sentaurus学习2024.10.14-sde

;(sde:clear)
(sde:set-process-up-direction "+z")
(define depth @depth@)
(define EpiDoping @EpiDoping@)
(define SiCTop 100.0)
(define Radius 0.1)
(define epsilon 0.01)

(sdeicwb:load-file "mask_lyt.mac" 1e-3 )  
(sdeicwb:set-domain "SIM3D")
(define minx (sdeicwb:get-left))
(define maxx (sdeicwb:get-right))
(define maxy (sdeicwb:get-front))
(define miny (sdeicwb:get-back))
(display "icwb: SimBox: L=") (display minx)
(display              " R=") (display maxx)
(display              " B=") (display miny)
(display              " F=") (display maxy) (newline)
(define LNames (sdeicwb:get-layer-names)) ; list layer Names
(display "icwb: LNames: ") (display LNames) (newline)
(define LIDs   (sdeicwb:get-layer-ids)) ; list layer ids
(display "icwb: LIDs: ") (display LIDs) (newline)

;#-----Define pe domain -----------------------------------------------------;#
(sdepe:define-pe-domain (list minx   miny  maxx   maxy) )

(sdepe:add-substrate "material" "SiliconCarbide" "thickness" SiCTop)

(sdeicwb:generate-mask-by-layer-name "ACTIVE" "ACTIVE")
(sdepe:pattern "mask" "ACTIVE" "polarity" "light" "material" "Photoresist" "thickness" 1.0 "type" "iso")
(sdepe:etch-material "material" "SiliconCarbide" "depth" depth "type" "aniso" "algorithm" "lopx" "overetch" 0.1 "vexity" "all" "radius" Radius)

(sdepe:strip-material "Photoresist" )
(sdepe:depo "material" "Oxide" "thickness" 0.05)
(sdepe:fill-device "material" "Polysilicon")

(sdeicwb:generate-mask-by-layer-name "EMITTER" "EMITTER")
(sdepe:pattern "mask" "EMITTER" "polarity" "dark" "material" "Photoresist" "thickness" 0.2)
(sdepe:etch-material "material" "Oxide" "depth" 0.1 "type" "aniso" )
(sdepe:remove "material" "Photoresist" )

(sdepe:fill-device "material" "Metal" )
(sdepe:etch-material "material" "Oxide" "depth" 0.05 "type" "iso" "algorithm" "lopx" )

;#----- Contact --------------------------------------------------------------;#

(define POINT (position (/ maxx 2.0) (/ maxy 2.0) (sdeicwb:get-global-bot)))
(sdegeo:define-contact-set "collector"  4.0  (color:rgb 0.0 0.0 1.0 ) "##" )
(sdegeo:set-current-contact-set "collector")
(sdegeo:define-3d-contact (find-face-id POINT) "collector")

(sdegeo:define-contact-set "gate"  4.0  (color:rgb 1.0 0.0 0.0 ) "##" )
(sdegeo:set-current-contact-set "gate")
(sdegeo:set-contact-boundary-faces (find-body-id (position (- maxx epsilon) (- maxy epsilon) SiCTop)))
(sdegeo:delete-region (find-body-id (position (- maxx epsilon) (- maxy epsilon) SiCTop)))

(sdegeo:define-contact-set "emitter"  4.0  (color:rgb 0.0 1.0 0.0 ) "##" )
(sdegeo:set-current-contact-set "emitter")
(define CONTACT (find-body-id (car (sdeicwb:get-layer-polygon-midpoints
"EMITTER" (sdeicwb:up SiCTop epsilon)))))
(sdegeo:set-contact-boundary-faces CONTACT)
(sdegeo:delete-region CONTACT)

;#----- Doping ---------------------------------------------------------------;#
;#----- n- epi -----;#
(define NAME "Nepi")
(sdedr:define-refeval-window (string-append "RW." NAME)
    "Cuboid"  
    (position minx miny 97.5)  (position  maxx maxy 0.5) )
(sdedr:define-constant-profile (string-append "DC." NAME)
    "NitrogenActiveConcentration"  @EpiDoping@)
(sdedr:define-constant-profile-placement (string-append "CPP." NAME)
    (string-append "DC." NAME) (string-append "RW." NAME))
;#----- n+ bottom -----;#
(define NAME "N+bottom" )
(sdedr:define-refeval-window (string-append "RW." NAME)
    "Cuboid"  
    (position minx miny 0.5)  (position  maxx maxy 0.0) )
(sdedr:define-constant-profile (string-append "DC." NAME)
    "AluminumActiveConcentration"  1e20)
(sdedr:define-constant-profile-placement (string-append "CPP." NAME)
    (string-append "DC." NAME) (string-append "RW." NAME))
;#----- p+ channel -----;#
(define NAME "P+channel" )
(sdedr:define-refeval-window (string-append "RW." NAME)
    "Cuboid"  
    (position minx miny 99.5)  (position  maxx maxy 97.5) )
(sdedr:define-constant-profile (string-append "DC." NAME)
    "AluminumActiveConcentration"  4e17)
(sdedr:define-constant-profile-placement (string-append "CPP." NAME)
    (string-append "DC." NAME) (string-append "RW." NAME))
;#----- n+ top -----;#
(define NAME "N+top" )
(sdedr:define-refeval-window (string-append "RW." NAME)
    "Cuboid"  
    (position minx miny 100)  (position  maxx maxy 99.5) )
(sdedr:define-constant-profile (string-append "DC." NAME)
    "NitrogenActiveConcentration"  1e20)
(sdedr:define-constant-profile-placement (string-append "CPP." NAME)
    (string-append "DC." NAME) (string-append "RW." NAME))
;#----- p+ top -----;#
(define NAME "P+top" )
(sdedr:define-refeval-window (string-append "RW." NAME)
    "Cuboid"  
    (position minx miny 100)  (position  1 1 99.5) )
(sdedr:define-constant-profile (string-append "DC." NAME)
    "AluminumActiveConcentration"  2e20)
(sdedr:define-constant-profile-placement (string-append "CPP." NAME)
    (string-append "DC." NAME) (string-append "RW." NAME))

;#----- Mesh -----------------------------------------------------------------;#

(sdeicwb:define-refinement-from-layer
"lname" "BASE" "rname" "WholeDevice" "oversize" 0.0 "top" SiCTop "bot" 0
"dlrmax" 1.0 "dlrmin" 0.05
"dbtmax" 1.0 "dbtmin" 0.05
"dbfmax" 1.0 "dbfmin" 0.05)
(sdedr:define-refinement-function "RSize.WholeDevice" "DopingConcentration" "MaxTransDiff" 1.0)

(sdeicwb:define-refinement-from-layer
"lname" "BASE" "rname" "Channel" "oversize" 0.0 "top" SiCTop "bot" (sdeicwb:down SiCTop (+ depth 1.0))
"dlrmax" 0.3 "dlrmin" 0.01
"dbtmax" 0.3 "dbtmin" 0.01
"dbfmax" 0.3 "dbfmin" 0.01)
(sdedr:define-refinement-function "RSize.Channel" "DopingConcentration" "MaxTransDiff" 1.0)

(sdeicwb:define-refinement-from-layer
"lname" "TRENCH1" "rname" "trench1" "oversize" 0.5 "top" (sdeicwb:down SiCTop (- depth 0.5)) "bot" (sdeicwb:down SiCTop (+ depth 0.5))
"dlrmax" 0.15 "dlrmin" 0.01
"dbtmax" 0.15 "dbtmin" 0.01
"dbfmax" 0.15 "dbfmin" 0.01)
(sdedr:define-refinement-function "RSize.trench1" "DopingConcentration" "MaxTransDiff" 1.0)

(sdeicwb:define-refinement-from-layer
"lname" "TRENCH2" "rname" "trench2" "oversize" 0.5 "top" (sdeicwb:down SiCTop (- depth 0.5)) "bot" (sdeicwb:down SiCTop (+ depth 0.5))
"dlrmax" 0.15 "dlrmin" 0.01
"dbtmax" 0.15 "dbtmin" 0.01
"dbfmax" 0.15 "dbfmin" 0.01)
(sdedr:define-refinement-function "RSize.trench2" "DopingConcentration" "MaxTransDiff" 1.0)

(sdedr:offset-global
 "hlocal" 0
 "factor" 1.2
 "maxlevel" 6)
 
(sdedr:offset-interface "material" "SiliconCarbide" "Oxide" "hlocal" 0.005 "factor" 1.4 )

(sde:build-mesh "-offset " "n@node@" )

;#----- save -----------------------------------------------------------------;#在sentaurus里什么意思，列出每一行代码进行说明

这段代码是用于Sentaurus Device（SDE）的脚本，用于设置和模拟半导体器件的制造过程。下面是每一行代码的详细说明：

1. `(sde:clear)`：清除SDE中的所有先前数据，为新的模拟做准备。

2. `(sde:set-process-up-direction "+z")`：设置模拟中的加工方向为Z轴正方向。

3. `(define depth @depth@)`：定义一个变量`depth`，其值由外部参数`@depth@`提供，可能表示某种加工深度。

4. `(define EpiDoping @EpiDoping@)`：定义一个变量`EpiDoping`，其值由外部参数`@EpiDoping@`提供，可能表示外延层的掺杂浓度。

5. `(define SiCTop 100.0)`：定义一个变量`SiCTop`，值为100.0，可能表示硅碳化物（SiC）层的厚度。

6. `(define Radius 0.1)`：定义一个变量`Radius`，值为0.1，可能用于后续的刻蚀或沉积步骤中定义圆角或半径。

7. `(define epsilon 0.01)`：定义一个变量`epsilon`，值为0.01，用于定义微小的距离或公差。

8. `(sdeicwb:load-file "mask_lyt.mac" 1e-3)`：加载掩模布局文件`mask_lyt.mac`，文件中的单位为米（1e-3米=1毫米）。

9. `(sdeicwb:set-domain "SIM3D")`：设置模拟域为3D。

10. `(define minx (sdeicwb:get-left))`：获取模拟区域的左边界坐标，并赋值给变量`minx`。

11. `(define maxx (sdeicwb:get-right))`：获取模拟区域的右边界坐标，并赋值给变量`maxx`。

12. `(define maxy (sdeicwb:get-front))`：获取模拟区域的前边界坐标，并赋值给变量`maxy`。

13. `(define miny (sdeicwb:get-back))`：获取模拟区域的后边界坐标，并赋值给变量`miny`。

14-18. 这些行在控制台上输出模拟区域的边界信息、层名称和层ID。

19. `(sdepe:define-pe-domain (list minx miny maxx maxy))`：定义一个工艺工程（PE）域，使用之前定义的边界坐标。

20. `(sdepe:add-substrate "material" "SiliconCarbide" "thickness" SiCTop)`：在PE域中添加一种材料，这里是硅碳化物，厚度为`SiCTop`。

21-25. 这些行生成了一个名为"ACTIVE"的掩模，并进行了光刻胶图案化，然后刻蚀硅碳化物材料到指定深度。

26. `(sdepe:strip-material "Photoresist")`：去除光刻胶材料。

27. `(sdepe:depo "material" "Oxide" "thickness" 0.05)`：沉积0.05微米厚的氧化物材料。

28. `(sdepe:fill-device "material" "Polysilicon")`：用多晶硅填充器件。

29-33. 这些行生成了一个名为"EMITTER"的掩模，进行了光刻胶图案化，然后刻蚀氧化物材料，最后去除光刻胶。

34-38. 这些行用金属填充器件，并刻蚀氧化物材料。

39-56. 这些行定义了三个接触区域：集电极、栅极和发射极。每个接触区域都有其特定的位置和颜色。

57-86. 这些行定义了掺杂区域和浓度。每个区域都有其特定的位置、掺杂类型和浓度。

87-119. 这些行定义了网格细化，包括整个器件、通道、沟槽1和沟槽2的网格细化。还定义了全局和界面的网格偏移。

120. `(sde:build-mesh "-offset " "n@node@")`：构建网格，其中`"n@node@"`可能是一个外部参数，指定网格的节点数或类型。

最后一行的代码似乎是不完整的，它应该包含保存模拟设置的命令。在Sentaurus中，这通常是通过`(sde:save "filename")`来完成的，其中`"filename"`是你想要保存的文件名。