5SHY4045L0001实现导通状态和关断损耗之间的最佳平衡

5SHY4045L0001 IGCT基础知识：
HPT-IGCT系列始于2009年非对称4500 V装置5HY 55L4500的发布。随后添加的设备包括2010年的非对称6500 V设备5HY 42L6500，以及2012年额定电压为5500 V的另一个非对称设备5SY 50L5500。所有这些装置采用相同的封装设计，铜极片直径为85 mm（见图1）。HPT-IGCT的关键优势在于其类似晶闸管的导通状态，为设计导通状态等离子体分布提供了最大的可能性，以实现导通状态和关断损耗之间的最佳平衡。该装置还以其坚固的机械设计和与冷却器的有效热耦合而闻名。
尽管有这些优点，但与相同功率范围内的竞争对手IGBT相比，HPT-IGCT有两个显著的缺点。第一个是控制设备所需的相对较大的努力。

IGCT Basics:
The HPT-IGCT family started with the release of the asymmetric 4500 V device, 5SHY 55L4500, in 2009. Subsequent additions included the asymmetric 6500 V device, 5SHY 42L6500, in 2010, and another asymmetric device, 5SHY 50L5500, rated at 5500 V in 2012. All these devices share the same package design with a copper pole piece diameter of 85 mm (refer to Figure 1). The key strengths of the HPT-IGCT lie in its thyristor-like on-state, offering maximal possibilities for engineering the on-state plasma distribution to achieve an optimal trade-off between on-state and turn-off losses. The device is also known for its robust mechanical design and effective thermal coupling to the cooler.

Despite these advantages, the HPT-IGCT has two notable disadvantages compared to its competitor device in the same power range, the IGBT. The first is the relatively significant effort required to control the device.