【模电读书笔记】CHAPTER 2 Diode Applicatoions

Load-line analysis

load-line analysis: If the analysis is performed in a graphical manner, a line can be drawn on the characteristics of the device that represents the applied load. The intersection of the load line with the characteristics will determine the point of operation of the system. 图形化分析中,在器件特性曲线图上画一条代表负载的线,该线与特性曲线的交点可以确定工作点。


network & characteristics of diode.
in the series circuit:
E = V D + I D R I D = E R ∣ V D = 0 V V D = E ∣ I D = 0 A E=V_D+I_DR\\ I_D=\frac E R |_{V_D=0V}\\ V_D=E |_{I_D=0A} E=VD+IDRID=REVD=0VVD=EID=0A
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Q-point/ quiescent point/ Q-pt: point of operation,

Series diode configurations with DC inputs

substituing the equivalent model for the “on” diode of an ideal Si diode. V T V_T VT of an ideal Si diode usually is 0.7V.
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V D = V T V R = E − V T I D = I R = V R R V_D=V_T\\ V_R=E-V_T\\ I_D=I_R=\frac {V_R} R VD=VTVR=EVTID=IR=RVR

Sinusoidal inputs; half-wave rectification

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half-wave rectifier: use in the ac-to-dc conversion, removing one-half the input signal to establish a dc level
V d c = 0.318 V m V_{dc}=0.318V_m Vdc=0.318Vm
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PIV/PRV: peak inverse(reverse) voltage
P I V    r a t i n g ≥ V m PIV \;rating\ge V_m PIVratingVm (for half-wave rectifier), otherwise the diode will enter Zener region.

Full-wave rectification.

bridge network

Full-wave bridge rectifier
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During the period t = 0 t=0 t=0 to T 2 \frac T2 2T
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full-wave dc level output: V d c = 0.636 V m V_{dc}=0.636V_m Vdc=0.636Vm
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PIV of full-wave bridge rectifier: P I V ≥ V m PIV\ge V_m PIVVm

center-tapped transformer

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positive portionnegative portion
12

PIV of center-tapped rectifier: P I V ≥ 2 V m PIV\ge 2V_m PIV2Vm

clipper

parallel clipper

the diode is in parallel with the load
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series clipper

the diode is in series with the load
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clipper summary

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clampers

for clamping network, the total swing of the output is equal to the total swing of the input signal. 输出信号的总摆幅等于输入信号的总摆幅。.

Zener Diodes

齐纳二极管的稳压应用:

V i V_i Vi and R fixed 输入电压和负载固定

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V = V L = R L V i R + R L V=V_L=\frac {R_LV_i}{R+R_L} V=VL=R+RLRLVi

fixed V i V_i Vi, variable R L R_L RL 输入电压固定,负载可变

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R L m i n = R V z V i − V z R L m a x = V Z I L m i n R_{L_{min}}=\frac {RV_z}{V_i-V_z}\\ R_{L_{max}}=\frac {V_Z}{I_{L_{min}}} RLmin=ViVzRVzRLmax=ILminVZ

fixed R L R_L RL, variable V i V_i Vi 负载固定,输入电压可变

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V i m i n = ( R L + R ) V z R L V i m a x = I R m a x R + V z V_{i_{min}}=\frac {(R_L+R)V_z}{R_L}\\ V_{i_{max}}=I_{R_{max}}R+V_z Vimin=RL(RL+R)VzVimax=IRmaxR+Vz

VOLTAGE MULTIPLIER CIORCUITS

voltage doubler

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positive half-cycle: D1 conduct, D2 open, C1 charge to Vm
negative half-cycle: C1 discharge, D1 open D2 conduct, C2 charge to 2Vm
next positive half-cycle: C2 discharge to the load(if exist)

full-wave doubler:
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positive half-cycle: D1 on, D2 off, C1 charge to Vm
negative half-cycle: D1 off, D2 on, C2 charge to Vm

voltage tripler and quadrupler

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1st postive half-cycle: C1 charge through D1 to Vm
1st negative half-cycle: C2 charge through 2Vm through D2
2nd positive half-cycle: C3 charge to 2Vm by C2 through D3
2nd negative half-cycle: C4 charge to 2Vm by C3 through D2 D4


参考资料:
Boylestad, R.L. (1999) Boylestad and Nashelsky’s electronic devices and circuit theory. 7th edn. Toronto: Prentice Hall.

原版书籍为英文,中文注解仅供学习参考交流,不保证准确。

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