分离栅VDMOS

最新推荐文章于 2024-04-09 23:09:59 发布

Srambler

最新推荐文章于 2024-04-09 23:09:59 发布

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1、器件结构

分离栅VDMOS是在传统沟槽栅VDMOS的基础上将栅极分为两段，底部的栅极和源极接相同电位，从而屏蔽了部分栅漏间的电容。该结构有助于减小Miller电容，提高器件的开关速度。

2、工艺流程

分离栅VDMOS的简要工艺流程如下图所示，实际工艺中将包含更多细节：

1) 衬底---> 2) 外延---> 3) 表面氧化---> 4) 光刻氧化层定位沟槽---> 5) 硅刻蚀---> 6) 进一步硅刻蚀---> 7) 去除氧化物---> 8) 沟槽氧化---> 9) 多晶硅淀积---> 10) 多晶硅刻蚀---> 11) 氧化物刻蚀---> 12) 栅氧生长---> 13) 多晶硅淀积---> 14) 多晶硅刻蚀---> 15) P掺杂注入---> 16) 退火激活---> 17) N掺杂注入---> 18) 退火激活---> 19) 氧化物淀积---> 20) 光刻氧化层定位源接触---> 21) 硅刻蚀---> 22) 源极金属淀积

Sentaurus sprocess 工艺仿真代码如下：

## ------------------------------------------------------------------------
## Split-Gate VDMOS Device Process Simulation
## ------------------------------------------------------------------------

mgoals accuracy= 1e-5
math coord.ucs
pdbSet Grid SnMesh min.normal.size 0.005
pdbSet Grid SnMesh normal.growth.ratio.2d 1.5
pdbSet Grid SnMesh max.lateral.size 1.0
      
refinebox interface.materials= Silicon

pdbSet Grid Adaptive 1
pdbSet Grid Min.Adaptive.Temp 1200.0
refinebox name= Global adaptive Silicon \
refine.min.edge= "0.01 0.01" refine.max.edge= "1.0 1.0" \
abs.error=       "Boron=1e15 Arsenic=5e16 Phosphorus=1e15" \
rel.error=       "Boron=0.20 Arsenic=0.20 Phosphorus=0.20" \
max.dose.error=  "Boron=1e10 Arsenic=1e10 Phosphorus=1e10"

pdbSet Oxide Grid perp.add.dist 5.0e-7 
pdbSet Silicon Grid Remove.Dist 2.0e-8
pdbSet Grid NativeLayerThickness 1.0e-7

pdbSet Diffuse dThickness 6.0e-3

AdvancedCalibration

mask name= m_trench   segments= {0.8 1.2}  negative
mask name= m_contact  segments= {0.0 0.3 1.7 2.0} negative

## -------------------------------------------------------------
line x location= 0.0<um>  spacing= 0.2<um> tag= top
line x location= 1.0<um>  spacing= 0.2<um>
line x location= 4.0<um>  spacing= 0.5<um> tag= bottom

line y location= 0.0<um>  spacing= 0.2<um> tag= left
line y location= 2.0<um>  spacing= 0.2<um> tag= right

region Silicon xlo= top xhi= bottom ylo= left yhi= right substrate
init Silicon field=Phosphorus concentration= 1e19 wafer.orient=100 !DelayFullD

struct tdr=1_init

refinebox name= ref_int min.normal.size= 0.1 normal.growth.ratio= 5.0 \
	  interface.materials = { Silicon } min= { -1.0 0.0 } max= { 1.0 2.0 }
	  
## Epitaxy N-drift layer 
temp_ramp name= ramp_drift temperature= 550 t.final= 700 time=1<min>
temp_ramp name= ramp_drift t.final= 700 time= 5<min> Epi thick= 6<um> \
	  epi.doping = { phosphorus= 2e16 } 
diffuse temp.ramp= ramp_drift

struct tdr=2_epi

### Oxide deposition of 100 nm thick            
deposit oxide thickness= 0.1 isotropic

struct tdr=3_oxide

### trench etching ###
etch oxide thickness=0.11 anisotropic mask= m_trench

struct tdr=4_etch

## Directional etching of Silicon to produce angled trenches
etch time= 3 type= trapezoidal material= Silicon rate= 1.0 angle=89

struct tdr=5_etch

etch time= 1 type= isotropic material= Silicon rate= 0.1

struct tdr=6_etch

strip oxide
grid remesh

struct tdr=7_etch

##-- Gate Oxidation
temp_ramp name= GateOx time= 80  temperature= 700  t.final= 1100
temp_ramp name= GateOx time= 10  temperature= 1100 t.final= 1100
temp_ramp name= GateOx time= 40  temperature= 1100 t.final= 1100 pressure= 1 flowO2= 12
temp_ramp name= GateOx time= 10  temperature= 1100 t.final= 1100
temp_ramp name= GateOx time= 120 temperature= 1100 t.final= 700

diffuse temp_ramp= GateOx

struct tdr=8_oxide

## Polysilicon Deposition
deposit polysilicon type=isotropic thickness=1.0 \
temperature=580 species= Phosphorus concentration= 1.0e19

struct tdr=9_poly

etch polysilicon type= cmp coord= -5.2

struct tdr=10_etch

etch oxide type= cmp coord= -5.2

struct tdr=11_etch

##-- Gate Oxidation
temp_ramp name= GateOx1 time= 80  temperature= 700  t.final= 1100
temp_ramp name= GateOx1 time= 10  temperature= 1100 t.final= 1100
temp_ramp name= GateOx1 time= 15  temperature= 1100 t.final= 1100 pressure= 1 flowO2= 12
temp_ramp name= GateOx1 time= 10  temperature= 1100 t.final= 1100
temp_ramp name= GateOx1 time= 120 temperature= 1100 t.final= 700

diffuse temp_ramp= GateOx1

struct tdr=12_oxide

## Polysilicon Deposition
deposit polysilicon type=isotropic thickness=1.0 \
temperature=580 species= Phosphorus concentration= 1.0e19

struct tdr=13_poly

etch time= 10 type= isotropic material= polysilicon rate= 0.1

struct tdr=14_etch

## Pwell
implant Boron dose= 1.0e13 energy= 80

struct tdr=15_imp

temp_ramp name= ramp_npwell time= 10.0<min> temp= 700.0<C> t.final= 850.0<C>
temp_ramp name= ramp_npwell time= 1.0<min> temp= 850.0<C> t.final= 850.0<C>
temp_ramp name= ramp_npwell time= 10.0<min> temp= 850.0<C> t.final= 700.0<C>
diffuse temp_ramp= ramp_npwell

struct tdr=16_anneal

## Nplus
implant Arsenic dose= 4.0e15 energy= 80

struct tdr=17_imp

temp_ramp name= ramp_nplus time= 10.0<min> temp= 700.0<C> t.final= 850.0<C>
temp_ramp name= ramp_nplus time= 1.0<min> temp= 850.0<C> t.final= 850.0<C>
temp_ramp name= ramp_nplus time= 10.0<min> temp= 850.0<C> t.final= 700.0<C>
diffuse temp_ramp= ramp_nplus

struct tdr=18_anneal

## Oxide Deposition
deposit oxide type=isotropic thickness=0.2

struct tdr=19_oxide

etch oxide thickness=0.3 anisotropic mask= m_contact

struct tdr=20_etch

etch silicon thickness=0.2 anisotropic

struct tdr=21_etch

deposit Aluminum type=isotropic thickness=0.5

struct tdr=22_metal

## Contact definitions 
contact name= gate region= PolySilicon_2 !replace
contact name= source region= PolySilicon_1 !replace
contact name= source1 region= Aluminum_1 !replace
contact name= drain box Silicon xlo= 3.9 xhi= 4.1 ylo= -0.1 yhi= 2.1

struct smesh= 23_final