国民技术N32G430内部FLASH模拟EEPROM，巧妙减少擦写次数，延长flash寿命。

最新推荐文章于 2023-07-22 10:33:20 发布

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最新推荐文章于 2023-07-22 10:33:20 发布

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文章标签：单片机 c语言

本文链接：https://blog.csdn.net/weixin_42401119/article/details/128400772

版权

eeprom.c

#include "eeprom.h"

u8  test_bytedata1=0;
u16 test_intdata1=0;
u32 test_worddata1=0;
float test_floatdata1=0.0;

const FLASH_DATA_typedef		FLASH_DATA_SAVE	__attribute__((at(d_FLASH_DATA_ADDRESS)));		

vu16		R_Flash_i;

u8	R_0xA5=0xA5;
u8	R_0xFF=0xFF;
u8	R_0x5A=0x5A;

u8 *const FLASH_Data[]={
	&R_0xA5,
	&test_bytedata1,
	(u8 *)&test_intdata1,
	(u8 *)((u8 *)&test_intdata1+1),
	(u8 *)&test_worddata1,
	(u8 *)((u8 *)&test_worddata1+1),
	(u8 *)((u8 *)&test_worddata1+2),
	(u8 *)((u8 *)&test_worddata1+3),
	(u8 *)&test_floatdata1,
	(u8 *)((u8 *)&test_floatdata1+1),
	(u8 *)((u8 *)&test_floatdata1+2),
	(u8 *)((u8 *)&test_floatdata1+3),
	&R_0x5A,
	&R_0x5A,
	&R_0x5A,
	&R_0x5A,
};

void Erase_Flash_Page(u32 FLASH_DATA_ADDRESS)
{
	FLASH_Unlock();
	if(FLASH_EOP != FLASH_One_Page_Erase(FLASH_DATA_ADDRESS))
		while(1);
	FLASH_Lock();
}

void EEPROMData_Check(void)
{
	u8 i=0,j=0;
	u8 data_error=0;
	
	
	if((test_bytedata1<10)||(test_bytedata1>250))
		data_error=1;
	if((test_intdata1<10)||(test_intdata1>250))
		data_error=1;
	if((test_worddata1<10)||(test_worddata1>250))
		data_error=1;
	
	if(data_error)
	{
		Erase_Flash_Page(d_FLASH_DATA_ADDRESS);
		R_Flash_i=0;
		test_bytedata1=10;
		test_intdata1=11;
		test_worddata1=12;
		FLASH_Unlock();
		for(i=0;i<d_FLASH_Data_maxWord;i++)
		{
			j=i*4;
			FLASH_Word_Prog