MOS SPICE models

Level 1 SPICE Models for NMOS

0.5 μm工艺经典值

LEVEL = 1	VTO = 0.7	GAMMA = 0.45	PHI = 0.9
NSUB = 9e+14	LD = 0.08e-6	UO = 350	LAMBDA = 0.1
TOX = 9e-9	PB = 0.9	CJ = 0.56e-3	CJSW = 0.35e-11
MJ = 0.45	MJSW = 0.2	CGDO = 0.4e-9	JS = 1.0e-8

Level 1 SPICE Models for PMOS

0.5 μm工艺经典值

LEVEL = 1	VTO = 0.8	GAMMA = 0.4	PHI = 0.8
NSUB = 5e+14	LD = 0.09e-6	UO = 100	LAMBDA = 0.2
TOX = 9e-9	PB = 0.9	CJ = 0.94e-3	CJSW = 0.32e-11
MJ = 0.5	MJSW = 0.3	CGDO = 0.3e-9	JS = 0.5e-8

参数解释

• LEVEL:因为是最简单的MOS SPICE model，所以【Level 1】
• VTO:threshold voltage with zero .(unit: V)。i.e. 衬底电压为0时的阈值电压
• GAMMA: body effect coefficient.(unit: ). i.e. 体效应系数，可以引起阈值电压改变.经典值在0.3~0.4V

• PHI: (unit: V).
• TOX: gate oxide thickness (unit: m)。
• NSUB: substrate doping (unit: ). i.e. 衬底掺杂

• LD: source / drain side diffusion (unit: m). i.e. 源极和漏极在工艺制作过程中造成扩散，使有效沟道长度不等于理论的沟道长度。
• UO: channel mobility (unit: ). i.e. NMOS是电子迁移率，PMOS是空穴迁移率。电子迁移率一般大于空穴迁移率，空穴迁移率大约为电子迁移率的 25%。

• LAMBDA: channel-length modulation coefficient (unit: ). i.e. 沟道长度调制效应系数，会引起源漏电流的变化，和特征电阻的变化
• CJ: source / drain bottom-plate junction capacitance per unit area (unit: )。 i.e. 中的

• CJSW: source / drain sidewall junction capacitance per unit length (unit: F/m)
• PB: source / drain junction built-in potential (unit: V)
• MJ: exponent in CJ equation (unitless)

• MJSW: exponent in CJSW equation (unitless)
• CGDO: gate-drain overlap capactiance per unit width (unit: F/M)
• CGSO: gate-source overlap capacitance per unit width (unit: F/m)
• JS: source / drain leakage current per unit area (unit: )