go athena
line x loc=0 spac=0.01
line x loc=1 spac=0.02
line y loc=0 spac=0.02
line y loc=1 spac=0.05
init c.boron=1e12 orient=100 two.d
deposit oxide thick=0.5 div=10
etch oxide left p1.x=0.7
#structure outfile=diffuse0.str
structure mirror right
diffuse c.phos=1e20 time=60 temp=1000
#implant phos dose=1e12 energy=100 tilt=7 rotation=0
#diuffuse time=180 temp=1000 t.final=800 nitrogen
extract name="xj" xj material="Silicon" mat.occno=1
structure outfile=diffuse.str
tonyplot diffuse.str
*****************************************
本节课第一个小练习
go athena
line x loc=0 spac=0.02
line x loc=1 spac=0.02
line y loc=0 spac=0.01
line y loc=0.5 spac=0.02
line y loc=1 spac=0.05
init c.boron=2e15 orient=110 two.d
diffuse time=30 hour temp=1000 c.phos=2e15
extract name="xj" xj material="Silicon" mat.occno=1
structure outfile=diffuse.str
tonyplot diffuse.str
******************************
******************************
沉积的命令及参数
go athena
line x loc=0.0 spac=0.02
line x loc=1.0 spac=0.10
line y loc=0.0 spac=0.02
line y loc=2.0 spac=0.20
init silicon c.boron=1e16 two.d
deposit oxide thick=0.1
dy=0.01 ydy=0.05
tonyplot
************************
************************
沉积的命令及参数
go athena
line x loc=0.0 spac=0.02
line x loc=1.0 spac=0.10
line y loc=0.0 spac=0.02
line y loc=2.0 spac=0.20
init silicon c.boron=1e16 two.d
deposit oxide thick=0.1 div=10
deposit oxide thick=0.1 dy=0.06 ydy=0.05
***************************
***************************
沉积案例
go athena
line x loc=0 spac=0.05
line x loc=0.5 spac=0.05
line y loc=0 spac=0.05
line y loc=0.5 spac=0.5
init two.d
structure outfile=pre_depo.str
deposit nitride thick=0.1 div=10
etch nitride right p1.x=0.3
structure mirror right
rate.depo machine=MOCVD cvd dep.rate=0.1 u.m Aluminum step.cov=0.5
deposit machine=MOCVD time=1 minute div=20
structure outfile=elite_depo.str
tonyplot elite_depo.str
*****************************
go athena
line x loc=0.0 spac=0.02
line x loc=1.0 spac=0.10
line y loc=0.0 spac=0.02
line y loc=2.0 spac=0.20
Init two.d
relax x.max=0.5 y.min=0.1 dir.x=T
tonyplot
go athena
line x loc=0.0 spac=0.02
line x loc=1.0 spac=0.10
line y loc=0.0 spac=0.02
line y loc=2.0 spac=0.20
Init two.d
deposit oxide thick=0.1 divisions=4
structure outfile=original.str
structure flip.y
structure outfile=structure_flip.str
tonyplot original.str structure_flip.str
quit
go athena
line x loc=0.0 spac=0.02
line x loc=1.0 spac=0.10
line y loc=0.0 spac=0.02
line y loc=2.0 spac=0.20
Init two.d
deposit polysilicon thick=0.50 divisions=10 dy=0.1 ydy=0.25
etch poly p1.x=0.3 left
structure outfile=original.str
structure mirror left
structure outfile=structure_mirror.str
tonyplot original.str structure_mirror.str
quit
离子注入
go athena
line x loc=0.0 spac=0.1
line x loc=1.0 spac=0.10
line y loc=0.0 spac=0.02
line y loc=1.5 spac=0.05
Init
deposit oxide thick=0.03 divisions=4
implant phosph dose=1e14 energy=100 tilt=7
structure outfil=analytic_impant.str
tonyplot analytic_impant.str
quit
go athena
#
line x loc =0 spac=0.1
line x loc =0.2 spac=0.006
line x loc =0.4 spac=0.006
line x loc =0.5 spac=0.01
line y loc=0.00 spac=0.002
line y loc=0.2 spac=0.005
line y loc=0.5 spac=0.05
line y loc=0.8 spac=0.15
#
init orientation=100 c.phos=1e14 space.mul=2 two.d
structure outfile =mos1.str
diffus time=30 temp=1000 dryo2 press=1.00 hcl=3
structure outfile =mos2.str
#
etch oxide thick=0.02
#
implant boron dose=8e12 energy=100 pearson
structure outfile =mos3.str
#
diffuse temp=950 time=100 weto2 hcl=3
#
diffus time=50 temp=1000 t.rate=4.000 dryo2 press=0.10 hcl=3
#
diffus time=220 temp=1200 nitro press =1
#
diffus time=90 temp=1200 t.rate=4.444 nitro press =1
structure outfile =mos4.str
#
etch oxide all
#
diffus time=20 temp=1000 dryo2 press=1 hcl=3
#
etch oxide all
diffus time=11 temp=925 dryo2 press=1.00 hcl=3
#extract name=“gateox” thickness oxide mat.occno=1 x.val=0.5
structure outfile =mos5.str
#
implant boron dose=9.5e11 energy=10 pearson
#
depo poly thick=0.2 divi=10
#
etch poly left p1.x=0.35
#
structure outfile =mos6.str
method fermi compress
diffuse time=3 temp=900 weto2 press=1.0
implant phosphor dose=3.0e13 energy=20 pearson
structure outfile =mos7.str
depo oxide thick=0.120 divisions=8
etch oxide dry thick=0.120
implant arsenic dose=5.0e15 energy=50 pearson
method fermi compress
diffuse time=1 temp=900 nitro press=1.0
etch oxide left p1.x=0.2
structure outfile =mos8.str
deposit alumin thick=0.03 divi=2
etch alumin right p1.x=0.18
structure mirror right
structure outfile =mos9.str
electrode name=gate x=0.5 y=0.1
electrode name=source x=0.1
electrode name=drain x=0.9
electrode name=substrate backside
structure outfile =mos92.str
# plot the structure
tonyplot mos*.str
刻蚀例子1
go athena
line x loc=0 spac=0.02
line x loc=1.0 spac=0.10
line y loc=0 spac=0.02
line y loc=2.0 spac=0.20
init c.boron=1e16 two.d
deposit oxide thick=0.1 div=10
deposit silicon thick=0.5 div=10
structure outfile=origin.str
etch silicon left p1.x=0.5
outfile=etch p1x 0.5.str
tonyplot
go athena
init infile=origin.str
etch silicon all
structure outfile=etch_alt.str
tonyplot
光刻仿真的完整例子
go athena
set lay_left=-0.5
set lay_right=0.5
illumination g.line
illum.filter clear.fil circle sigma=0.38
projection na=0.54
pupil.filter clear.fil circle
layout lay.clear x.lo=-2 z.lo=-3 x.hi=$lay_left z.hi=3
layout x.lo=$lay_right z.lo=-3 x.hi=2 z.hi=3
image clear win.x.lo=-1 win.z.lo=-0.5 win.x.hi=1 win.z.hi=0.5 dx=0.05 one.d
structure outfile=mask.str intensity mask
tonyplot mask.str
line x loc=-2 spac=0.05
line x loc=0 spac=0.05
line x loc=2 spac=0.05
line y loc=0 spac=0.05
line y loc=2 spac=0.2
init silicon orient=100 c.boron=1e15 two.d
deposit nitride thick=0.035 div=5
deposit name.resist=AZ1350J thick=.8 divisions=30
rate.dev name.resist=AZ1350J i.line c.dill=0.018
structure outfile=preoptolith.str
tonyplot preoptolith.str
expose dose=240.0 num.refl=10
bake time=30 temp=100
develop kim time=60 steps=6 substeps=24
structure outfile=optolith.str
tonyplot optolith.str
*******************************************
上节课作业
go atlas
mesh
x.mesh loc=0 spac=0.02
x.mesh loc=3 spac=0.02
y.mesh loc=-0.3 spac=0.02
y.mesh loc=2 spac=0.02
region num=1 x.min=1 x.max=2 y.max=0 material=gaas
region num=2 x.max=1 y.max=0 material=air
region num=3 x.min=2 y.max=0 material=air
region num=4 y.min=0 y.max=0.3 material=ingaas x.comp=0.4
region num=5 y.min=0.3 y.max=0.5 material=ingaasp x.comp=0.4 y.comp=0.32
region num=6 y.min=0.5 y.max=1.0 material=ingaas compx.top=0.2 compx.bottom=0.3
region num=7 y.min=1 material=inp
elec num=1 name=athode x.min=1 x.max=2 y.max=-0.3
elec num=2 name=cathode bottom
doping region=1 uniform p.type conc=1e20
doping region=4 uniform p.type conc=1e19
doping region=5 uniform p.type conc=1e18
doping region=6 uniform p.type conc=1e18
doping region=6 gauss n.type conc=1e19 peak=2 char=0.4
save outfile=atltest1.str
tonyplot atltest1.str
本节课作业
go atlas
mesh
x.mesh loc=0 spac=0.5
x.mesh loc=5 spac=0.4
x.mesh loc=7 spac=0.4
x.mesh loc=10 spac=0.2
x.mesh loc=13 spac=0.4
x.mesh loc=15 spac=0.4
x.mesh loc=20 spac=0.5
y.mesh loc=0 spac=0.4
y.mesh loc=4 spac=0.1
y.mesh loc=6 spac=0.1
y.mesh loc=10 spac=0.4
eliminate x.min=9 x.max=11 y.min=4 y.max=6
region num=1 y.max=3 AlGaAs x.comp=0.4 grad.34=1.5
region num=2 y.min=4.5 y.max=5.5 GaAs
region num=3 y.min=7 AlGaAs x.comp=0.4 grad.12=1.5
elec name=athode top
elec name=cathode bottom
doping region=1 guass n.type conc=1e19 peak=1 char=2
doping region=2 uniform p.type conc=1e16
doping region=3 erfc n.type conc=5e19 peak=9 char=2
save outfile=zuoye1.str
tonyplot zuoye1.str
go atlas
mesh
x.mesh loc=0 spac=0.2
x.mesh loc=20 spac=0.2
y.mesh loc=0 spac=2
y.mesh loc=250 spac=2
region number=1 material=silicon x.min=0 x.max=20 y.min=0 y.max=250
electrode name=anode top
electrode name=cathode bottom
doping n.type uniform conc=1e13
doping p.type gauss conc=1e18 peak=0 junc=20
doping n.type gauss conc=1e20 peak=250 junc=220
material material=silicon eg300=1.12 nc300=1e17 nv300=2e15 mun=600 mup=400
save outfile=zuoye2.str
tonyplot zuoye2.str
go athena
line x loc=0.0 spac=0.01
line x loc=1.0 spac=0.02
#
line y loc=0.0 spac=0.02
line y loc=1.0 spac=0.05
#初始化硅衬底,掺杂硼浓度1e12,二维
init orientation=100 c.boron=1e12 space.mul=2
#沉积sio2厚度0.5,10个纵向网格
deposit oxide thick=0.5 div=10
#刻蚀sio2,左边界到x=0.7
echo oxide left p1.x=0.7
#以右边界为对称轴镜像
structure mirror right
#离子注入
implant phos dose=1e15 energy=100 temp=300 tilt=7 rotation=0
#退火工艺1000度,30分钟
diffuse temp=1000 time=30 nitro press=1 hcl=3
tonyplot
go atlas
mesh
x.m l=0 spac=0.15
x.m l=0.8 spac=0.15
x.m l=1.0 spac=0.03
x.m l=1.5 spac=0.12
x.m l=2.0 spac=0.15
y.m l=0.0 spac=0.006
y.m l=0.04 spac=0.006
y.m l=0.06 spac=0.005
y.m l=0.15 spac=0.02
y.m l=0.30 spac=0.02
y.m l=1.0 spac=0.12
region num=1 silicon
electrode num=1 name=emitter left length=0.8
electrode num=2 name=base right length=0.5 y.max=0
electrode num=3 name=collector bottom
doping reg=1 uniform n.type conc=5e15
doping reg=1 gauss n.type conc=1e18 peak=1.0 char=0.2
doping reg=1 gauss p.type conc=1e18 peak=0.05 junct=0.15
doping reg=1 gauss n.type conc=5e19 peak=0.0 junct=0.05 x.right=0.8
doping reg=1 gauss p.type conc=5e19 peak=0.0 char=0.08 x.left=1.5
models conmob fldmob consrh auger print
contact name=emitter n.poly surf.rec
solve init
save outf=bjtex04_0.str
tonyplot bjtex04_0.str
method newton autonr trap
solve vcollector=0.025
solve vcollector=0.1
solve vcollector=0.25 vstep=0.25 vfinal=2 name=collector
solve vbase=0.025
solve vbase=0.1
solve vbase=0.2
log outf=bjtex04_0.log
solve vbase=0.3 vstep=0.05 vfinal=1 name=base
tonyplot bjtex04_0.log
log off
solve init
solve vbase=0.025
solve vbase=0.05
solve vbase=0.1 vstep=0.1 vfinal=0.7 name=base
contact name=base current
solve ibase=1e-6
save outf=bjtex04_1.str master
solve ibase=2e-6
save outf=bjtex04_2.str master
solve ibase=3e-6
save outf=bjtex04_3.str master
solve ibase=4e-6
save outf=bjtex04_4.str master
solve ibase=5e-6
save outf=bjtex04_5.str master
load inf=bjtex04_1.str master
log outf=bjtex04_1.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector
load inf=bjtex04_2.str master
log outf=bjtex04_2.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector
load inf=bjtex04_3.str master
log outf=bjtex04_3.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector
load inf=bjtex04_4.str master
log outf=bjtex04_4.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector
load inf=bjtex04_5.str master
log outf=bjtex04_5.log
solve vcollector=0.0 vstep=0.25 vfinal=5.0 name=collector
tonyplot -overlay bjtex04_1.log bjtex04_2.log bjtex04_3.log bjtex04_4.log bjtex04_5.log
# (c) Silvaco Inc., 2015
go athena
#
line x loc=0.0 spac=0.1
line x loc=0.2 spac=0.006
line x loc=0.4 spac=0.006
line x loc=0.6 spac=0.01
#
line y loc=0.0 spac=0.002
line y loc=0.2 spac=0.005
line y loc=0.5 spac=0.05
line y loc=0.8 spac=0.15
#
init orientation=100 c.phos=1e14 space.mul=2
#pwell formation including masking off of the nwell
#
diffus time=30 temp=1000 dryo2 press=1.00 hcl=3
#
etch oxide thick=0.02
#
#P-well Implant
#
implant boron dose=8e12 energy=100 pears
#
diffus temp=950 time=100 weto2 hcl=3
#
#N-well implant not shown -
#
# welldrive starts here
diffus time=50 temp=1000 t.rate=4.000 dryo2 press=0.10 hcl=3
#
diffus time=220 temp=1200 nitro press=1
#
diffus time=90 temp=1200 t.rate=-4.444 nitro press=1
#
etch oxide all
#
#sacrificial "cleaning" oxide
diffus time=20 temp=1000 dryo2 press=1 hcl=3
#
etch oxide all
#
#gate oxide grown here:-
diffus time=11 temp=925 dryo2 press=1.00 hcl=3
#
# Extract a design parameter
extract name="gateox" thickness oxide mat.occno=1 x.val=0.05
#
#vt adjust implant
implant boron dose=9.5e11 energy=10 pearson
#
depo poly thick=0.2 divi=10
#
#from now on the situation is 2-D
#
etch poly left p1.x=0.35
#
method fermi compress
diffuse time=3 temp=900 weto2 press=1.0
#
implant phosphor dose=3.0e13 energy=20 pearson
#
depo oxide thick=0.120 divisions=8
#
etch oxide dry thick=0.120
#
implant arsenic dose=5.0e15 energy=50 pearson
#
method fermi compress
diffuse time=1 temp=900 nitro press=1.0
#
# pattern s/d contact metal
etch oxide left p1.x=0.2
deposit alumin thick=0.03 divi=2
etch alumin right p1.x=0.18
# Extract design parameters
# extract final S/D Xj
extract name="nxj" xj silicon mat.occno=1 x.val=0.1 junc.occno=1
# extract the N++ regions sheet resistance
extract name="n++ sheet rho" sheet.res material="Silicon" mat.occno=1 x.val=0.05 region.occno=1
# extract the sheet rho under the spacer, of the LDD region
extract name="ldd sheet rho" sheet.res material="Silicon" \
mat.occno=1 x.val=0.3 region.occno=1
# extract the surface conc under the channel.
extract name="chan surf conc" surf.conc impurity="Net Doping" \
material="Silicon" mat.occno=1 x.val=0.45
# extract a curve of conductance versus bias.
extract start material="Polysilicon" mat.occno=1 \
bias=0.0 bias.step=0.2 bias.stop=2 x.val=0.45
extract done name="sheet cond v bias" \
curve(bias,1dn.conduct material="Silicon" mat.occno=1 region.occno=1)\
outfile="extract.dat"
# extract the long chan Vt
extract name="n1dvt" 1dvt ntype vb=0.0 qss=1e10 x.val=0.49
structure mirror right
electrode name=gate x=0.5 y=0.1
electrode name=source x=0.1
electrode name=drain x=1.1
electrode name=substrate backside
structure outfile=mos1ex01_0.str
# plot the structure
tonyplot mos1ex01_0.str -set mos1ex01_0.set
############# Vt Test : Returns Vt, Beta and Theta ################
go atlas
# set material models
models cvt srh print
contact name=gate n.poly
interface qf=3e10
method newton
solve init
# Bias the drain
solve vdrain=0.1
# Ramp the gate
log outf=mos1ex01_1.log master
solve vgate=0 vstep=0.25 vfinal=3.0 name=gate
save outf=mos1ex01_1.str
# plot results
tonyplot mos1ex01_1.log -set mos1ex01_1_log.set
# extract device parameters
extract name="nvt" (xintercept(maxslope(curve(abs(v."gate"),abs(i."drain")))) \
- abs(ave(v."drain"))/2.0)
extract name="nbeta" slope(maxslope(curve(abs(v."gate"),abs(i."drain")))) \
* (1.0/abs(ave(v."drain")))
extract name="ntheta" ((max(abs(v."drain")) * $"nbeta")/max(abs(i."drain"))) \
- (1.0 / (max(abs(v."gate")) - ($"nvt")))
quit