Ref.drain_c" "Ref.drain_c" "Pl.drain_c")

 (sdedr:define-refeval-window "Pl.drain_c.t" "Rectangle"  
 		(position (- Xdrn 0.015) Y0_GaN_channel 0) (position Xmax (+ Ycontact 0.005) 0))
 (sdedr:define-refinement-size "Ref.drain_c.t" 0.1 0.05 0.002 0.002)
 (sdedr:define-refinement-placement "Ref.drain_c.t" "Ref.drain_c.t" "Pl.drain_c.t")

 (sdedr:define-refeval-window "Pl.drain_c.t2" "Rectangle"  
 		(position (- Xdrn 0.012) Y0_GaN_channel 0) (position Xdrn (+ Y0_GaN_channel 0.012) 0))
 (sdedr:define-refinement-size "Ref.drain_c.t2" 0.001 0.002 0.0005 0.001)
 (sdedr:define-refinement-placement "Ref.drain_c.t2" "Ref.drain_c.t2" "Pl.drain_c.t2")

; Source contact edge
(sdedr:define-refeval-window "Pl.source_c" "Rectangle"  
		(position (- Xsrc 0.04) Ytop 0) (position (+ Xsrc 0.04) Y0_GaN_channel 0))
(sdedr:define-refinement-size "Ref.source_c" 0.04 99 0.004 66)
(sdedr:define-refinement-placement "Ref.source_c" "Ref.source_c" "Pl.source_c" )

 (sdedr:define-refeval-window "Pl.source_c.t" "Rectangle"  
		(position Xmin Y0_GaN_cap 0) (position (+ Xsrc 0.015) (+ Ycontact 0.005) 0))
 (sdedr:define-refinement-size "Ref.source_c.t" 0.1 0.05 0.002 0.002)
 (sdedr:define-refinement-placement "Ref.source_c.t" "Ref.source_c.t" "Pl.source_c.t")

 (sdedr:define-refeval-window "Pl.source_c.t2" "Rectangle"  
		(position Xsrc Y0_GaN_channel 0) (position (+ Xsrc 0.012) (+ Y0_GaN_channel 0.012) 0))
 (sdedr:define-refinement-size "Ref.source_c.t2" 0.001 0.002 0.0005 0.001)
 (sdedr:define-refinement-placement "Ref.source_c.t2" "Ref.source_c.t2" "Pl.source_c.t2")

; Right gate contact edge
(sdedr:define-refeval-window "Pl.contact_r" "Rectangle"  
		(position (- Xgt.r 0.02) Ytop 0) (position (+ Xgt.r 0.02) (+ Y0_GaN_channel 0.005) 0))
(sdedr:define-refinement-size "Ref.contact_r" 0.005 99 0.001 66)
(sdedr:define-refinement-placement "Ref.contact_r" "Ref.contact_r" "Pl.contact_r")

; Left gate contact edge
(sdedr:define-refeval-window "Pl.contact_l" "Rectangle"  
		(position (- Xgt.l 0.02) Ytop 0) (position (+ Xgt.l 0.024) Y0_GaN_channel 0))
(sdedr:define-refinement-size "Ref.contact_l" 0.004 99 0.002 66)
(sdedr:define-refinement-placement "Ref.contact_l" "Ref.contact_l" "Pl.contact_l")


;---------------------------------------------------------------------------
(sde:build-mesh "-H" "n@node@")
;---------------------------------------------------------------------------

IdVd曲线仿真



Electrode {
        { Name="gate"   Voltage= (0 at 0, @vs@  at 10,@vs@  at 20) Schottky Workfunction= 4.3 }
        { Name="source" Voltage= 0 EqOhmic }
        { Name="drain"  Voltage= (0 at 0, 0 at 10, 8 at 20) EqOhmic }
}


File {
	Grid= "@tdr@"
	Parameter= "@parameter@"
	
	Current= "@plot@"
	Plot= "@tdrdat@"
	Output= "@log@"

	
}

Physics {
	AreaFactor= 1000 					* So that currents are given in A/mm
	Temperature=300
	Mobility (
		DopingDependence(Masetti) 
		Highfieldsaturation
	)
	EffectiveIntrinsicDensity (Nobandgapnarrowing)
	Fermi
	Recombination(
		SRH
	)
	Piezoelectric_Polarization (strain(GateDependent))
	Aniso(Poisson direction=(0, 0, 1))
	#Thermionic

	DefaultParametersFromFile			* Use parameter files within the MaterialDB 
										* directory to determine defaults.
}

# Example of Fermi level pinning surface trap
#Physics (MaterialInterface="AlGaN/Nitride") {
#	Traps(
#		(Donor Level Conc= 5e13 EnergyMid= 0.4 FromMidBandGap)
#	)
#}

#Physics (MaterialInterface="GaN/SiO2") {
#	PiezoElectric_Polarization(activation= 0)
#}




Plot {
	Electricfield/Vector
	eCurrent/Vector hCurrent/Vector TotalCurrent/Vector
	
	SRH Avalanche
	eMobility hMobility
	eGradQuasiFermi hGradQuasiFermi
	eEparallel hEparallel
	
	eVelocity hVelocity
	DonorConcentration Acceptorconcentration
	Doping SpaceCharge
	ConductionBand ValenceBand eQuasiFermiEnergy hQuasiFermiEnergy
	BandGap Affinity
	xMoleFraction
	
	PE_Polarization/Vector
	PE_Charge
	ConversePiezoelectricField/Tensor
	
#	eBarrierTunneling
}

Math {
	Extrapolate
	Iterations= 12
	DirectCurrentComputation

	EquilibriumSolution(Iterations= 1000)
	ExtendedPrecision
	Digits= 8
	RHSMin= 1e-8
	
	eDrForceRefDens= 1e8 
	hDrForceRefDens= 1e8
	
	CNormPrint
	NewtonPlot (
	  Error MinError
	  Residual
	)
	
}

Plot {
    NonLocal
    Electricfield/Vector
    eCurrent/Vector hCurrent/Vector TotalCurrent/Vector

    SRH
    eMobility hMobility
    eQuasiFermiEnergy hQuasiFermiEnergy
    eGradQuasiFermi/Vector hGradQuasiFermi/Vector
    eEparallel hEparallel
    eVelocity/Vector hVelocity/Vector

    Doping DonorConcentration Acceptorconcentration
    SpaceCharge
    ConductionBand ValenceBand
    BandGap Affinity
    xMoleFraction

    PE_Polarization/Vector
    PE_Charge PiezoCharge
    eTrappedCharge eInterfaceTrappedCharge
    hTrappedCharge hInterfaceTrappedCharge
    ConversePiezoelectricField/Tensor
    eBarrierTunneling hBarrierTunneling
    OpticalGeneration
    StressXX StressXY StressYY StressYZ StressZZ StressXZ
    LatticeTemperature eTemperature hTemperature
    eAvalanche hAvalanche
}

Solve {
	Coupled (Iterations= 10000 LinesearchDamping= 1e-5) {Poisson}

         Transient(
 	InitialTime=0 InitialStep= 0.01 Minstep= 1e-6 Increment= 1.1 Decrement= 1.2 MaxStep= 0.25 FinalTime=10
 	) { Coupled {Poisson Electron Hole } }


      NewCurrentFile="IdVd_"

  	Transient(
 	InitialTime=10 InitialStep= 0.01 Minstep= 1e-6 Increment= 1.1 Decrement= 1.2 MaxStep= 0.25 FinalTime=20
 	) { Coupled {Poisson Electron Hole } }
}

IdVg



Electrode {
        { Name="gate"   Voltage= (0 at 0, -5  at 10 , 0  at 20) Schottky Workfunction= 4.3 }
        { Name="source" Voltage= 0  EqOhmic }
        { Name="drain"  Voltage= (0 at 0, @Vd@ at 10, @Vd@ at 20) EqOhmic }
}


File {
	Grid= "@tdr@"
	Parameter= "@parameter@"
	
	Current= "@plot@"
	Plot= "@tdrdat@"
	Output= "@log@"

	
}

Physics {
	AreaFactor= 1000 					* So that currents are given in A/mm
	Temperature=300
	Mobility (
		DopingDependence(Masetti) 
		Highfieldsaturation
	)
	EffectiveIntrinsicDensity (Nobandgapnarrowing)
	Fermi
	Recombination(
		SRH
	)
	Piezoelectric_Polarization (strain(GateDependent))
	Aniso(Poisson direction=(0, 0, 1))
	#Thermionic

	DefaultParametersFromFile			* Use parameter files within the MaterialDB 
										* directory to determine defaults.
}

# Example of Fermi level pinning surface trap
#Physics (MaterialInterface="AlGaN/Nitride") {
#	Traps(
#		(Donor Level Conc= 5e13 EnergyMid= 0.4 FromMidBandGap)
#	)
#}

#Physics (MaterialInterface="GaN/SiO2") {
#	PiezoElectric_Polarization(activation= 0)
#}





Plot {
	Electricfield/Vector
	eCurrent/Vector hCurrent/Vector TotalCurrent/Vector
	
	SRH Avalanche
	eMobility hMobility
	eGradQuasiFermi hGradQuasiFermi
	eEparallel hEparallel
	
	eVelocity hVelocity
	DonorConcentration Acceptorconcentration
	Doping SpaceCharge
	ConductionBand ValenceBand eQuasiFermiEnergy hQuasiFermiEnergy
	BandGap Affinity
	xMoleFraction
	
	PE_Polarization/Vector
	PE_Charge
	ConversePiezoelectricField/Tensor
	
#	eBarrierTunneling
}

Math {
	Extrapolate
	Iterations= 12
	DirectCurrentComputation

	EquilibriumSolution(Iterations= 1000)
	ExtendedPrecision
	Digits= 8
	RHSMin= 1e-8
	
	eDrForceRefDens= 1e8 
	hDrForceRefDens= 1e8
	
	CNormPrint
	NewtonPlot (
	  Error MinError
	  Residual
	)
	
}

Plot {
    NonLocal
    Electricfield/Vector
    eCurrent/Vector hCurrent/Vector TotalCurrent/Vector

    SRH
    eMobility hMobility
    eQuasiFermiEnergy hQuasiFermiEnergy
    eGradQuasiFermi/Vector hGradQuasiFermi/Vector
    eEparallel hEparallel
    eVelocity/Vector hVelocity/Vector

    Doping DonorConcentration Acceptorconcentration
    SpaceCharge
    ConductionBand ValenceBand
    BandGap Affinity
    xMoleFraction

    PE_Polarization/Vector
    PE_Charge PiezoCharge
    eTrappedCharge eInterfaceTrappedCharge
    hTrappedCharge hInterfaceTrappedCharge
    ConversePiezoelectricField/Tensor
    eBarrierTunneling hBarrierTunneling
    OpticalGeneration
    StressXX StressXY StressYY StressYZ StressZZ StressXZ
    LatticeTemperature eTemperature hTemperature
    eAvalanche hAvalanche
}

Solve {
	Coupled (Iterations= 10000 LinesearchDamping= 1e-5) {Poisson}

         Transient(
 	InitialTime=0 InitialStep= 0.01 Minstep= 1e-6 Increment= 1.1 Decrement= 1.2 MaxStep= 0.25 FinalTime=10
 	) { Coupled {Poisson Electron Hole } }


      NewCurrentFile="IdVg_"

  	Transient(
 	InitialTime=10 InitialStep= 0.01 Minstep= 1e-6 Increment= 1.1 Decrement= 1.2 MaxStep= 0.25 FinalTime=20
 	) { Coupled {Poisson Electron Hole } }
}

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sentaurus学习 GaN Hemt 仿真案例

由于影响本征器件工作特性的主要外部因素之一是源、漏极串联电阻𝑅𝑠和𝑅𝑑，在此核心模型验证中通过缩短𝐿sg和𝐿gd的长度，使得串联电阻的影响可忽略。同时用于 TCAD 仿真的器件沟道长度应尽可能的大，这样沟道长度调制效应对漏极电流的影响将可忽略。为便于仿真在器件底部成核层采用二氧化硅材料代替 AlN材料。缓冲层上面生成一层较薄的沟道层，通常采用不掺杂沟道层以便进一步提升二维电子气的迁移率，在核心模型的仿真验证工作中，将采用与缓冲层一样的低掺杂浓度。
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