2022-5-8 19:40:31
2022-5-10 19:06:10
2022-5-11 08:01:09
2022-5-12 21:33:59
2022-5-13 19:45:29
2022-5-15 20:15:04
1、设计步骤
▶
\blacktriangleright
▶设计参数
√
\surd
√电网频率:
f
0
f_0
f0
√
\surd
√变压器工作频率:
f
s
w
f_{sw}
fsw
√
\surd
√变压器效率:
η
\eta
η
√
\surd
√最大占空比:
D
m
a
x
<
0.5
D_{max}<0.5
Dmax<0.5,否则会发生谐波振荡
√
\surd
√输入交流电压范围:
V
a
c
M
i
n
∥
V
a
c
M
a
x
V_{acMin}\Vert V_{acMax}
VacMin∥VacMax
√
\surd
√整流桥导通时间
t
c
t_c
tc
√
\surd
√输入电容:
C
i
n
C_{in}
Cin
√
\surd
√输出电压:
V
o
u
t
V_{out}
Vout
√
\surd
√输出电流:
I
o
u
t
I_{out}
Iout
√
\surd
√纹波系数:
D
C
M
:
K
=
0.4
;
C
C
M
:
K
=
0.3
∼
0.5
DCM:K=0.4;CCM:K=0.3\sim0.5
DCM:K=0.4;CCM:K=0.3∼0.5
√
\surd
√输出电流:
D
C
M
:
I
D
C
=
D
(
I
p
k
−
Δ
I
2
)
,
I
A
C
=
(
I
p
k
−
Δ
I
2
)
D
(
1
−
D
)
;
C
C
M
:
I
D
C
=
I
p
k
D
2
,
I
A
C
=
I
p
k
D
3
−
D
2
4
→
I
R
M
S
=
I
D
C
2
+
I
A
C
2
DCM:I_{DC} = D(I_{pk}-\frac{\Delta I}{2}),I_{AC} = (I_{pk}-\frac{\Delta I}{2})\sqrt{D(1-D)};CCM:I_{DC} = \frac{I_{pk}D}{2},I_{AC}=I_{pk}\sqrt{\frac{D}{3}-\frac{D^2}{4}}\to I_{RMS}=\sqrt{I_{DC}^2+I_{AC}^2}
DCM:IDC=D(Ipk−2ΔI),IAC=(Ipk−2ΔI)D(1−D);CCM:IDC=2IpkD,IAC=Ipk3D−4D2→IRMS=IDC2+IAC2
√
\surd
√输出二极管压降:
U
s
d
=
0.7
V
U_{sd}=0.7V
Usd=0.7V
√
\surd
√损耗分配系数:
α
\alpha
α
▶
\blacktriangleright
▶初级侧参数计算:
▹
\triangleright
▹输入电容:
C
i
n
=
2
∼
3
μ
F
/
W
,
85
∼
265
V
A
C
;
C
i
n
=
1
μ
F
/
W
,
176
∼
256
V
A
C
C_{in}=2\sim3\mu F/W,85\sim 265VAC;C_{in}=1\mu F/W,176\sim256VAC
Cin=2∼3μF/W,85∼265VAC;Cin=1μF/W,176∼256VAC
▹
\triangleright
▹最低直流输入电压:
V
i
n
M
i
n
=
(
2
V
a
c
M
i
n
)
2
−
2
V
o
u
t
I
o
u
t
(
1
/
2
f
0
−
t
c
)
η
C
i
n
V_{inMin}=\sqrt{(\sqrt2V_{acMin})^2-\frac{2V_{out}I_{out}(1/2f_0-t_c)}{\eta C_{in}}}
VinMin=(2VacMin)2−ηCin2VoutIout(1/2f0−tc)
▹
\triangleright
▹最高直流输入电压:
V
i
n
M
a
x
=
2
×
V
a
c
M
a
x
V_{inMax}=\sqrt2\times V_{acMax}
VinMax=2×VacMax
▹
\triangleright
▹输入功率:
P
i
n
=
(
V
o
u
t
×
I
o
u
t
)
/
η
P_{in}=(V_{out}\times I_{out})/\eta
Pin=(Vout×Iout)/η
▹
\triangleright
▹输入电流均值:
I
i
n
A
v
g
=
P
i
n
/
V
i
n
M
i
n
I_{inAvg}=P_{in}/V_{inMin}
IinAvg=Pin/VinMin
▹
\triangleright
▹初级感量:
L
p
=
(
V
i
n
M
i
n
×
D
m
a
x
)
2
2
×
P
i
n
×
f
s
w
×
K
L_p=\frac{( V_{inMin}\times D_{max})^2}{2\times P_{in}\times f_{sw}\times K}
Lp=2×Pin×fsw×K(VinMin×Dmax)2
L
p
=
V
o
u
t
I
o
u
t
×
1
0
6
I
p
k
2
K
(
1
−
K
2
)
f
s
w
×
α
(
1
−
η
)
+
η
η
L_p=\frac{V_{out}I_{out}\times 10^6}{I_{pk}^2K(1-\frac{K}{2})f_{sw}}\times\frac{\alpha(1-\eta)+\eta}{\eta}
Lp=Ipk2K(1−2K)fswVoutIout×106×ηα(1−η)+η
▹
\triangleright
▹输入电流峰值:
I
p
k
=
I
i
n
A
v
g
(
1
−
K
/
2
)
D
m
a
x
I_{pk}=\frac{I_{inAvg}}{(1-K/2)D_{max}}
Ipk=(1−K/2)DmaxIinAvg
▹
\triangleright
▹纹波电流:
Δ
I
=
I
p
k
×
K
\Delta I=I_{pk}\times K
ΔI=Ipk×K
▹
\triangleright
▹原边电流有效值:
I
R
M
S
=
D
m
a
x
(
I
p
k
2
−
I
p
k
Δ
I
+
Δ
I
3
)
I_{RMS}=\sqrt{D_{max}(I_{pk}^2-I_{pk}\Delta I+\frac{\Delta I}{3})}
IRMS=Dmax(Ipk2−IpkΔI+3ΔI)
▹
\triangleright
▹工作模式:
∗
\ast
∗DCM:次级整流二极管零电流关断,开关特性较好,且储能较少,需要尺寸较小,但初级电流RMS较大,MOS导通损耗高,且输出电容电流应力较大,适用于高压小电流
∗
\ast
∗CCM:适用于低压大电流
▶
\blacktriangleright
▶反射电压:
V
r
=
D
m
a
x
1
−
D
m
a
x
×
V
i
n
M
i
n
V_{r}=\frac{D_{max}}{1-D_{max}}\times V_{inMin}
Vr=1−DmaxDmax×VinMin
▶
\blacktriangleright
▶次级二极管承受最大电压:
V
s
d
=
V
i
n
M
a
x
V
r
×
V
o
u
t
+
V
o
u
t
V_{sd}=\frac{V_{inMax}}{V_r}\times V_{out}+V_{out}
Vsd=VrVinMax×Vout+Vout
▶
\blacktriangleright
▶MOS承受最大电压:
V
d
s
M
a
x
=
V
i
n
M
a
x
+
V
r
V_{dsMax}=V_{inMax}+V_r
VdsMax=VinMax+Vr
▶
\blacktriangleright
▶磁芯选择及设计:
▹
\triangleright
▹设计功率及安装尺寸
→
\to
→磁芯类型
⇒
\Rightarrow
⇒
B
s
&
A
e
&
A
w
&
V
e
B_s\&A_e\&A_w\&V_e
Bs&Ae&Aw&Ve
▹
B
m
=
0.2
T
\triangleright B_m=0.2T
▹Bm=0.2T
▹
A
P
=
A
e
×
A
w
=
(
1.2
L
p
I
o
u
t
I
R
M
S
B
m
(
T
e
s
l
a
)
β
)
4
3
,
(
β
=
0.0085
)
\triangleright AP=A_e\times A_w=(\frac{1.2L_pI_{out}I_{RMS}}{B_m(Tesla)\beta})^{\frac{4}{3}},(\beta=0.0085)
▹AP=Ae×Aw=(Bm(Tesla)β1.2LpIoutIRMS)34,(β=0.0085)
▹
N
p
=
L
p
×
I
p
k
B
s
×
A
e
\triangleright N_p=\frac{L_p\times I_{pk}}{B_s\times A_e}
▹Np=Bs×AeLp×Ipk
▹
n
=
V
r
V
o
u
t
+
U
s
d
\triangleright n=\frac{V_r}{V_{out}+U_{sd}}
▹n=Vout+UsdVr
▹
N
s
=
N
p
/
n
\triangleright N_s=N_p/n
▹Ns=Np/n
▹
D
m
a
x
=
n
×
(
V
o
u
t
+
V
f
)
2
×
V
i
n
M
i
n
+
n
∗
(
V
o
u
t
+
V
f
)
\triangleright D_{max}=\frac{n\times(V_{out}+V_f)}{\sqrt2\times V_{inMin}+n*(V_{out}+V_f)}
▹Dmax=2×VinMin+n∗(Vout+Vf)n×(Vout+Vf)
▹
l
g
=
0.4
π
×
N
p
2
×
A
e
(
c
m
2
)
×
1
0
−
8
L
p
−
l
e
(
c
m
)
μ
\triangleright l_g=\frac{0.4\pi\times N_p^2\times A_e(cm^2)\times 10^{-8}}{L_p} - \frac{l_e(cm)}{\mu}
▹lg=Lp0.4π×Np2×Ae(cm2)×10−8−μle(cm)
▹
B
s
=
0.4
×
π
×
44
×
I
p
k
×
1
0
−
4
l
g
(
c
m
)
+
l
e
(
c
m
)
μ
\triangleright B_s=\frac{0.4\times\pi\times 44\times I_{pk}\times10^{-4}}{l_g(cm)+\frac{l_e(cm)}{\mu}}
▹Bs=lg(cm)+μle(cm)0.4×π×44×Ipk×10−4
∗
\ast
∗变压器同时充当电感,从而磁芯工作于直流偏置状态,为避免磁芯饱和而引入气隙(气隙使得磁滞回曲线斜率降低,从而在相同直流状态下的磁通密度降低)
▶
\blacktriangleright
▶绕组选择:
▹
j
=
4
A
/
m
m
2
\triangleright j=4A/mm^2
▹j=4A/mm2
▹
S
w
i
r
e
=
I
i
n
R
M
S
/
j
\triangleright S_{wire}=I_{inRMS}/j
▹Swire=IinRMS/j
▹
\triangleright
▹三明治绕制以减少漏感
▶
\blacktriangleright
▶损耗:
▹
\triangleright
▹绕组损耗
1)直流损耗:
R
d
c
=
ρ
×
l
/
S
w
i
r
e
⇒
P
d
c
=
I
i
n
A
v
g
2
×
R
d
c
R_{dc}=\rho\times l/S_{wire}\Rightarrow P_{dc}=I_{inAvg}^2\times R_{dc}
Rdc=ρ×l/Swire⇒Pdc=IinAvg2×Rdc
2)交流损耗:
Q
=
0.83
d
d
/
S
w
i
r
e
Δ
⇒
F
r
⇒
R
a
c
=
R
d
c
×
F
r
∥
I
a
c
=
I
R
M
S
2
−
I
i
n
A
v
g
2
⇒
P
a
c
=
I
a
c
2
×
R
a
c
Q=\frac{0.83d\sqrt{d/S_{wire}}}{\Delta}\Rightarrow F_r\Rightarrow R_{ac}=R_{dc}\times F_r\Vert I_{ac}=\sqrt{I_{RMS}^2-I_{inAvg}^2}\Rightarrow P_{ac}=I_{ac}^2\times R_{ac}
Q=Δ0.83dd/Swire⇒Fr⇒Rac=Rdc×Fr∥Iac=IRMS2−IinAvg2⇒Pac=Iac2×Rac
▹
\triangleright
▹磁芯损耗
1)峰值磁通摆幅:
Δ
B
=
B
s
K
2
\Delta B=\frac{B_sK}{2}
ΔB=2BsK
2)磁芯损耗:
P
c
o
r
e
=
p
c
v
×
V
e
P_{core}=p_{cv}\times V_e
Pcore=pcv×Ve
★
\bigstar
★实例:
1、设计参数
∙
V
i
∈
{
80
∼
240
}
V
\bullet V_i\in\{80\sim240\}V
∙Vi∈{80∼240}V
∙
K
=
0.4
\bullet K = 0.4
∙K=0.4
∙
D
m
a
x
=
0.45
\bullet D_{max} = 0.45
∙Dmax=0.45
∙
η
=
0.9
\bullet \eta = 0.9
∙η=0.9
∙
f
0
=
50
H
z
\bullet f_0 = 50Hz
∙f0=50Hz
∙
t
s
=
3
m
s
\bullet t_s = 3ms
∙ts=3ms
∙
C
i
n
=
47
μ
F
\bullet C_{in} = 47\mu F
∙Cin=47μF
∙
U
s
d
=
0.7
V
\bullet U_sd = 0.7V
∙Usd=0.7V
∙
f
s
w
=
100
K
H
z
\bullet f_{sw} = 100KHz
∙fsw=100KHz
∙
B
s
=
0.2
T
\bullet B_s = 0.2T
∙Bs=0.2T
∙
P
o
∈
{
12
V
/
1.8
W
,
120
V
/
43.2
W
}
\bullet P_{o}\in \{12V/1.8W,120V/43.2W\}
∙Po∈{12V/1.8W,120V/43.2W}
∙
A
L
=
3600
±
25
%
\bullet A_L = 3600 \pm 25\%
∙AL=3600±25%
∙
A
e
=
98
m
m
2
\bullet A_e = 98mm^2
∙Ae=98mm2
∙
A
w
=
260
m
m
2
\bullet A_ w = 260mm^2
∙Aw=260mm2
∙
l
e
=
44
m
m
\bullet l_e = 44mm
∙le=44mm
∙
V
e
=
4310
m
m
3
\bullet V_e = 4310mm^3
∙Ve=4310mm3
东磁磁芯链接
2、参数计算
∙
V
i
n
M
i
n
=
2
×
8
0
2
−
2
×
45
(
1
100
−
0.003
)
0.9
×
47
μ
=
117.9
V
\bullet V_{inMin} = \sqrt{2\times 80^2-\frac{2\times 45(\frac{1}{100} - 0.003)}{0.9\times 47\mu}} = 117.9V
∙VinMin=2×802−0.9×47μ2×45(1001−0.003)=117.9V
∙
V
i
n
M
a
x
=
2
×
240
=
339.4
V
\bullet V_{inMax} = \sqrt2\times 240 = 339.4V
∙VinMax=2×240=339.4V
∙
P
i
n
=
45
/
0.9
=
50
W
\bullet P_{in} = 45/0.9 = 50W
∙Pin=45/0.9=50W
∙
I
i
n
A
v
g
=
0.42
A
\bullet I_{inAvg} = 0.42A
∙IinAvg=0.42A
∙
L
p
=
729
μ
H
\bullet L_p = 729\mu H
∙Lp=729μH
∙
I
p
k
=
0.42
0.45
×
(
1
−
0.4
2
)
=
1.17
A
\bullet I_{pk} = \frac{0.42}{0.45\times(1-\frac{0.4}{2})} = 1.17A
∙Ipk=0.45×(1−20.4)0.42=1.17A
∙
Δ
I
=
0.4
×
1.17
=
0.47
A
\bullet \Delta I = 0.4\times 1.17 = 0.47A
∙ΔI=0.4×1.17=0.47A
∙
I
R
M
S
=
0.45
(
1.1
7
2
−
1.17
×
0.47
+
0.47
3
)
=
0.66
A
\bullet I_{RMS} = \sqrt{0.45(1.17^2 - 1.17\times 0.47 + \frac{0.47}{3})} = 0.66A
∙IRMS=0.45(1.172−1.17×0.47+30.47)=0.66A
∙
V
r
=
0.45
1
−
0.45
×
117.9
=
96.7
V
\bullet V_r = \frac{0.45}{1-0.45}\times 117.9 = 96.7V
∙Vr=1−0.450.45×117.9=96.7V
∙
V
s
d
1
=
339.4
96.7
×
120
+
120
=
542
V
\bullet V_{sd1} = \frac{339.4}{96.7}\times 120 + 120 = 542V
∙Vsd1=96.7339.4×120+120=542V
∙
V
s
d
2
=
339.4
96.7
×
12
+
12
=
54
V
\bullet V_{sd2} = \frac{339.4}{96.7}\times 12 + 12 = 54V
∙Vsd2=96.7339.4×12+12=54V
∙
V
m
o
s
=
339.4
+
96.7
=
436
V
\bullet V_{mos} = 339.4 + 96.7 = 436V
∙Vmos=339.4+96.7=436V
∙
n
1
=
96.7
120
+
0.7
=
0.8
\bullet n_1 = \frac{96.7}{120 + 0.7} = 0.8
∙n1=120+0.796.7=0.8
∙
n
2
=
96.7
12
+
0.7
=
7.6
\bullet n_2 = \frac{96.7}{12 + 0.7} = 7.6
∙n2=12+0.796.7=7.6
∙
A
P
=
1.2
×
729
μ
×
0.46
×
0.66
0.2
×
0.0085
=
0.16
c
m
4
\bullet AP = \frac{1.2\times 729\mu \times 0.46\times0.66}{0.2\times 0.0085} = 0.16 cm^4
∙AP=0.2×0.00851.2×729μ×0.46×0.66=0.16cm4
∙
N
p
=
729
μ
×
1.17
0.2
×
98
=
44
\bullet N_p = \frac{729\mu\times1.17}{0.2\times 98} = 44
∙Np=0.2×98729μ×1.17=44
∙
N
s
1
=
55
,
N
s
2
=
6
\bullet N_{s1} = 55,N_{s2} = 6
∙Ns1=55,Ns2=6
∙
D
m
a
x
1
=
0.8
×
(
120
+
0.7
)
2
×
117.9
+
0.8
×
(
120
+
0.7
)
=
0.36
,
D
m
a
x
2
=
7.6
×
12.7
2
t
i
m
e
s
117.9
+
7.6
×
12.7
=
0.37
\bullet D_{max1} = \frac{0.8\times (120 + 0.7)}{\sqrt2\times 117.9 + 0.8\times(120 + 0.7)} = 0.36,D_{max2} = \frac{7.6\times12.7}{\sqrt2 times 117.9+7.6\times12.7} = 0.37
∙Dmax1=2×117.9+0.8×(120+0.7)0.8×(120+0.7)=0.36,Dmax2=2times117.9+7.6×12.77.6×12.7=0.37
∙
l
g
=
0.4
×
π
×
4
4
2
×
0.98
×
1
0
−
8
0.000729
−
l
e
μ
=
0.03
c
m
\bullet l_g = \frac{0.4\times\pi\times44^2\times0.98\times 10^{-8}}{0.000729}-\frac{l_e}{\mu} = 0.03cm
∙lg=0.0007290.4×π×442×0.98×10−8−μle=0.03cm
∙
B
s
=
0.4
×
π
×
N
p
×
1.17
×
1
0
−
4
l
g
+
4.4
3600
=
0.21
T
\bullet B_s=\frac{0.4\times\pi\times N_p\times 1.17\times10^{-4}}{l_g+\frac{4.4}{3600}}=0.21T
∙Bs=lg+36004.40.4×π×Np×1.17×10−4=0.21T
∙
S
w
i
r
e
=
0.66
/
4
=
0.165
m
m
2
⇒
d
w
i
r
e
=
0.23
m
m
\bullet S_{wire} = 0.66/4 = 0.165mm^2\Rightarrow d_{wire} = 0.23mm
∙Swire=0.66/4=0.165mm2⇒dwire=0.23mm
∙
S
w
i
r
e
1
=
0.36
/
4
=
0.09
m
m
2
⇒
d
w
i
r
e
1
=
0.17
m
m
\bullet S_{wire1} = 0.36/4 = 0.09mm^2\Rightarrow d_{wire1} = 0.17mm
∙Swire1=0.36/4=0.09mm2⇒dwire1=0.17mm
∙
S
w
i
r
e
2
=
0.15
/
4
=
0.0375
m
m
2
⇒
d
w
i
r
e
2
=
0.12
m
m
\bullet S_{wire2} = 0.15/4 = 0.0375mm^2\Rightarrow d_{wire2} = 0.12mm
∙Swire2=0.15/4=0.0375mm2⇒dwire2=0.12mm